Analytical Modeling of the Base Dark Saturation Current of Drift-Field Solar Cells Considering Auger Recombination

Öz

In this work, an analytical model has been developed for the dark saturation current in the heavily-doped base region of a drift-field Si-solar cell. Unlike the conventional models available in the literature, this model incorporates both the SRH (Shockley-Read-Hall) and the Auger recombination. The mathematical intractability due to this consideration has been resolved by using an elegant exponential approximation technique. The simulations carried out by the developed model shows that the Auger recombination becomes significant even for a 1 µm wide base when surface recombination velocity is lowered to the order of  10^4 cm/sec  and/or when the doping level is of the order of 10^19 cm-3 .

Anahtar Kelimeler

• - Drift-Field Solar Cell, Dark Saturation Current, SRH Recombination, Auger Recombination, Non-uniformly Doped Base

Kaynakça

1. M. Wolf, "Drift fields in photovoltaic solar energy converter cells", Proc. of the IEEE,vol. 51, no. 5, pp. 674-693, May 1963.
2. W. M. Bullis, "Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices", IEEE Trans. Electron Devices, vol. 14, no. 2, pp. 75-81, February 1967.
3. S. Kaye and G. P. Rolik, "Optimum bulk drift-field thicknesses in solar cells", IEEE Trans. Electron Devices, vol. 13, no. 7, pp. 563-570, July 1966.
4. R. V. Overstraeten and W. Nuyts, "Theoretical investigation of the efficiency of drift-field solar cells", IEEE Trans. Electron Devices, vol. 16, no. 7, pp. 632- 641, July1969.
5. F. A. Lindholm and Y. H. Chen, "Current-voltage characteristic for bipolar p-n junction devices with drift fields, including correlation between carrier lifetimes and shallow-impurity concentration", J. App. Phys., vol. 53, no. 12, pp. 8863-8866, December 1982.
6. Leendert A. Verhoff and Wim C. Sinke, "Minority- carrier transport in nonuniformly doped silicon-an analytical approach", IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 210-221, January 1990.
7. R. Burgers, "New Analytical Expression for Dark Current Calculation of highly doped region in semiconductor", IEEE Trans. Electron Devices, Jan. 1997, vol. 44, no. 1, pp. 171-179, January 1997.
8. R. J. van Overstraeten, H. J. Deman and R. P. Mertens, "Transport equations in heavy doped silicon", IEEE Trans. Electron Devices, vol. ED-20, no. 3, pp. 290-298, March 1973.

9. D. B. M. Klaassen, J. W. Slotboom and H. C. de Graaff, "Unified apparent bandgap narrowing in n- and p-type Silicon", Solid-State Electron, vol. 35, no. 2, pp. 125- 129, February 1992.
10. J. G. Fossum and D. S. Lee, "A physical model for the dependence of carrier lifetime on doping density in nondegenrate silicon", Solid-State Electron, vol. 25, no. 8, pp. 741-747, October 1982.
11. J. G. Fossum, "Computer-aided numerical analysis of silicon solar cells", Solid-State Electron., vol. 19, no. 4, pp. 269-277, April 1976.
12. J. Dziewior and W. Schmid, "Auger coefficient for highly doped and highly excited silicon", Appl. Phys. Lett., vol. 31, no. 5, pp. 346-348, May 1977.
13. C. Hu and R. M. White, Solar Cells, McGraw-Hill Inc., New York, Figure 3.17,1983, pp. 61.
14. Guoxin Li, Arnost Neugroschel, C. T. Sah, Don Hemmenway, Tony Rivoli and Jay Maddux, "Analysis of bipolar junction transistors with a Gaussian base- dopant impurity-concentration profile", IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2945-2947, December 2001.