INVESTIGATION OF ELECTRICAL PROPERTIES OF Al/PAN/p-Si MPS DEVICES FABRICATED BY SPIN COATING AND SCREEN-PRINTING TECHNIQUES

Abstract

In this work, the polyacrylonitrile polymer was coated on top of p-Si by two different techniques, and the electrical characterization of the fabricated devices was held. Screen-printing and spin coating techniques were used to fabricate the metal/polymer/semiconductor devices, and the devices were finished with Ohmic contact of aluminum on the Si side, and with silver on the polymer side by using evaporation via chemical vapor deposition. The dark current - voltage and frequency dependent capacitance - voltage measurements of the fabricated Metal Polymer Semiconductor structure have been performed. Current and voltage measurements were carried out in the dark and in the voltage range of -2.0 V to +2.0 V. Capacitance voltage measurements were carried out in the dark, in the voltage range of -4.0 V to +4.0 V, and in the frequency range of 20 kHz to 1 MHz. The results of electrical characterization have been discussed in view of rectification of devices, interface states, interface dipoles, conduction of carriers, polarization mechanism, and relaxation process.

Keywords

• Polymer
• Polyacrylonitrile
• MPS
• Interface
• Polarization mechanism
• Relaxation

Supporting Institution

Herhangi bir kurum tarafından finansal destek almamıştır.

Ethical Statement

Bu çalışmada herhangi bir etik beyan gerekliliği bulunmamaktadır.

Thanks

Deneysel aşamadaki katkılarından dolayı Dr. Osman Pakma ve Dr. Özcan Birgi'ye teşekkürlerimi sunarım.

DÖNDÜREREK KAPLAMA VE SERİGRAFİ BASKI YÖNTEMLERİ İLE ÜRETİLEN Al/PAN/p-Si MPY AYGITININ ELEKTRİKSEL ÖZELLİKLERİNİN ARAŞTIRILMASI

Abstract

Bu çalışmada poliakrilonitril polimeri p-Si üzerine iki farklı teknikle kaplanmış ve üretilen aygıtların elektriksel karakterizasyonu akım voltaj, frekans bağımlı kapasitans – voltaj ölçümleri aracılığı ile yapılmıştır. Metal/Polimer/Yarı iletken aygıtları üretmek için serigrafi baskı ve döndürerek kaplama teknikleri kullanıldı ve her iki aygıt da kimyasal buhar biriktirme tekniği kullanılarak buharlaştırma yoluyla p-Si katmanından alüminyum ile polimer katmanından gümüş ile Ohmik kontak yapısıyla tamamlandı. Üretilen Metal Polimer Yarı iletken aygıtların karanlık akım - gerilim ve frekansa bağlı kapasitans - gerilim ölçümleri yapılmıştır. Akım - Gerilim ölçümleri karanlık ortamda ve -2,0 V - +2,0 V aralığında yapılmıştır. Kapasitans - Voltaj ölçümleri de yine karanlık ortamda -4,0 V - +4,0 V voltaj aralığında ve 20 kHz - 1 MHz frekans aralığında gerçekleştirilmiştir. Ölçümlerin sonuçları analiz edilerek aygıtların elektriksel karakterizasyonu yapılmıştır. Akım - voltaj ölçümlerinin analizi ile aygıtların doğrultma faktörleri; frekans bağımlı kapasitans - voltaj ölçümlerinin analizleri ile ise arayüz durumları, arayüz dipolleri, taşıyıcıların iletimi, kutuplanma mekanizması ve durulma süreci açısından tartışılmıştır.

