Electrical Characterization of Zn Based Al/Bi-ZnO/p-Si (MIS) Structures

Yıl 2025, Cilt: 11 Sayı: 2, 267 - 282, 31.12.2025

Özkan Göçgeldi , Mümin Mehmet Koç , Çiğdem Ş. Güçlü , Burhan Coşkun

Öz

Thin films are a fundamental part of the electronic devices, where multilayered thin films for multilayered structures were often used to devices in various forms. Among them, metal-insulator-semiconductor (MIS) structures are one of the most favourable structures which were used in various applications, solar harvesting devices, photodetectors, and logic circuits. In this work, Zn based thin-films were doped with Bi (0.5 % ratio) using hydrothermal synthesis and Al/Bi-ZnO/p-Si structures were produced. Various electrical properties such as capacitance – voltage (C–V), conductance – voltage (G/ω-V), and series resistance – voltage (Rs–V) were assessed. In the electrical investigation, influence of voltage signal on electrical properties were assessed. Possible factors affecting the electrical properties, such as interface/surface states (Nss) and charge/current transfer mechanism (CTM) were evaluated. Fundamental physical parameters of the sample were also calculated from the interception and slope of 1/C2 vs V plot. The alteration of capacitance under illumination was investigated where light intensity related conductance – voltage characteristics were observed. All experimental results are indicated that the fabricated Al/p-Si/Au structures with (Bi-ZnO) can be used instead of the conventional traditional insulators grown by some traditional-methods.

Anahtar Kelimeler

Bi-doped ZnO thin film , Al/(BiZnO)/p-Si/Au (MIS) Schottky structures , Capacitance and conductance measurements

Etik Beyan

There is no conflict of interest among the authors.

Destekleyen Kurum

Kırklareli University Scientific Research and Coordination office

Proje Numarası

KLUBAP 273

Teşekkür

Part of this research was conducted using the facilities of Kırklareli University Advanced Technologies Application and Research Center (ITUAM).

Zn Temelli Al/Bi-ZnO/p-Si (MIS) Yapıların Elektriksel Karakterizasyonu

Öz

İnce filmler, elektronik aygıtların temel bileşenlerinden biridir ve çok katmanlı yapılar için ince filmler, farklı form ve işlevlerdeki aygıtlarda sıklıkla kullanılmaktadır. Bu yapılar arasında, metal-yalıtkan-yarıiletken (MIS) yapılar, güneş enerjisi dönüşüm aygıtları, fotodedektörler ve mantık devreleri gibi çeşitli uygulamalarda yaygın olarak tercih edilen yapılardan biridir. Bu çalışmada, Zn temelli ince filmler hidrotermal sentez yöntemiyle %0,5 oranında Bi ile katkılanmış ve Al/Bi-ZnO/p-Si yapıları üretilmiştir. Bu yapılara ait çeşitli elektriksel özellikler; kapasitans-gerilim (C-V), iletkenlik-gerilim (G/ω-V) ve seri direnç-gerilim (Rs-V) ölçümleri ile incelenmiştir. Elektriksel incelemelerde, uygulanan gerilim sinyalinin bu özellikler üzerindeki etkisi değerlendirilmiştir. Elektriksel karakteristikleri etkileyebilecek olası faktörler, arayüzey durumları (Nss) ve yük/akım taşıma mekanizması (CTM) gibi etkenler dikkate alınarak analiz edilmiştir. Ayrıca, 1/C²–V grafiğinin kesim noktası ve eğimi kullanılarak numuneye ait bazı temel elektriksel parametreler hesaplanmıştır. Aydınlatma altındaki kapasitans değişimi incelenmiş ve ışık şiddetine bağlı iletkenlik-gerilim karakteristikleri gözlemlenmiştir. Tüm deneysel sonuçlar, geleneksel yöntemlerle üretilen klasik yalıtkan malzemelerin yerine (Bi-ZnO) içeren Al/p-Si/Au yapılarının başarılı bir şekilde kullanılabileceğini göstermektedir.

Anahtar Kelimeler

Bi–katkılı ZnO ince film , Al/(BiZnO)/p-Si/Au (MIS) Schottky yapılar , Sığa ve iletkenlik ölçümleri

Etik Beyan

Yazarlar arasında çıkar çatışması bulunmamaktadır.

Destekleyen Kurum

Kırklareli Üniversitesi

Proje Numarası

KLUBAP 273

Teşekkür

Araştırmanın bir kısmı Kırklareli Üniversitesi İleri Teknolojiler Uygulama ve Araştırma Merkezi (İTÜAM) imkânları kullanılarak yürütülmüştür.

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