Electrical Characterization of Zn Based Al/Bi-ZnO/p-Si (MIS) Structures

Öz

Thin films are a fundamental part of the electronic devices, where multilayered thin films for multilayered structures were often used to devices in various forms. Among them, metal-insulator-semiconductor (MIS) structures are one of the most favourable structures which were used in various applications, solar harvesting devices, photodetectors, and logic circuits. In this work, Zn based thin-films were doped with Bi (0.5 % ratio) using hydrothermal synthesis and Al/Bi-ZnO/p-Si structures were produced. Various electrical properties such as capacitance – voltage (C–V), conductance – voltage (G/ω-V), and series resistance – voltage (Rs–V) were assessed. In the electrical investigation, influence of voltage signal on electrical properties were assessed. Possible factors affecting the electrical properties, such as interface/surface states (Nss) and charge/current transfer mechanism (CTM) were evaluated. Fundamental physical parameters of the sample were also calculated from the interception and slope of 1/C2 vs V plot. The alteration of capacitance under illumination was investigated where light intensity related conductance – voltage characteristics were observed. All experimental results are indicated that the fabricated Al/p-Si/Au structures with (Bi-ZnO) can be used instead of the conventional traditional insulators grown by some traditional-methods.

Anahtar Kelimeler

• Bi-doped ZnO thin film
• Al/(BiZnO)/p-Si/Au (MIS) Schottky structures
• Capacitance and conductance measurements

Zn Temelli Al/Bi-ZnO/p-Si (MIS) Yapıların Elektriksel Karakterizasyonu

Öz

İnce filmler, elektronik aygıtların temel bileşenlerinden biridir ve çok katmanlı yapılar için ince filmler, farklı form ve işlevlerdeki aygıtlarda sıklıkla kullanılmaktadır. Bu yapılar arasında, metal-yalıtkan-yarıiletken (MIS) yapılar, güneş enerjisi dönüşüm aygıtları, fotodedektörler ve mantık devreleri gibi çeşitli uygulamalarda yaygın olarak tercih edilen yapılardan biridir. Bu çalışmada, Zn temelli ince filmler hidrotermal sentez yöntemiyle %0,5 oranında Bi ile katkılanmış ve Al/Bi-ZnO/p-Si yapıları üretilmiştir. Bu yapılara ait çeşitli elektriksel özellikler; kapasitans-gerilim (C-V), iletkenlik-gerilim (G/ω-V) ve seri direnç-gerilim (Rs-V) ölçümleri ile incelenmiştir. Elektriksel incelemelerde, uygulanan gerilim sinyalinin bu özellikler üzerindeki etkisi değerlendirilmiştir. Elektriksel karakteristikleri etkileyebilecek olası faktörler, arayüzey durumları (Nss) ve yük/akım taşıma mekanizması (CTM) gibi etkenler dikkate alınarak analiz edilmiştir. Ayrıca, 1/C²–V grafiğinin kesim noktası ve eğimi kullanılarak numuneye ait bazı temel elektriksel parametreler hesaplanmıştır. Aydınlatma altındaki kapasitans değişimi incelenmiş ve ışık şiddetine bağlı iletkenlik-gerilim karakteristikleri gözlemlenmiştir. Tüm deneysel sonuçlar, geleneksel yöntemlerle üretilen klasik yalıtkan malzemelerin yerine (Bi-ZnO) içeren Al/p-Si/Au yapılarının başarılı bir şekilde kullanılabileceğini göstermektedir.

Anahtar Kelimeler

• Bi–katkılı ZnO ince film
• Al/(BiZnO)/p-Si/Au (MIS) Schottky yapılar
• Sığa ve iletkenlik ölçümleri

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