Keywords

• Polimer
• Poliakrilonitril
• MPS
• Arayüz
• Polarizasyon mekanizması
• Durulma

References

1. Sevgili, Ö., Taşçıoğlu, İ., Boughdachi, S., Azizian-Kalandaragh, Y., and Altındal, Ş., “Examination of Dielectric Response of Au/HgS-PVA/n-Si (MPS) structure by Impedance Spectroscopy Method”, Phys. B Condens. Matter., 566, 125-135, 2019.
2. Uluşan, A.B., and Tataroğlu, A., “Frequency-Dependent Dielectric Parameters of Au/TiO2/n-Si (MIS) Structure”, Silicon, 10(5), 2071-2077, 2018.
3. Ataseven, T., and Tataroǧlu, A., “Temperature-Dependent Dielectric Properties of Au/Si3N4/n-Si (Metal - Insulator - Semiconductor) Structures”, Chinese Phys. B, 22(11), 117310, 2013.
4. Buyukbas-Ulusan, A., Taşçıoğlu, İ., Tataroğlu, A., Yakuphanoğlu, F., and Altındal, S., “A Comparative Study on the Electrical and Dielectric Properties of Al/Cd-Doped ZnO/p-Si Structures”, J. Mater. Sci.: Mater. Electron., 30(13), 12122–12129, 2019.
5. Shahbazi, M., Bahari, A., and Ghasemi, S., “Structural and Frequency-Dependent Dielectric Properties of PVP-SiO2-TMSPM Hybrid Thin Films”, Org. Electron., 32, 100-108, 2016.
6. Lim, L.W., Aziz, F., Muhammad, F.F., Supangat, A., and Sulaiman, K., “Electrical Properties of Al/PTB7-Th/n-Si Metal-Polymer-Semiconductor Schottky Barrier Diode”, Synth. Met., 221, 169-175, 2016.
7. Özden, Ş., Avcı, N., Pakma, O., and Kariper, I.A., “Influence of Illumination Intensity on the Electrical Properties of Al/NOA65/p-Si/Al Heterojunction MPS Device”, J. Mater. Sci.: Mater. Electron., 33(16), 12796-12807, 2022.
8. Wong, C.H., Lam, L.Y.F., Hu, X., Tsui, C.P., and Zatsepin, A.F., “Schottky-Diode Design for Future High-Speed Telecommunications”, Nanomater., 13(9), 1448, 2023.

