Analytical study of the minority carrier distribution and photocurrent of a Schottky-barrier silicon solar cell

Yıl 2014, Cilt: 4 Sayı: 2, 504 - 507, 01.06.2014

Avigyan Chatterjee Ashim Kumar Biswas Amitabha Sinha

https://izlik.org/JA48WU33PP

Öz

ABSTRACT: Schottky-barrier solar cells have been studied previously by various research workers. In this paper, the excess minority carrier distribution and the photocurrent of Schottky-barrier solar cell have been studied analytically and their dependence of doping concentration and back surface recombination velocity has been reported. An attempt has been made to give an interpretation of the results obtained from theoretical considerations.

Anahtar Kelimeler

Schottky-barrier , solar cells , spectral response

Kaynakça

• D.M. Chapin, C.S. Fuller, G.L. Pearson,“A new silicon p - n junction photocell for converting solar radiation into electrical power”, J. Appl. Phys.vol. 25, pp. 676-677, May B. Dale, P. Smith, “Spectral response of solar cells”, J. Appl. Phys. vol. 32, pp.1377-1381, July 1961.
• J.G. Fossum, E.L. Burgess, “High efficiency p+ - n – n+ back surface-field silicon solar cells” ,Appl. Phys. Lett. , vol. 33(3), pp.238-240, August 1978.
• A.W. Blakers, M.A. Green, “20% efficiency silicon solar cells”, Appl. Phys. Lett. 48, pp. 215-217, Jan 1986.
• V. Perraki, “Modeling of recombination velocity and doping influence in epitaxial silicon solar cells”, Solar Energy Materials & Solar Cells, vol.94, pp.1597-160 3, June 2010.
• D.L. Pulfrey and R.F. McOuat, “Schottky barrier solar cell calculations”, Appl. Phys. Lett.vol. 24, pp. 167-169, Feb R.F.McOuat and D.L. Pulfrey, “ A model for Schottky - barrier solar cell analysis”, J. Appl. Phys.vol. 47, pp. 2113- , May 1976.
• L.C. Munoz and C. Ferrarons, “Drift field Schottky-barrier solar cell calculations”, Appl. Phys. Lett. vol. 30, pp. 172- , Feb 1977.
• P.K. Dubey and V.V. Paranjape, “Open circuit voltage of a Schottky-barrier solar cell”, J. Appl. Phys. vol. 48, pp. 328, Jan 1977.
• S.M. Vemon and W.A. Anderson, “Temperature effects in Schottky-barrier silicon solar cells”, Appl. Phys. Lett. vol.26, pp. 707-709, June 1975.
• B. Bhaumik and R. Sharan, “Temperature effects in Schottky-barrier solar cell”, Appl. Phys. Lett. vol.29, pp. 259, August 1976.
• E.H. Rhoderick, “Metal semiconductor contacts”, IEE Proc. vol.129, pp. 1-14, Feb 1982.
• K.T. Butler and J.H. Harding, “Atomistic simulatio n of doping effects on growth andcharge transport in Si/Ag interfaces in high-performance solar cells”, Physical Review B. vol. 86, 245319-1 to 7, Dec 2012.
• E.W. McFarland & J. Tang, “A photovoltaic device structure based on internal electron emission”, Letters to Nature, vol. pp. 421 ,616-618 , Feb 2003.
• H.J. Hovel, Semiconductors and Semimetals, vol. 11. Solar Cells,Academic Press, New York, 1975, pp. 112
• S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, John Wiley & Sons, 2007,pp.137.
• J. Singh, Semiconductor Devices, McGraw Hill, New York, 1993, pp. 254-268.
• E. Fred Schubert, Light Emitting Diodes, 2nd edition; Cambridge University Press, 2003, pp.115, 307.
• J.G. Fossum, “Computer aided numerical analysis of silicon solar cells, Solid St. Electronics”. vol. 19, pp.269- , April 1976.
• D.M. Caughey and R.E. Thomas, “Carrier mobilities in silicon empirically related to doping and field”, Proc. IEEE.vol. 55, pp. 2192-2193, Dec 1967.