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Study of Luminescence Properties of PVA Capped Porous Silicon Carbide Microparticles Thin Films Deposited by Spin Coating Method

Yıl 2017, Cilt: 3 Sayı: 2, 15 - 19, 01.11.2017

Öz

In order
to be used in an optical device, thin films of pure Poly Vinyl Alcohol and PVA
mixed with porous SiC microparticles were prepared by spin coating technique.
The average size of SiC microparticles were 7
mm. An electroless method was used for producing
porous silicon carbide powder under UV irradiation was investigated. The
electroless process was chosen because it does not require electrical contact
during etching like in anodic one. Silver nanolayer coated SiC particles was
formed by polyol process prior the etching and served both as an anode,
catalyst and mask for the reduction of a chemical oxidant. The etchant was
composed of HF and different oxidants in water. Various porous morphologies are
presented and studied as a function of etchant concentration, oxidant type,
etching time, and wavelength of irradiation. Morphological, optical and
photoluminescence characterizations of SiC micropowder embedded in PVA matrix
and deposited as thin films on glass substrates are reported. We concluded that
the chemical etching conditions of SiC powder seems to have a large impact on
the resulting properties. We noticed that SiC powder etched under UV light of
254 nm using K2S2O8 as oxidant, at reaction
temperature of 80°C for t=40min exhibited the best photoluminescence property.

Kaynakça

  • [1] A. Keffous, A. Chriet, Y. Belkacem, A. Mansri, N. Gabouze, M. Kechouane, A. Brighet, A. Boukezzata, S. Kaci, I. Menous, G. Nezzal, L. Guerbous, H. Menari, Investigation properties of a-Si1-xCx :H films elaborated by Co-sputtering of Si and 6H-SiC, Mod. Phys. Lett. B, 24 (2010) 2101-2112. DOI:10.1142/S0217984910024262.
  • [2] S. Kaci, A. Keffous, S. Hakoum, N. Makrani, M. Kechouane, L. Guerbous, Investigation of nc-PbS/a-Si1−xCx:H/pSi(100) heterostructures for LED applications, Opt. Mater. 35 (2012) 1-4. DOI: 10.1016/j.optmat.2012.05.031.
  • [3] M. Chubarov, H. Pedersen, H. Högberg, Zs. Czigany, A. Henry, Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates, Cryst. Eng. Comm. 16 (2014) 5430-5436. DOI:10.1039/c4ce00381k.
  • [4] H. Abderrazak, E. Selmane Bel Hadj Hmida, Silicon carbide: synthesis and properties, Book edited by Rosario Gerhardt, ISBN 978-953-307-201-2, (2001). DOI:10.5772/15736.
  • [5] J. Y. Fan, X.L. Wu, P. K. Chu, Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties, Progr. Mater. Sci. 51 (2006) 983–1031. DOI:10.1016/j.pmatsci.2006.02.001
  • [6] L. T. Rittenhouse, P. W. Bohn, I. Adesida, Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching, Sol. Stat. Comm. 126 (2003) 245–250. DOI:10.1016/S0038-1098(03)00130-3
  • [7] A. Boukezzata, G. Nezzal, L. Guerbous, A. Keffous , N. Gabouze, Y. Belkacem, A. Manseri, A. Brighet, M. Kechouane, H. Menari, Comparative study of porous amorphous a-Si1−xCx films and a-Si1−xCx membranes on structural and luminescence properties, J. Lumin. 131 ( 2011) 1184–1188. DOI:10.1016/j.jlumin.2011.02.029.
  • [8] A. Keffous, N. Gabouze , A. Cheriet, Y. Belkacem, A. Boukezzata, Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications, Appl. Surf. Sci. 256 (2010) 5629–5639. DOI:10.1016/j.apsusc.2010.03.029.
  • [9] T. Hossain, F. Khan, I. Adesida, P. Bohn, and T. RittenhouseNanoporous Silicon Carbide For Nanoelectromechanical Systems Applications, NASA/CR-2003-212198. http://gltrs.grc.nasa.gov.
  • [10] A. Boukezzata, A. Keffous , A. Cheriet, Y. Belkacem, N. Gabouze, A. Manseri, G. Nezzal, M. Kechouane, A. Bright, L. Guerbous, H. Menari, Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching, Appl. Surf. Sci. 256 (2010) 5592-5595. DOI:10.1016/j.apsusc.2010.03.037.
  • [11] N. B. Khosroshahi, R. A. Khosroshahi, R. T. Mousavian, D. Brabazon, Effect of electroless coating parameters and ceramic particle size on fabrication of a uniform Ni–P coating on SiC particles, Ceram. Int.40 (2014) 12149-12159. DOI:10.1016/j.ceramint.2014.04.055.
Yıl 2017, Cilt: 3 Sayı: 2, 15 - 19, 01.11.2017

