Year 2019, Volume 15, Issue 2, Pages 151 - 160 2019-06-30

Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature

Asim Mantarcı [1]

19 25

Indium Gallium Nitride  thin film was successfully grown on the  substrate using an RF magnetron sputter under condition of different substrate temperatures. Various experimental measurements were taken to understand effect of substrate temperature on the structure of thin film and results were analyzed. Grazing mode of XRD results confirmed that  thin film has a hexagonal structure with  plane for  and substrate temperature. It was seen that structural parameters of thin film show a change with substrate temperature change. Reasons were discussed. Strain and stress values in  thin film were calculated from experimental results and it was found that all thin film has compressive stress. Morphological parameters of thin film were measured by AFM and it was understood that these properties are varied by changing substrate temperature. Also, growth mode of some thin film was found to be layer-plus-island mode (Stranski-Krastanov growth mode), others was found to be layer by layer growth mode (Frank van der Merwe mode). SEM analysis gives that increasing substrate temperature worsened the surface structure of  thin film; it is compatible with and supports XRD results. Compositional values in  thin film were found from XPS analysis. In addition to our material, carbon and oxygen have also been obtained from XPS results, as expected. Detailed structural and morphological properties of thin film have been seen to change by changing substrate temperature and we believe this may play an important role in the production of  based optoelectronic devices.

InGaN, thin film technology, RF magnetron sputtering, substrate temperature
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Primary Language en
Subjects Engineering
Published Date 30-06-2019
Journal Section Articles
Authors

Orcid: 0000-0001-8369-3559
Author: Asim Mantarcı (Primary Author)
Institution: MUŞ ALPARSLAN UNİVERSİTESİ
Country: Turkey


Dates

Publication Date: June 30, 2019

Bibtex @research article { cbayarfbe486961, journal = {Celal Bayar University Journal of Science}, issn = {1305-130X}, eissn = {1305-1385}, address = {Celal Bayar University}, year = {2019}, volume = {15}, pages = {151 - 160}, doi = {10.18466/cbayarfbe.486961}, title = {Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature}, key = {cite}, author = {Mantarcı, Asim} }
APA Mantarcı, A . (2019). Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature. Celal Bayar University Journal of Science, 15 (2), 151-160. DOI: 10.18466/cbayarfbe.486961
MLA Mantarcı, A . "Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature". Celal Bayar University Journal of Science 15 (2019): 151-160 <http://dergipark.org.tr/cbayarfbe/issue/46535/486961>
Chicago Mantarcı, A . "Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature". Celal Bayar University Journal of Science 15 (2019): 151-160
RIS TY - JOUR T1 - Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature AU - Asim Mantarcı Y1 - 2019 PY - 2019 N1 - doi: 10.18466/cbayarfbe.486961 DO - 10.18466/cbayarfbe.486961 T2 - Celal Bayar University Journal of Science JF - Journal JO - JOR SP - 151 EP - 160 VL - 15 IS - 2 SN - 1305-130X-1305-1385 M3 - doi: 10.18466/cbayarfbe.486961 UR - https://doi.org/10.18466/cbayarfbe.486961 Y2 - 2019 ER -
EndNote %0 Celal Bayar University Journal of Science Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature %A Asim Mantarcı %T Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature %D 2019 %J Celal Bayar University Journal of Science %P 1305-130X-1305-1385 %V 15 %N 2 %R doi: 10.18466/cbayarfbe.486961 %U 10.18466/cbayarfbe.486961
ISNAD Mantarcı, Asim . "Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature". Celal Bayar University Journal of Science 15 / 2 (June 2019): 151-160. https://doi.org/10.18466/cbayarfbe.486961
AMA Mantarcı A . Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature. Celal Bayar Univ J Sci. 2019; 15(2): 151-160.
Vancouver Mantarcı A . Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature. Celal Bayar University Journal of Science. 2019; 15(2): 160-151.