INFRARED DETECTING BEHAVIOURS OF Cu2NiSnS4 PHOTODIODES

Yıl 2020, Cilt: 6 Sayı: 2, 119 - 131, 31.12.2020

Mustafa İlhan Mümin Mehmet Koç

https://doi.org/10.34186/klujes.702575

Öz

A photodetector in Al/p-Si/Cu2NiSnS4/Al form was produced using sol-gel method. Scanning electron microscopy (SEM) was used in the structural assessment of the photodetectors. Microscopic investigations showed that Cu2NiSnS4 structures were formed in nanostructure in granular form. Current–time and current-voltage investigations confirmed that Al/p-Si/Cu2NiSnS4/Al photodiodes have infrared sensing properties. Photodetection properties such as linear dynamic rate, ideality factor, photosensitivity, and photoresponse characteristics were assessed. Results also validate the infrared sensing properties of the diodes. The barrier height of the Al/p-Si/Cu2CoSnS4/Al diodes was calculated as 0.466 eV. Ideality factor of the diodes was found to be 5.16. Results indicate that our Al/p-Si/Cu2CoSnS4/Al diodes are suitable for infrared tracking device applications.

Anahtar Kelimeler

Quaternary Functional Photodetectors, Infrared Detectors, Photodiodes, Photodetectors

INFRARED DETECTING BEHAVIOURS OF Cu2NiSnS4 PHOTODIODES

Öz

Al/p-Si/Cu2NiSnS4/Al yapıdaki fotodedektörler sol-jel yöntemi kullanılarak üretilmiştir. Taramalı elektron mikroskobu (SEM) kullanılarak fotodedektörler yapısal olarak incelenmiştir. Mikroskopik incelemeler sonucunda Cu2NiSnS4 yapının nanoformda sentezlendiği ve nanoparçacıkların granüler yapıda bir arada bulunduğu gözlemlenmiştir. Akım – zaman ve akım - voltaj gafikleri Al/p-Si/Cu2NiSnS4/Al yapıda üretilmiş olan diyotlarımızın kızılötesini ışığı hisedebilme özellikleri gösterdiğini göstermiştir. Fotodedektör özelliklerini incelemede kullanılan lineer dinamik oran, idalite faktörü, fotohassasiyet, fototepki karasteriklikleri gibi karaktersistik özellikler çalışmamızda detaylıca incelenmiştir. İncelenen fotodiyot karakteristikleri de fotodiyotlarımızın kızılötesi dedektör özellikleri gösterdiğini doğrulamıştır. Al/p-Si/Cu2NiSnS4/Al yapıdaki diyotlarımıza ait bariyer yüksekliği 0.466 eV olarak hesaplanırken idealite faktörü ise 5.16 olarak bulunmuştur. Sonuçlar incelendiğinde Al/p-Si/Cu2NiSnS4/Al yapıda üretilmiş fotodiyotların infrared tarama cihazlarında kullanılmaya uygun olduğu anlaşılmaktadır.

Anahtar Kelimeler

Dört Bileşenli Fonksiyonel Fotodedektörler, Kızıl Ötesi Dedektörleri, Fotodiyotlar

Kaynakça

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