9. Efeoǧlu, H., Turut, A., and Gül, M., “An Experimental Study: Dependence of Schottky Diode Parameters on Schottky Contact Area Size”, Opt. Mater., 142, 114038, 2023.
10. Dikicioğlu, E., and Polat, B., “Analysis of Current-Voltage Properties of Al/p-si Schottky Diode with Aluminium Oxide Layer”, Gazi Univ. J. Sci. Part A: Eng. Innov., 11(1), 125–134, 2024.
11. Turut, A., and Köleli, F., “Semiconductive Polymer-Based Schottky Diode”, J. Appl. Phys., 72(2), 818-819, 1992.
12. Wang, H., Hsu, J., Yang, G., and Yu, C., “Novel Organic Schottky Barrier Diode Created in a Single Planar Polymer Film”, Adv. Mater., 28(43), 9545–9549, 2016.
13. Barkhordari, A., Mashayekhi, H.R., Amiri, P., Altındal, Ş., and Azizian-Kalandaragh, Y., “Optoelectric Response of Schottky Photodiode with a PVP: ZnTiO3 Nanocomposite as an Interfacial Layer”, Opt. Mater., 148, 114787, 2024.
14. Taşci, E., “A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface”, Gazi Üniversitesi Fen Bilim. Derg. Part C: Tasarım ve Teknol., 11(2), 398-406, 2023.
15. Tomozawa, H., Braun, D., Phillips, S., Heeger, A.J., and Kroemer, H., “Metal-polymer schottky barriers on cast films of soluble poly(3-alkylthiophenes)”, Synth. Met., 22(1), 63-69, 1987.
16. Tomozawa, H., Braun, D., Phillips, S.D., Worland, R., Heeger, A.J., and Kroemer, H., “Metal-Polymer Schottky Barriers on Processible Polymers”, Synth. Met., 28(1-2), 687-690, 1989.
17. Liang, G., Cui, T., and Varahramyan, K., “Fabrication and Electrical Characteristics of Polymer-Based Schottky Diode”, Solid. State. Electron., 47(4), 691-694, 2003.
18. Rikken, G.L.J.A., Braun, D., Staring, E.G.J., and Demandt, R., “Schottky Effect at a Metal-Polymer Interface”, Appl. Phys. Lett., 65(2), 219-221, 1994.
19. Sönmezoǧlu, S., Şenkul, S., Taş, R., Çankaya, G., and Can, M., “Electrical and Interface State Density Properties of Polyaniline-Poly-3-Methyl Thiophene Blend/p-Si Schottky Barrier Diode”, Solid State Sci., 12(5), 706-711, 2010.
20. Wang, H., Cheng, C., Zhang, L., Liu, H., Zhao, Y., Guo, Y., Hu, W., Yu, G., and Liu, Y., “Inkjet Printing Short-Channel Polymer Transistors with High-Performance and Ultrahigh Photoresponsivity”, Adv. Mater., 26(27), 4683-4689, 2014.
21. Zhu, F., Lin, J., Wu, Z.L., Qu, S., Yin, J., Qian, J., and Zheng, Q., “Tough and Conductive Hybrid Hydrogels Enabling Facile Patterning”, ACS Appl. Mater. Interfaces, 10(16), 13685-13692, 2018.
22. Burroughes, J.H., Bradley, D. D.C., Brown, A. R., Marks, R. N., Mackay, K., Friend, R. H., Burns, P. L., and Holmes, A. B., “Light-Emitting Diodes Based on Conjugated Polymers”, Nat., 347(6293), 539-541, 1990.
23. Almafie, M. R., Marlina, L., Riyanto, R., Jauhari, J., Nawawi, Z., and Sriyanti, I., “Dielectric Properties and Flexibility of Polyacrylonitrile/Graphene Oxide Composite Nanofibers”, ACS Omega, 7, 33087−33096, 2022.
24. Tao, J., Wang, Y., Zheng, X., Zhao, C., Jin, X., Wang, W., Lin, T., “A review: Polyacrylonitrile as high-performance piezoelectric materials”, Nano Energy, 118, 108987-109011, 2023.
25. Ying, S., Ma, Z., Zhou, Z., Tao, R., Yan, K., Xin, M., Li, Y., Pan, L., and Shi, Y., “Device Based on Polymer Schottky Junctions and Their Applications: A Review”, IEEE Access, 8, 189646-189660, 2020.
26. Rhoderick, E. H., Williams, R.H., Metal Semiconductor Contacts, 2nd Ed., Clarendon Press, Oxford, 1988.
27. Sze, S.M., and Ng, K.K., Physics of Semiconductor Devices., John Wiley & Sons, Inc., New Jersey, 2007.
28. Pakma, O., Serin, N., Serin, T., and Altindal, Ş., “The Double Gaussian Distribution of Barrier Heights in Al/TiO2/p-Si (Metal-Insulator-Semiconductor) Structures at Low Temperatures”, J. Appl. Phys., 104(1), 014501, 2008.
29. Majumdar, S., Dey, A., Sahu, R., Lepcha, G., Dey, A., Ray, P.P., and Dey, B., “An Aromatic Acid Based Supramolecular Zn(II)-Metallogel for Fabricating Light-Sensitive Metal-Semiconductor Junction Type Schottky Diode with Satisfactory Rectification Ratios”, Mater. Res. Bull., 157, 112003, 2023.
