THE ENERGY STATES IN 〖Ga〗_(1-x) 〖Al〗_x As/GaAs QUANTUM WELL WIRE LATTICE UNDER THE EFFECT OF EXTERNAL ELECTRIC FIELD

Yıl 2023, Cilt: 9 Sayı: 1, 23 - 35, 30.06.2023

Bahadır Bekar

https://doi.org/10.34186/klujes.1267996

Öz

In the lattice consisting of three quantum wires, the effect of the external electric field applied on the energy states of the electron is the focus of this study. The energy states and wave functions of the electron were calculated using the finite difference method with the effective mass approach. It was found that the energy states exhibit different behavior when the diameters of the quantum wires are considered as the same and different. When an electric field was applied to both quantum wire lattices, the electron's energy states showed interesting changes.

Anahtar Kelimeler

Quantum wire, electric field, energy crossing

Destekleyen Kurum

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Proje Numarası

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Teşekkür

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HARİCİ ELEKTRİK ALANI ETKİSİ ALTINDA 〖Ga〗_(1-x) 〖Al〗_x As/GaAs KUANTUM KUYU TEL ÖRGÜSÜNDEKİ ENERJİ DURUMLARI

Öz

Üç kuantum telinden oluşan örgüde, uygulanan dış elektrik alanın elektronun enerji durumları üzerindeki etkisi bu çalışmanın odak noktasıdır. Etkin kütle yaklaşımı ile sonlu farklar yöntemi kullanılarak elektronun enerji durumları ve dalga fonksiyonları hesaplanmıştır. Kuantum tellerinin çaplarının aynı ve farklı olduğu düşünüldüğünde enerji durumlarının farklı davranışlar sergiledikleri bulunmuştur. Her iki kuantum tel kafesine bir elektrik alanı uygulandığında, elektronun enerji durumları ilginç değişiklikler gösterdi.

Anahtar Kelimeler

Kuantum teli, elektrik alanı, enerji geçişi

Proje Numarası

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Kaynakça

• Montes, A., Duque, C. A., & PorrasMontenegro, N. (1997). The binding energies of shallow donor impurities in GaAs quantum-well wires under applied electric fields. Journal of Applied Physics, 81(12), 7890-7894.
• Duque, C. A., Montes, A., & Morales, A. L. (2001). Binding energy and polarizability in GaAs-(Ga,Al)As quantum-well wires. Physica B, 302, 84-87.
• Aktas S., Okan S. E., & Akbas, H. (2001). Electric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/AlxGa1-xAs quantum well-wires. Superlattices and Microstructures, 30(3), 129-134.
• Aktas, Ş., Boz F.K., Bilekkaya A., S.E. Okan, The electronic properties of a coaxial square GaAs/AlxGa1−xAs quantum well wire in an electric field, Physica E: Low-dimensional Systems and Nanostructures, Volume 41, Issue 8, 2009, Pages 1572-1576
• Bilekkaya, A., Aktas, S., Okan, S. E., & Boz, F. K. (2008). Electric and magnetic field effects on the binding energy of a hydrogenic impurity in quantum well wires with different shapes. Superlattices and Microstructures, 44(1), 96-105.
• Mughnetsyan, V. N., Barseghyan, M. G., & Kirakosyan, A. A. (2008). Binding energy and photoionization cross section of hydrogen-like donor impurity in quantum well-wire in electric and magnetic fields. Superlattices and Microstructures, 44(1), 86-95.
• Kasapoglu, E., Yesilgul, U., Sari, H., & Sokmen, I. (2005). The effect of hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wire under the electric field. Physica B-Condensed Matter, 368(1-4), 76-81.
• Baser, P., Elagoz, S., & Baraz, N. (2011). Hydrogenic impurity states in zinc-blende InxGa1-xN/GaN in cylindrical quantum well wires under hydrostatic pressure. Physica E-Low-Dimensional Systems & Nanostructures, 44(2), 356-360.
• Çiçek E., Mese A. I., Ozkapi B., & Erdoğan I.(2021). Combined effects of the hydrostatic pressure and temperature on the self-polarization in a finite quantum well under laser field. Superlattices and Microstructures, Volume 155, July 2021, 106904
• Khordad, R. (2009). Effect of temperature on the binding energy of excited states in a ridge quantum wire. Physica E-Low-Dimensional Systems & Nanostructures, 41(4), 543-547.
• Kasapoglu, E., Ungan, F., Sari, H., & Sokmen, I. (2010). The hydrostatic pressure and temperature effects on donor impurities in cylindrical quantum wire under the magnetic field. Physica E-Low-Dimensional Systems & Nanostructures, 42(5), 1623-1626.
• Niculescu, E. C., Burileanu, L. M., & Radu, A. (2008). Density of impurity states of shallow donors in a quantum well under intense laser field. Superlattices and Microstructures, 44(2), 173-182.
• [Niculescu, E. C., Burileanu, L. M., Radu, A., & Lupascu, A. (2011). Anisotropic optical absorption in quantum well wires induced by high-frequency laser fields. Journal of Luminescence, 131(6), 1113-1120.
• Boz F. K., Aktas S., Bekar B., & Okan, S. E. (2012). Laser field-driven potential profiles of double quantum wells. Physics Letters A, 376(4), 590-594.
• Kasapoglu, E., Sari, H., Yesilgul, U., & Sokmen, I. (2006). The effect of intense laser field on the photoionization cross-section and binding energy of shallow donor impurities in graded quantum-well wire under an electric field. Journal of Physics-Condensed Matter, 18(27), 6263-6271.
• Narayani, V., & Sukumar, B. (1994). Polarizability of a Shallow Donor in a Quantum-Well Wire- Geometric Effects. Solid State Communications, 90(9), 575-579.
• Ulas, M., Akbas, H., & Tomak, M. (1997). Shallow donors in a quantum well wire: Electric field and geometrical effects. Physica Status Solidi B-Basic Solid State Physics, 200(1), 67-73.
• Ulas, M., Erdogan, I., Cicek, E., & Dalgic, S. S. (2005). Self polarization in GaAs-(Ga, Al)As quantum well wires: electric field and geometrical effects. Physica E-Low-Dimensional Systems & Nanostructures, 25(4), 515-520.
• Akankan, O., Erdogan, I., Mese, A.I. et al. (2021) The effects of geometrical shape and impurity position on the self-polarization of a donor impurity in an infinite GaAs/AlAs tetragonal quantum dot. Indian Journal of Physics 95, 1341–1344.
• Mese A, I., Cicek E., Erdogan I., Akankan O., and H Akbas, (2017). The effect of dielectric constant on binding energy and impurity self-polarization in a GaAs–Ga1-xAlxAs spherical quantum dot, Indian Journal of Physics 91(3):263–268.
• Bekar B., Boz F.K., Aktas B., & Okan S. E. (2019). The Effect on the Optical Absorption Coefficients due to the Positions in the Plane of Square GaAs /Al(GaAs) Quantum Well Wire under the Laser Field. Acta Physıca Polonıca A 136(6), 882-88.