Öz

Kaynakça

  • [1] A. Keffous, A. Chriet, Y. Belkacem, A. Mansri, N. Gabouze, M. Kechouane, A. Brighet, A. Boukezzata, S. Kaci, I. Menous, G. Nezzal, L. Guerbous, H. Menari, Investigation properties of a-Si1-xCx :H films elaborated by Co-sputtering of Si and 6H-SiC, Mod. Phys. Lett. B, 24 (2010) 2101-2112. DOI:10.1142/S0217984910024262.
  • [2] S. Kaci, A. Keffous, S. Hakoum, N. Makrani, M. Kechouane, L. Guerbous, Investigation of nc-PbS/a-Si1−xCx:H/pSi(100) heterostructures for LED applications, Opt. Mater. 35 (2012) 1-4. DOI: 10.1016/j.optmat.2012.05.031.
  • [3] M. Chubarov, H. Pedersen, H. Högberg, Zs. Czigany, A. Henry, Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates, Cryst. Eng. Comm. 16 (2014) 5430-5436. DOI:10.1039/c4ce00381k.
  • [4] H. Abderrazak, E. Selmane Bel Hadj Hmida, Silicon carbide: synthesis and properties, Book edited by Rosario Gerhardt, ISBN 978-953-307-201-2, (2001). DOI:10.5772/15736.
  • [5] J. Y. Fan, X.L. Wu, P. K. Chu, Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties, Progr. Mater. Sci. 51 (2006) 983–1031. DOI:10.1016/j.pmatsci.2006.02.001
  • [6] L. T. Rittenhouse, P. W. Bohn, I. Adesida, Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching, Sol. Stat. Comm. 126 (2003) 245–250. DOI:10.1016/S0038-1098(03)00130-3
  • [7] A. Boukezzata, G. Nezzal, L. Guerbous, A. Keffous , N. Gabouze, Y. Belkacem, A. Manseri, A. Brighet, M. Kechouane, H. Menari, Comparative study of porous amorphous a-Si1−xCx films and a-Si1−xCx membranes on structural and luminescence properties, J. Lumin. 131 ( 2011) 1184–1188. DOI:10.1016/j.jlumin.2011.02.029.
  • [8] A. Keffous, N. Gabouze , A. Cheriet, Y. Belkacem, A. Boukezzata, Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications, Appl. Surf. Sci. 256 (2010) 5629–5639. DOI:10.1016/j.apsusc.2010.03.029.
  • [9] T. Hossain, F. Khan, I. Adesida, P. Bohn, and T. RittenhouseNanoporous Silicon Carbide For Nanoelectromechanical Systems Applications, NASA/CR-2003-212198. http://gltrs.grc.nasa.gov.
  • [10] A. Boukezzata, A. Keffous , A. Cheriet, Y. Belkacem, N. Gabouze, A. Manseri, G. Nezzal, M. Kechouane, A. Bright, L. Guerbous, H. Menari, Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching, Appl. Surf. Sci. 256 (2010) 5592-5595. DOI:10.1016/j.apsusc.2010.03.037.
  • [11] N. B. Khosroshahi, R. A. Khosroshahi, R. T. Mousavian, D. Brabazon, Effect of electroless coating parameters and ceramic particle size on fabrication of a uniform Ni–P coating on SiC particles, Ceram. Int.40 (2014) 12149-12159. DOI:10.1016/j.ceramint.2014.04.055.
Toplam 11 adet kaynakça vardır.

Ayrıntılar

Bölüm ICCESEN-2016
Yazarlar

Samira Kacı Bu kişi benim

Yayımlanma Tarihi 1 Kasım 2017
Gönderilme Tarihi 25 Ekim 2017
Kabul Tarihi 28 Ekim 2017
Yayımlandığı Sayı Yıl 2017 Cilt: 3 Sayı: 2

Kaynak Göster

APA Kacı, S. (2017). Study of Luminescence Properties of PVA Capped Porous Silicon Carbide Microparticles Thin Films Deposited by Spin Coating Method. International Journal of Computational and Experimental Science and Engineering, 3(2), 15-19.