The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter

Year 2017, , 135 - 148, 14.11.2017

Milaim Zabeli Nebi Caka Myzafere Limani Qamil Kabashi

https://doi.org/10.28978/nesciences.358859

Abstract

The objective of this paper is to research the impact of electrical and physical parameters that
characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS
inverter for static mode of operation. In addition to this, the paper also aims at exploring the
directives that are to be followed during the design phase of the CMOS inverters that enable
designers to design the CMOS inverters with the best possible performance, depending on
operation conditions. The CMOS inverter designed with the best possible features also enables the
designing of the CMOS logic circuits with the best possible performance, according to the
operation conditions and designers’ requirements.

Keywords

CMOS inverter, threshold voltage, voltage critical value, noise margins, transconductance parameter

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