Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

Year 2021, , 257 - 265, 30.04.2021

Serap Yiğit Yasemin Gündoğdu , Hamdi Şükür Kılıç

https://doi.org/10.35414/akufemubid.867847

Abstract

In this study, IGZO thin films were deposited on SLG and p-Si wafer at room temperature, under oxygen gas pressure of 5×10-2 and 7×10-2 mbar, using PLD technique and these thin films were annealed at 300oC temperature. IGZO thin films were grown in amorphous structure. As the oxygen gas pressure was increased, the particle size in the thin films were increased. IGZO/p-Si heterojunction diode was produced based on IGZO thin film that was grown at oxygen gas pressure of 7×10-2 mbar and not annealed, and J-V curves of this diode in darkness and under the illumination condition were obtained and then its ideality factor and barrier height were calculated. In an illumination condition, n,〖 R〗_s and Ф_b values of IGZO/Si heterojunction diode were calculated by the conventional J-V, Cheung Cheung and Norde methods. Results obtained in this work have been interpreted as well as concluded to be close to each other.

Keywords

IGZO, , thin film, , diode, , cheung cheung, Norde, PLD

Supporting Institution

Selçuk Üniversitesi Bilimsel Araştırma Projeleri Koordinatörlüğü

Project Number

14401025 and 16101007

Thanks

Authors kindly would like to thank, - Selçuk University, High Technology Research and Application Center and Selçuk University, Selçuk University, Laser Induced Proton Therapy Application and Research Center for supplying with Infrastructure and - Selçuk University, Scientific Research Projects Coordination (BAP) Unit for grands via projects with references of 14401025 and 16101007

IGZO İnce Filme Dayalı Olarak Üretilen Heteroeklem Diyotun Elektriksel Özellikleri

Abstract

Bu çalışmada, PLD tekniği kullanarak oda sıcaklığındaki SLG ve p-Si wafer üzerine 5×10-2 ve 7×10-2 mbar oksijen gaz basıncı altında IGZO ince filmler üretilmiş ve 300o C sıcaklıkta tavlanmışlardır. IGZO ince filmler amorf yapıda büyümüşlerdir. Oksijen gaz basıncı artarken, ince filmi oluşturan parçacıkların boyutu büyümüştür. 7×10-2 mbar oksijen gaz basıncı altında büyütülmüş ve tavlanmamış IGZO ince filme dayalı olarak IGZO/Si heteroeklem diyotu üretilmiş ve bu diyotun karanlık ve aydınlık şartlarda J-V eğrileri elde edilmiş, ideality faktörleri ve bariyer yükseklikleri hesaplanmıştır. Aydınlık ortam için, J-V, Cheung Cheung ve Norde metotları ile IGZO/Si heteroeklem diyotun n,〖 R〗_s and Ф_b değerleri hesaplanmıştır. Bu çalışmadan elde edilen sonuçlar analiz edilmiş ve bulunan değerlerin birbirlerine yakın olduğu yorumu yapılmıştır.

Keywords

IGZO, , ince film, diyot, Cheung Cheung, Norde, PLD

Project Number

14401025 and 16101007

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