Abstract: Semiconductors that form the basis of electronics; examination of its electrical, optical, magnetic, etc. properties in a wide range is thought to accelerate technological development and progress. X-Ray Diffraction (XRD) spectrometry, which provides a lot of information about the structural properties of semiconductor materials, is especially important in this respect. With XRD analysis, properties such as material structure (crystalline/amorphous), qualitative analysis for crystalline materials, calculation of lattice parameter, determination of interplanetary distance, calculation of miller indices, determination of crystal lattice structure can be determined. In this study, Fe2O3 structure has been investigated, which attracts great attention due to its application potential such as field effect transistors, solar cells, UV photodetectors and gas sensors. The Fe2O3 structure with an average crystal size of 8.6 nm and a preferential crystal orientation (311) grown by RF magnetron sputtering method was investigated by XRD technique.
Birincil Dil | İngilizce |
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Konular | Yoğun Madde Karakterizasyon Tekniği Geliştirme |
Bölüm | CİLT1 SAYI 1 |
Yazarlar | |
Yayımlanma Tarihi | 30 Aralık 2021 |
Yayımlandığı Sayı | Yıl 2021 Cilt: 1 Sayı: 1 |