BibTex RIS Kaynak Göster
Yıl 2006, Cilt: 6 Sayı: 2, 251 - 255, 02.01.2012

Öz

Kaynakça

  • J. M. Olson, T. A. Gessert, and M. M. Al- Jasim, Proceedings 18th IEEE Photovoltaic Specialists Conference, 552, Las Vegas, Oct. 21– , 1985 ~IEEE, New York, 1985.
  • K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, Appl. Phys. Lett. 65, 989, 1994.
  • M. Yamaguchi, “Free electron concentration and mobility of InN and In0.68Ga0.32N as a function of displacement damage dose measured by the Hall Effect,” FIG. 6. Sol. Energy Mater. Sol. Cells 75, 261 2003.
  • C. H. Henry, “Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells,” Journal of applied physics, 51(8) 4494- , August 1980.
  • Hasna Hamzaoui, Ahmed S. Bouazzi, Bahri Rezig, “Theoretical possibilities of InxGa1-xN tandem PV structures,” Solar Energy Materials & Solar Cells, vol. 87 pp. 595-603 Dec. 2005.
  • F.Bechstedt, J. Furthmueller, M. Ferhat, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, V.Yu. Davydov, O. Ambacher, R. Goldhahn, “Energy gap and optical properties of InxGa1-XN,” Phys. Status. Solid. (a) 195 (3) 628-633, 2003.
  • S. M. Sze, Physics of Semiconductor Device, Bell Laboratories, Incorporated Murray Hill, New Jersey, 1981.
  • X. Guo, E.F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90 (8) 4191-4195,
  • R. Hickman, J.M. Van Hove, P.P. Chow, J.J. Klaassen, A.M. Wowchack, C.J. Polley, D.J. King, F. Ren, C.R. Abernathy, S.J. Pearton, K.B. Jung, H. Cho, J.R. La Roche, “GaN PN junction issues and developments, ”Http://www.mse.ulf.edu/~spear/recent_papers/p n_junction/pn_junction.pdf, 01/04/2003
  • M. Hori, K.Kano, T. Yamaguchi, Y. Satto, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki, “Optical Properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE,” Phys. stat. sol. (b) 234, No. , 750-754, October, 2002.
  • M. E. Levinshtein et. al. Properties of advanced semiconductor materials, A wiley- interscience Publication, John wiley & sons, Inc, http://rredc.nrel.gov/solar/spectra/am1.5/ on /05/06 O. Ambacher et. al. “Pyroelectric properties of Al (In) GaN/GaN hetero and quantum well structure” J. Phys. Condens Matter 14, 3399- , 2002.
  • M. Yamaguichi et al., “Japanese activities of R&Don III-V concentrator solar cells and modules”, proc. 19th EU-PVSEC, 2004

PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS

Yıl 2006, Cilt: 6 Sayı: 2, 251 - 255, 02.01.2012

Öz

PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS

Kaynakça

  • J. M. Olson, T. A. Gessert, and M. M. Al- Jasim, Proceedings 18th IEEE Photovoltaic Specialists Conference, 552, Las Vegas, Oct. 21– , 1985 ~IEEE, New York, 1985.
  • K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, Appl. Phys. Lett. 65, 989, 1994.
  • M. Yamaguchi, “Free electron concentration and mobility of InN and In0.68Ga0.32N as a function of displacement damage dose measured by the Hall Effect,” FIG. 6. Sol. Energy Mater. Sol. Cells 75, 261 2003.
  • C. H. Henry, “Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells,” Journal of applied physics, 51(8) 4494- , August 1980.
  • Hasna Hamzaoui, Ahmed S. Bouazzi, Bahri Rezig, “Theoretical possibilities of InxGa1-xN tandem PV structures,” Solar Energy Materials & Solar Cells, vol. 87 pp. 595-603 Dec. 2005.
  • F.Bechstedt, J. Furthmueller, M. Ferhat, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, V.Yu. Davydov, O. Ambacher, R. Goldhahn, “Energy gap and optical properties of InxGa1-XN,” Phys. Status. Solid. (a) 195 (3) 628-633, 2003.
  • S. M. Sze, Physics of Semiconductor Device, Bell Laboratories, Incorporated Murray Hill, New Jersey, 1981.
  • X. Guo, E.F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90 (8) 4191-4195,
  • R. Hickman, J.M. Van Hove, P.P. Chow, J.J. Klaassen, A.M. Wowchack, C.J. Polley, D.J. King, F. Ren, C.R. Abernathy, S.J. Pearton, K.B. Jung, H. Cho, J.R. La Roche, “GaN PN junction issues and developments, ”Http://www.mse.ulf.edu/~spear/recent_papers/p n_junction/pn_junction.pdf, 01/04/2003
  • M. Hori, K.Kano, T. Yamaguchi, Y. Satto, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki, “Optical Properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE,” Phys. stat. sol. (b) 234, No. , 750-754, October, 2002.
  • M. E. Levinshtein et. al. Properties of advanced semiconductor materials, A wiley- interscience Publication, John wiley & sons, Inc, http://rredc.nrel.gov/solar/spectra/am1.5/ on /05/06 O. Ambacher et. al. “Pyroelectric properties of Al (In) GaN/GaN hetero and quantum well structure” J. Phys. Condens Matter 14, 3399- , 2002.
  • M. Yamaguichi et al., “Japanese activities of R&Don III-V concentrator solar cells and modules”, proc. 19th EU-PVSEC, 2004
Toplam 12 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Makaleler
Yazarlar

Md. Rafiqul Islam Bu kişi benim

A. N. M. Enamul Kabır Bu kişi benim

Ashraful G. Bhuıyan Bu kişi benim

Yayımlanma Tarihi 2 Ocak 2012
Yayımlandığı Sayı Yıl 2006 Cilt: 6 Sayı: 2

Kaynak Göster

APA Islam, M. R., Kabır, A. N. M. E., & Bhuıyan, A. G. (2012). PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS. IU-Journal of Electrical & Electronics Engineering, 6(2), 251-255.
AMA Islam MR, Kabır ANME, Bhuıyan AG. PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS. IU-Journal of Electrical & Electronics Engineering. Ocak 2012;6(2):251-255.
Chicago Islam, Md. Rafiqul, A. N. M. Enamul Kabır, ve Ashraful G. Bhuıyan. “PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS”. IU-Journal of Electrical & Electronics Engineering 6, sy. 2 (Ocak 2012): 251-55.
EndNote Islam MR, Kabır ANME, Bhuıyan AG (01 Ocak 2012) PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS. IU-Journal of Electrical & Electronics Engineering 6 2 251–255.
IEEE M. R. Islam, A. N. M. E. Kabır, ve A. G. Bhuıyan, “PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS”, IU-Journal of Electrical & Electronics Engineering, c. 6, sy. 2, ss. 251–255, 2012.
ISNAD Islam, Md. Rafiqul vd. “PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS”. IU-Journal of Electrical & Electronics Engineering 6/2 (Ocak 2012), 251-255.
JAMA Islam MR, Kabır ANME, Bhuıyan AG. PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS. IU-Journal of Electrical & Electronics Engineering. 2012;6:251–255.
MLA Islam, Md. Rafiqul vd. “PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS”. IU-Journal of Electrical & Electronics Engineering, c. 6, sy. 2, 2012, ss. 251-5.
Vancouver Islam MR, Kabır ANME, Bhuıyan AG. PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS. IU-Journal of Electrical & Electronics Engineering. 2012;6(2):251-5.