30. Özden, Ş., Avcı, N., Pakma, O., and Kariper, A., “NOA61 Photopolymer as an Interface for Al/NOA61/p-Si/Al Heterojunction MPS Device”, J. Mater. Sci.: Mater. Electron., 32(23), 27688-27697, 2021.
31. Losee, D.L., “Admittance spectroscopy of impurity levels in Schottky barriers”, J. Appl. Phys., 46(5), 2204-2214, 1975.
32. Bozdemir, S., “An Ising Model Analysis of Dielectric Polarization. I. Analysis for the Dielectric Response of Infinite and Finite Dipolar Chains in Dielectrics”, Phys. status solidi, 103(2), 459-470, 1981.
33. Karadaş, S., Yerişkin, S.A., Balbaşı, M., and Azizian-Kalandaragh, Y., “Complex Dielectric, Complex Electric Modulus, and Electrical Conductivity in Al/(Graphene-PVA)/p-Si (Metal-Polymer-Semiconductor) Structures”, J. Phys. Chem. Solids, 148, 109740, 2021.
34. Azizian-Kalandaragh, Y., Yücedağ, İ., Ersöz Demir, G., and Altındal, Ş., “Investigation of the Variation of Dielectric Properties by Applying Frequency and Voltage to Al/(CdS-PVA)/p-Si Structures”, J. Mol. Struct., 1224, 129325, 2021.
35. Akay, D., Gökmen, U., and Ocak, S.B., “An Evaluation of Dielectric Qualities by Using Frequency Dependence in Superbenzene-Ring Based Organic Polymer-Semiconductors”, Mater. Chem. Phys., 245, 122708, 2020.
36. Tataroğlu, A., Altındal Ş., and Azizian-Kalandaragh, Y., “C-V-f and G/ω-V-f Characteristics of Au/(In2O3-PVP)/n-Si (MPS) Structure”, Phys. B Condens. Matter., 582, 411996, 2020.
37. Tataroğlu, A., Al-Ghamdi̇, A.A., and Yakuphanoglu, F., “Frequency dependence of dielectric parameters of structure with Bi3.25La0.75Ti3O12 thin film prepared by sol-gel method”, J. Optoelectron. Adv. Mater., 19(9-10), 629-633, 2017.
38. Alptekin, S., Tataroğlu, A., and Altındal, Ş., “Dielectric, Modulus and Conductivity Studies of Au/PVP/n-Si (MPS) Structure in the Wide Range of Frequency and Voltage at Room Temperature”, J. Mater. Sci.: Mater. Electron., 30(7), 6853-6859, 2019.
39. Nicollian, E., and Brews, J., MOS/Metal Oxide Semiconductor/Physics and Technology, Wiley-Interscience, New York, 1982.
40. Sze, S.M., and Kwok, K.N., Physics of Semiconductor Devices - 2nd Edition, John Wiley & Sons, Inc., USA, 1981.
41. Demirezen, S., Eroğlu, A., Azizian-Kalandaragh, Y., and Altındal, Ş., “Electric and Dielectric Parameters in Au/n-Si (MS) Capacitors with Metal Oxide-Polymer Interlayer as Function of Frequency and Voltage”, J. Mater. Sci.: Mater. Electron., 31(18), 15589-15598, 2020.
42. Demirezen, S., Tanrıkulu, E.E., and Altındal, Ş., “The Study on Negative Dielectric Properties of Al/PVA (Zn-doped)/p-Si (MPS) Capacitors”, Indian J. Phys., 93(6), 739–747, 2019.
43. Demirezen, S., Kaya, A., Yerişkin, S.A., Balbaşı, M., and Uslu, İ., “Frequency and Voltage Dependent Profile of Dielectric Properties, Electric Modulus and ac Electrical Conductivity in the PrBaCoO Nanofiber Capacitors”, Results Phys., 6, 180–185, 2016.
44. Yeriskin, S.A., Unal, H.I., and Sari, B., “Electrical and Dielectric Characteristics of Al/Polyindole Schottky Barrier Diodes. II. Frequency Dependence”, J. Appl. Polym. Sci., 120(1), 390–396, 2011.
45. Ershov, M., Liu, H.C., Li, L., Buchanan, M., Wasilewski, Z.R., and Jonscher, A.K., “Negative Capacitance Effect in Semiconductor Devices”, IEEE Trans. Electron Devices, 45(10), 2196–2206, 1998.
46. Tecimer, H., “On the Frequency–Voltage Dependent Electrical and Dielectric Profiles of the Al/(Zn-PVA)/p-Si Structures”, J. Mater. Sci.: Mater. Electron., vol. 29, no. 23, pp. 20141–20145, 2018.
47. Yücedağ, I., Kaya, A., Altındal, Ş., and Uslu, I., “Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature”, Chin. Phys. B, 23(4), 047304, 2014.
48. Güçlü, Ç.Ş., Özdemir, A.F., and Altindal, Ş., “Double Exponential I–V Characteristics and Double Gaussian Distribution of Barrier Heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-Type Schottky Barrier Diodes in Wide Temperature Range”, Appl. Phys. A, 122(12), 1032, 2016.
49. Yerişkin, S.A., Balbaşı, M., and Orak, İ., “Frequency Dependent Electrical Characteristics and Origin of Anomalous Capacitance–Voltage (C–V) Peak in Au/(Graphene-Doped PVA)/n-Si Capacitors”, J. Mater. Sci.: Mater. Electron., 28(11), 7819–7826, 2017.