BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLEN XIIIn2Se4 ÜÇLÜ YARIİLETKENLERİN YAPISAL KARAKTERİZASYONU

Öz

Nano ve optoelektronik teknolojinin ilerlemesinde yarıiletkenlerin alanı önemi giderek artmaktadır. Ancak, kullanılacak yarıiletkenlerin hem kolay elde edilebilir hem de uygulama alanının geniş olması daha da önem arz etmektedir. Bu maksatla, uygulama alanlarının çok olduğu ve karakteristiklerinin tam olarak belirlendiği yarıiletkenlere ihtiyaç duyulmaktadır. Elde edilen bütün sonuçlar analiz edilerek nano ve optoelektronik teknolojisi için önemli olan bu kristallerden FeIn2Se4 yapısal karakteristikleri detaylı olarak araştırılacaktır. XIIIn2Se4 (XII =Mn, Fe vb.) üçlü yarıiletken bileşikleri, bölümümüz kristal büyütme laboratuvarında, Bridgman-Stockbarger metodu ile büyütülmüştür. Numunelerin, yapısal ve morfolojik karakterizasyonları X-Işını Kırınımı (XRD), Taramalı Elektron Mikroskobu (SEM) ve Enerji Ayrımlı X-ışını (EDX) spektroskopisi teknikleri kullanılarak gerçekleştirilmiştir. X-Işını Kırınımı bulguları incelendiğinde FeIn2Se4 yarıiletkenlerin hegzagonal yapıya sahip olduğu bulunmuştur. FeIn2Se4 yarıiletkeninin Raman spektrumu alınmış, yedi tipik titreşim tepesi bulunmuştur.

Anahtar Kelimeler

• XIIIn2Se4
• Bridgman/Stockbarger Tekniği
• XRD
• SEM
• EDX
• Raman spektroskopisi

STRUCTURAL CHARACTERIZATION XIIIn2Se4 TERNARY SEMICONDUCTORS GROWN WITH BRIDGMAN/STOCKBARGER TECHNIQUE

Abstract

The importance of semiconductors paving the way for nano and optoelectronic technology has recently been increasing. But, producing them easily and having their vast application fields are most important. For that reason, the crystals having wide application field and their characteristics which are determinated are needed. The structural characteristics of these FeIn2Se4 crystals which are important fort the nano and optoelectronic technology were explored in detail by analysing the all obtained results. XIIIn2Se4 (XII=Mn, Fe, Ni, vb.) ternary semiconductor compounds grown in our crystal growth laboratory by the Bridgman-Stockbarger method. The structural and morphological characterizations of the sample will be applied X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy-dispersive X-ray spectroscopy (EDX) technique. When X-ray diffraction findings had examined, it was found that TlGaS2 semiconductor had hexagonal structure. The Raman spectrum of TlGaS2 semiconductor was taken, seven typical vibration peaks were found.

Keywords

• XIIIn2Se4
• Bridgman/Stockbarger Technique
• XRD
• SEM
• EDX
• Raman spectrum

Kaynakça

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