A Study of The Main Electrophysical Parameters of Semiconductor - Polymer Based Composite Varistors

Öz

The main electrophysical parameters of composite varistors made on the basis of filled zinc oxide (ZnO), monocrystalline silicon (Si), gallium arsenide (GaAs), indium arsenide (InAs) and various polymers were studied in this work. In the article, the sample preparation process is described, interphase interaction is discussed. The nonlinearity coefficient () and opening voltages (Uop) of volt-ampere characteristics in filled ZnO, monocrystalline Si ceramic semiconductors and polymer-based composite varistors were determined. The volt-ampere characteristics of monocrystalline Si, GaAs and InAs and polymer-based composites were also measured. The shape of the potential hole in the mentioned composites has been determined. It was found that the opening voltage and the nonlinearity of the volt-ampere characteristic of polymer-semiconductor composites mainly depend on the properties of the 3rd phase. According to the experiment, it was found that as the filler volume percentage increases in ZnO, monocrystalline Si, GaAs and InAs and polymer-based composites, the increases in all samples, and the Uop decreases. Depending on the type of dispersant, the opening voltages of the composites are different. Thus, in ZnO-polymer-based composites with additives, this voltage varies between 130-220 V, and in monocrystalline Si, GaAs and InAs and polymer-based composites, it varies between 5-50 V. The analysis of the shape of the potential hole in composites based on monocrystalline Si, GaAs, and InAs has shown that the value of the forbidden zone in the composites decreases, and the value of the potential barrier decreases sharply.

Anahtar Kelimeler

• ZnO
• Monocrystalline Si
• Composite varistors
• Ceramic
• Polymer
• Opening voltage

Yarı İletken-Polimer Esaslı Kompozit Varistörlerin Ana Elektrofiziksel Parametrelerinin İncelenmesi

Öz

Bu çalışmada katkılı çinko oksit (ZnO), monokristalin silikon (Si), galyum arsenit (GaAs), indiyum arsenit (InAs) ve çeşitli polimerler temelinde yapılan kompozit varistörlerin ana elektrofiziksel parametreleri incelenmiştir. Makalede numune hazırlama süreci anlatılmakta, fazlar arası etkileşim tartışılmaktadır. Katkılı ZnO, monokristal Si seramik yarı iletkenler ve polimer bazlı kompozit varistörlerdeki volt-amper özelliklerinin doğrusal olmama katsayısı () ve açılış gerilimleri (Uop) belirlendi. Monokristal Si, GaAs ve InAs ile polimer bazlı kompozitlerin volt-amper özellikleri de ölçüldü. Söz konusu kompozitlerdeki potansiyel deliğin şekli belirlenmiştir. Polimer-yarı iletken kompozitlerin açılış geriliminin ve volt-amper karakteristiğinin doğrusal olmama durumunun esas olarak 3.fazın özelliklerine bağlı olduğu bulunmuştur. Deneye göre ZnO, monokristal Si, GaAs ve InAs ile polimer bazlı kompozitlerde dolgu hacim yüzdesi arttıkça tüm numunelerde ’ninarttığı, Uop’ninazaldığı tespit edildi. Dağıtıcının türüne bağlı olarak kompozitlerin açılış gerilimleri farklıdır. Dolayısıyla ZnO-polimer bazlı katkı maddeli kompozitlerde bu voltaj 130-220 V arasında değişirken, monokristal Si, GaAs ve InAs ile polimer bazlı kompozitlerde 5-50 V arasında değişmektedir. Monokristal Si, GaAs ve InAs bazlı kompozitlerdeki potansiyel delik, kompozitlerdeki yasak bölge değerinin azaldığını, potansiyel bariyer değerinin ise keskin bir şekilde azaldığını göstermiştir.

Anahtar Kelimeler

• ZnO
• Monokristal Si
• Kompozit varistörler
• Seramik
• Polimer
• Açılış voltajı

Kaynakça

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