Structural Characterisation of Grown InSe:Mn Semiconductors and Effect of Doped Manganese

Öz

Scientific studies on binary semiconductors have been going on for half a century. The growth and research of semiconductors have contributed greatly to the advancement of semiconductor technology. Indium and selenium were synthesised from elements in stoichiometric ratios and doped with manganese. InSe and InSe:Mn single crystals were successfully grown by Bridgman/Stockbarger crystal growth method. Since the surfaces of the grown samples do not contain contamination, chemical contamination was not caused by chemical treatment. Since the grown semiconductors have a layered structure, the samples were easily prepared for characteristic analyses along the (001) planes. The structure of the InSe and InSe:Mn semiconductors was analysed using x-ray diffractometer, scanning electron microscopy and energy dispersive X-ray techniques. An important study has been conducted on the structural properties of InSe and InSe:Mn semiconductors grown with the modified Bridgman/Stockbarger technique. The hexagonal structure of the InSe semiconductor with lattice parameters a = b = 4,025 Å and c = 16,732 Å was confirmed with the help of X-ray diffraction. III-VI semiconductors are used in visible and infrared light emitting diodes, infrared detectors, converters, amplifiers, optical parameter oscillators and far infrared generators.

Anahtar Kelimeler

• Crystal Growth
• InSe
• InSe:Mn
• Bridgman/Stockbarger Method

Büyütülen InSe:Mn Yarıiletkenlerin Yapısal Karakterizasyonu ve Katkılınan Manganezin Etkisi

Öz

İkili yarıiletkenler üzerine yapılan bilimsel çalışmalar yarım asırdır devam etmektedir. Yarıiletkenlerin, büyütülmesi ve araştırılması yarıiletken teknolojisinin ilerlemesine büyük katkı sağlamıştır. İndiyum ve selenyum elementlerden stokiyometrik oranlarda sentezlenmiş ve manganez katkılanmıştır. InSe ve InSe:Mn tek kristalleri, Bridgman/Stockbarger kristal büyütme yöntemiyle başarıyla büyütülmüştür. Büyütülen numunelerin yüzeyleri kontaminasyon içermediğinden kimyasal işleme tabi tutulmayarak kimyasal kirlenmeye sebep olunmamıştır. Büyütülen yarıiletkenler tabakalı bir yapıya sahip olduğundan, numuneler kolayca (001) düzlemleri boyunca karakteristik analizler için hazırlanmıştır. InSe ve InSe:Mn yarı iletkenlerinin yapısı X-ışını difraktometresi, taramalı elektron mikroskobu ve enerji dağılımlı x-ışını teknikleri kullanılarak analiz edilmiştir.

Anahtar Kelimeler

• Kristal Büyütme
• InSe
• InSe:Mn
• Bridgman/Stockbarger Yöntemi

Kaynakça

1. Boledzyuk, V. B., Kovalyuk, Z. D., Kudrynskyi, Z. R., Litvin, O. S., & Shevchenko, A. D. (2014). Structure and magnetic properties of cobalt-intercalated layered InSe crystals. Technical Physics, 59(10), 1462–1465. https://doi.org/10.1134/s1063784214100107
2. Camassel, J., Merle, P., Mathieu, H., & Chevy, A. (1978). Excitonic absorption edge of indium selenide. Physical Review. B, Condensed Matter, 17(12), 4718–4725. https://doi.org/10.1103/physrevb.17.4718
3. Chevy, A., Kuhn, A., & Martin, M. (1977). Large InSe monocrystals grown from a non-stoichiometric melt. Journal of Crystal Growth, 38(1), 118–122. https://doi.org/10.1016/0022-0248(77)90381-5
4. Cullity, B.D. (1972). Elements of X-Ray Diffraction, Addison-Wesley, Reading, MA, p.102. De Blasi, C., Micocci, G., Mongelli, S., & Tepore, A. (1982). Large InSe single crystals grown from stoichiometric and non-stoichiometric melts. Journal of Crystal Growth, 57(3), 482–486. https://doi.org/10.1016/0022-0248(82)90062-8
5. El-Moiz, A. A., Hefni, M., Reicha, F., & Hafiz, M. (1993). Optical investigations on InxSe1−x thin films (II). Physica B Condensed Matter, 191(3–4), 303–311. https://doi.org/10.1016/0921-4526(93)90089-o
6. El-Sayed, S. (2003). Optical investigations of the indium selenide glasses. Vacuum, 72(2), 169–175. https://doi.org/10.1016/s0042-207x(03)00139-8
7. Emir, C., Tataroglu, A., Coşkun, E., & Ocak, S. B. (2024). Structural and Optical Properties of Interfacial InSe Thin Film. ACS Omega. https://doi.org/10.1021/acsomega.3c06600
8. Errandonea, D., Segura, A., Muñoz, V., & Chevy, A. (1999). Effects of pressure and temperature on the dielectric constant of GaS, GaSe, and InSe: Role of the electronic contribution. Physical Review. B, Condensed Matter, 60(23), 15866–15874. https://doi.org/10.1103/physrevb.60.15866

