Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements

Adem Tataroğlu; G. Güven; S. Yılmaz; A. Büyükbaş

Research Article

Year 2014, Volume: 27 Issue: 3, 909 - 915, 04.04.2014

Adem Tataroğlu , G. Güven S. Yılmaz A. Büyükbaş

Abstract

References

E. H. Nicollian, J. R. Brews, MOS Physics and Technology, Wiley, New York, 1982).
S. M. Sze, Physics of Semiconductor Devices, 2nd Ed. Wiley, New York, 1981).
D. K. Schroder, Semiconductor Material and Device Characterization, 2nd Ed. Wiley, New York, (1998).
M. K. Hudait, S. B. Krupanidhi, Solid State Electron. 44, 1089 (2000).
A. Singh, K. C. Reinhardt, W. A. Anderson, J. Appl. Phys. 68, 3475 (1990).
A. Tataroğlu, Ş. Altındal, Vacuum 82, 1203 (2008).
O. Pakma, N. Serin, T. Serin, Ş. Altındal, J. Phys. D: Appl. Phys. 41, 215103 (2008).
S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, J. Alloys Compd. 583, 476 (2014).
H. C. Card, E. H. Rhoderick, J. Phys. D Appl. Phys. 4, 1589 (1971).
C. R. Crowell, S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
S. Kar, W. E. Dahlke, Solid State Electron. 15, 221 (1972).
S. Jeon, S. Park, Microelectron. Eng. 88, 872 (2011).
U. Kelberlau, R. Kassing, Solid State Electron. 22, 37 (1979). [14] P. Matheswaran, R. Saravanakumar, S. Velumani, Mater. Sci. Eng. B 174, 269 (2010). Sathyamoorthy, R.
S. Chand, J. Kumar, J. Appl. Phys. A 63, 171 (1996).
W. M. R. Divigalpitiya, Solar Energ. Mater. 18, 253 (1989).
J. W. Kim, J. W. Lee, Appl. Sur. Sci. 250, 247 (2005).
N. Kavasoğlu, C. Tozlu, O. Pakma, A. S. Kavasoğlu, S. Özden, B. Metin, Ö. Birgi, Ş. Oktik, Synthetic Met. 59, 1880 (2009).

Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements

Year 2014, Volume: 27 Issue: 3, 909 - 915, 04.04.2014

Adem Tataroğlu , G. Güven S. Yılmaz A. Büyükbaş

Abstract

Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency. The 1/C2-V curves are linear in the wide voltage region for each frequency. This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also, the barrier height (FB) and carrier (donor) concentration (ND) were obtained from C-2-V characteristics. The values of the ΦB and ND decrease with the increasing frequency.

Keywords

MOS capacitor, C-f and G/ω-f characteristics, Barrier height, Donor concentration

References

E. H. Nicollian, J. R. Brews, MOS Physics and Technology, Wiley, New York, 1982).
S. M. Sze, Physics of Semiconductor Devices, 2nd Ed. Wiley, New York, 1981).
D. K. Schroder, Semiconductor Material and Device Characterization, 2nd Ed. Wiley, New York, (1998).
M. K. Hudait, S. B. Krupanidhi, Solid State Electron. 44, 1089 (2000).
A. Singh, K. C. Reinhardt, W. A. Anderson, J. Appl. Phys. 68, 3475 (1990).
A. Tataroğlu, Ş. Altındal, Vacuum 82, 1203 (2008).
O. Pakma, N. Serin, T. Serin, Ş. Altındal, J. Phys. D: Appl. Phys. 41, 215103 (2008).
S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, J. Alloys Compd. 583, 476 (2014).
H. C. Card, E. H. Rhoderick, J. Phys. D Appl. Phys. 4, 1589 (1971).
C. R. Crowell, S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
S. Kar, W. E. Dahlke, Solid State Electron. 15, 221 (1972).
S. Jeon, S. Park, Microelectron. Eng. 88, 872 (2011).
U. Kelberlau, R. Kassing, Solid State Electron. 22, 37 (1979). [14] P. Matheswaran, R. Saravanakumar, S. Velumani, Mater. Sci. Eng. B 174, 269 (2010). Sathyamoorthy, R.
S. Chand, J. Kumar, J. Appl. Phys. A 63, 171 (1996).
W. M. R. Divigalpitiya, Solar Energ. Mater. 18, 253 (1989).
J. W. Kim, J. W. Lee, Appl. Sur. Sci. 250, 247 (2005).
N. Kavasoğlu, C. Tozlu, O. Pakma, A. S. Kavasoğlu, S. Özden, B. Metin, Ö. Birgi, Ş. Oktik, Synthetic Met. 59, 1880 (2009).

There are 17 citations in total.

Details

Primary Language	English
Subjects	Engineering
Journal Section	Physics
Authors	Adem Tataroğlu G. Güven This is me S. Yılmaz This is me A. Büyükbaş This is me
Publication Date	April 4, 2014
Published in Issue	Year 2014 Volume: 27 Issue: 3

Cite

APA	Tataroğlu, A., Güven, G., Yılmaz, S., Büyükbaş, A. (2014). Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science, 27(3), 909-915.
AMA	Tataroğlu A, Güven G, Yılmaz S, Büyükbaş A. Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science. August 2014;27(3):909-915.
Chicago	Tataroğlu, Adem, G. Güven, S. Yılmaz, and A. Büyükbaş. “Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-F and G/ω-F Measurements”. Gazi University Journal of Science 27, no. 3 (August 2014): 909-15.
EndNote	Tataroğlu A, Güven G, Yılmaz S, Büyükbaş A (August 1, 2014) Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science 27 3 909–915.
IEEE	A. Tataroğlu, G. Güven, S. Yılmaz, and A. Büyükbaş, “Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements”, Gazi University Journal of Science, vol. 27, no. 3, pp. 909–915, 2014.
ISNAD	Tataroğlu, Adem et al. “Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-F and G/ω-F Measurements”. Gazi University Journal of Science 27/3 (August 2014), 909-915.
JAMA	Tataroğlu A, Güven G, Yılmaz S, Büyükbaş A. Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science. 2014;27:909–915.
MLA	Tataroğlu, Adem et al. “Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-F and G/ω-F Measurements”. Gazi University Journal of Science, vol. 27, no. 3, 2014, pp. 909-15.
Vancouver	Tataroğlu A, Güven G, Yılmaz S, Büyükbaş A. Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science. 2014;27(3):909-15.