9. Ertap, H., & Karabulut, M. (2018). Structural and electrical properties of boron doped InSe single crystals. Materials Research Express, 6(3), 035901. https://doi.org/10.1088/2053-1591/aaf2f6
10. Gürbulak, B. (1997). İkili ve Üçlü Tek Kristallerin Büyütülmesi Soğurma ve Elektriksel Özelliklerinin İncelenmesi, Doktora Tezi, Atatürk Üniversitesi Fen Bil. Enst. Erzurum, 1997
11. Gürbulak, B. (2004). Urbach Tail and Optical Investigations of Gd Doped and Undoped InSe Single Crystals. Physica Scripta, 70(2–3), 197–201. https://doi.org/10.1088/0031-8949/70/2-3/020
12. Gürbulak, B. (2024). Theoretical Structural Characterization of XIn2Se4 Ternary Semiconductors Wanted to be Grow Using the Bridgman/Stockbarger Technique. DergiPark (Atatürk University). https://doi.org/10.5281/zenodo.12193900
13. Ikari, T., Shigetomi, S., Koga, Y., & Shigetomi, S. (1981). Photoluminescence of Zn Doped InSe Single Crystals. Physica Status Solidi (B), 103(1). https://doi.org/10.1002/pssb.2221030167
14. Imai, K., Suzuki, K., Haga, T., Hasegawa, Y., & Abe, Y. (1981). Phase diagram of In-Se system and crystal growth of indium monoselenide. Journal of Crystal Growth, 54(3), 501–506. https://doi.org/10.1016/0022-0248(81)90505-4
15. Julien, C., Benramdane, N., & Guesdon, J. P. (1990). Transformation steps of structure in flash-deposited films of a-InSe. Semiconductor Science and Technology, 5(8), 905–910. https://doi.org/10.1088/0268-1242/5/8/018
16. Kaminskii, V. M. (2009). Structure and electrical properties of In2Se3 layered crystals. Semiconductor Physics Quantum Electronics & Optoelectronics, 12(3), 290–293. https://doi.org/10.15407/spqeo12.03.290
17. Kovalyuk, Z. D., Kushnir, O. I., & Mintyanskii, I. V. (2009). Electrical properties of magnesium-intercalated InSe. Inorganic Materials, 45(8), 846–850. https://doi.org/10.1134/s0020168509080032
18. Lang, O., Klein, A., Pettenkofer, C., Jaegermann, W., & Chevy, A. (1996). Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles. Journal of Applied Physics, 80(7), 3817–3821. https://doi.org/10.1063/1.363335
19. Lashkarev, G., Slynko, V., Kovalyuk, Z., Sichkovskyi, V., Radchenko, M., Aleshkevych, P., Szymczak, R., Dobrowolski, W., Minikaev, R., & Zaslonkin, A. (2006). Anomalies of magnetic properties of layered crystals InSe containing Mn. Materials Science and Engineering C, 27(5–8), 1052–1055. https://doi.org/10.1016/j.msec.2006.07.028
20. Man, L.I., Imamov, R.M. & Semiletov, S. A. (1979). Kristallografia, 21(3), 628.
21. Park, J., Afzaal, M., Helliwell, M., Malik, M. A., O’Brien, P., & Raftery, J. (2003). Chemical Vapor Deposition of Indium Selenide and Gallium Selenide Thin Films from Mixed Alkyl/Dialkylselenophosphorylamides. Chemistry of Materials, 15(22), 4205–4210. https://doi.org/10.1021/cm0310420
22. Pellicer-Porres, J., Ferrer-Roca, C., Segura, A., Jacquamet, L., & Chevy, A. (2002). Investigation of the local structure of As-related acceptor centres in InSe by means of fluorescence-detected XAS. Semiconductor Science and Technology, 17(9), 1023–1027. https://doi.org/10.1088/0268-1242/17/9/321
23. Sang, D. K., Wang, H., Qiu, M., Cao, R., Guo, Z., Zhao, J., Li, Y., Xiao, Q., Fan, D., & Zhang, H. (2019). Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties. Nanomaterials, 9(1), 82. https://doi.org/10.3390/nano9010082
24. Shih, I., Champness, C., & Shahidi, A. V. (1986). Growth by directional freezing of CuInSe2 and diffused homojunctions in bulk material. Solar Cells, 16, 27–41. https://doi.org/10.1016/0379-6787(86)90073-6
25. Slyn’ko, V. V., Khandozhko, A. G., Kovalyuk, Z. D., Slyn’ko, V. E., Zaslonkin, A. V., Arciszewska, M., & Dobrowolski, W. (2005a). Ferromagnetic states in theIn1−xMnxSelayered crystal. Physical Review B, 71(24). https://doi.org/10.1103/physrevb.71.245301
26. Slyn’ko, V. V., Khandozhko, A. G., Kovalyuk, Z. D., Zaslonkin, A. V., Slyn’ko, V. E., Arciszewska, M., & Dobrowolski, W. D. (2005b). Weak ferromagnetism in InSe:Mn layered crystals. Semiconductors, 39(7), 772–776. https://doi.org/10.1134/1.1992631
27. Suhre, D. R., Singh, N. B., Balakrishna, V., Fernelius, N. C., & Hopkins, F. K. (1997). Improved crystal quality and harmonic generation in GaSe doped with indium. Optics letters, 22(11), 775-777. https://doi.org/10.1364/OL.22.000775
28. Viswanathan, C., Senthilkumar, V., Sriranjini, R., Mangalaraj, D., Narayandass, S. K., & Yi, J. (2005). Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films. Crystal Research and Technology, 40(7), 658–664. https://doi.org/10.1002/crat.200410404
29. Watanabe, K., Uchida, K., & Miura, N. (2003). Magneto-optical effects observed for GaSe in megagauss magnetic fields. Physical Review. B, Condensed Matter, 68(15). https://doi.org/10.1103/physrevb.68.155312
30. Williamson, G. K., & Smallman, R. E. (1956). III. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum. Philosophical Magazine, 1(1), 34–46. https://doi.org/10.1080/14786435608238074
31. Zaslonkin, A. V., Kaminskii, V. M., Kovalyuk, Z. D., Mintyanskii, I. V., & Tovarnitskii, M. V. (2006). Electrical properties of hydrogenated InSe crystals. Inorganic Materials, 42(12), 1308–1310. https://doi.org/10.1134/s0020168506120053