SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ

Abstract

Geçirgen iletken oksitlerden biri olan indiyum oksit (In2O3) yarıiletken filmleri spray pyrolysis yöntemiyle 300, 350 ve 400 °C taban sıcaklıklarında cam tabanlar üzerine elde edilmiştir. X‐ışını kırınım desenleri incelendiğinde, numunelerin cisim merkezli kübik In2O3 kristal yapısına sahip olduğu ve taban sıcaklığı artışının filmlerin yapısal özelliklerini iyileştirdiği belirlenmiştir. Alan emisyon taramalı elektron mikroskobu görüntülerinden, elde edilen filmlerin yüzeye iyi tutunduğu, homojen bir dağılım sergilediği ve taneli bir yapılanmanın olduğu saptanmıştır. Geçirgenlik ölçümlerinden numunelerin direkt bant geçişine sahip olduğu ve bant aralığı değerlerinin 3,38 ‐ 3,67 eV aralığında değiştiği belirlenmiştir. Numunelerin kırılma indisi ve sönüm katsayısı spektrumundan envelope yöntemi yardımıyla incelenmiştir. In2O3filmlerinin dielektrik sabitleri (n, k, ε1 ve ε∞), plazma frekansı ωpve taşıyıcı yoğunluğu Nopt gibi optik parametreleri de belirlenmiştir

Keywords

• İndiyum Oksit, Spray Pyrolysis, Envelope Yöntemi, Dielektrik Sabitler

Structural and Optical Properties of In2O3 Films Produced by SprayPyrolysis Technique

Abstract

Indium oxide (In2O3) semiconducting films, as one of important transparent conducting oxides, have been produced by spray pyrolysis technique on glass substrates at 300, 350 and 400 °C substrate temperatures. X‐ray diffraction studies showed that the samples have body centered cubic In2O3 structure and the increasing of substrate temperature improves the structural properties of the films. From field emission scanning electron microscopy results, the films adhered well to the substrates and show a homogeneous distribution with layers of fine grains. The samples have exhibited direct transition with the band gap values lying in the range between 3.38 – 3.67 eV using transmittance measurements. The refractive index and extinction coefficient as a function of wavelength for the samples were investigated from reflectance spectrum by applying the envelope method in the strongly absorbing regime. The optical parameters of the In2O3

Keywords

• Indium oxide, Spray pyrolysis, Envelope method, Dielectric constants

References

1. Weiher, R.L., Ley, R.P. 1966. Optical Properties of Indium Oxide: J. Appl. Phys., Cilt. 37, s. 299–302. DOI: 10.1063/s1.1707830
2. Senthil Kumar, V., Vickraman, P. Annealing 2010.
3. Dependent on Structural, Optical and Electrical Properties of Indium Oxide Thin Films Deposited By Electron Beam Evaporation Method: Current Applied Physics, Cilt. 10, s. 880–885.
4. 1016/j.cap.2009.10.014 DOI: [3] Prince, J.J., Ramamurthy,
5. S., Subramanian, B., Sanjeeviraja, C., Jayachandran, M. 2002. Spray Pyrolysis Growth and Material Properties of In2O3 Films: Journal of Crystal Growth, Cilt. 240, s. 142– 151. 0248(01)02161‐3
6. Korotcenkov, G., Brinzari, V., Ivanov, M., Cerneavschi, A., Rodriguez, J., Cirera, A., Cornet, A., Morante, J. 2005. Structural Stability of Indium Oxide Films Deposited by Spray Pyrolysis
7. Annealing: Thin Solid Films, Cilt. 479,
8. 1016/j.tsf.2004.11.107 Thermal s. 38–51.

9. DOI: [5] Girtan, M., Folcher, G. 2003. Structural and Optical Properties of Indium Oxide Thin Films Prepared by an Ultrasonic Spray CVD Process: Surface and Coatings Technology, Cilt. 172, s. 242–250. DOI: 10.1016/s0257‐8972(03)00334‐7
10. Shanmugan, S., Mutharasu, D., Kamarulazizi,
11. Rhombohedral InO Thin Films Preparation From in Metal Film Using Oxygen Plasma: IEEE‐ICSE Proc., s. 711‐715.
12. [7] Shannon, R.D. 1966. New High Phases Pressure
13. Corundum Structure: Solid State Communications, Cilt. 4, s. 629‐630. DOI:
14. 1109/SMElec.2012.6417242
15. Prewitt, C.T., Shannon, R.D., Rogers, D.B., Sleight, A.W. 1969. C Rare Earth Oxide‐Corundum Transition and Crystal Chemistry of Oxides Having the Corundum Structure: Inorg. Chem., Cilt. 8, s. 1985–1993. DOI: 10.1021/ic50079a033
16. Yu, D., Yu, S‐H., Zhang, S., Zuo, J., Wang, Metastable
17. Nanofibers Templated from InOOH Nanofibers
18. Pressure: Advanced Functional Materials, Cilt. 13, s. 497–501. DOI: 10.1002/adfm.200304303 2003. In2O3 under
19. Ambient [10] Pan, C.A., Ma, T.P. 1980. High‐ Quality Transparent Conductive Indium Oxide Films Prepared by Thermal Evaporation: Appl. Phys. Lett., Cilt. 37, s. 163‐165. DOI: 10.1063/1.91809
20. Krishnan, R.R., Sreedharan, R.S., Sudheer, S.K., Sudarsanakumar, C., Ganesan,
21. MahadevanPillai, V.P. 2015. Effect of Tantalum Doping on the Structural and Optical Properties of RF Magnetron Sputtered Indium Oxide Thin Films: Materials Science in Semiconductor Processing, Cilt. 37, s.
22. 1016/j.mssp.2015.02.033
23. Tarsa, E.J., English, J.H., Speck, J.S. 1993. Pulsed Laser Deposition of Oriented In2O3 on (0 0 1), InAs, MgO and Yttria‐Stabilized Zirconia: Appl. Phys. Lett., Cilt. 62, s. 2332‐2334. DOI: 10.1063/1.109408
24. Sheel, D.W., Gaskell, J.M. 2011. Deposition of Fluorine Doped Indium Oxide by Atmospheric Pressure
25. Deposition: Thin Solid Films, Cilt. 520,
26. 1016/j.tsf.2011.04.206
27. Vapour s. 1242–1245.
28. DOI: [14] Baqiah, H., Ibrahim, N.B., Abdi, M.H., Halim, Transport, Microstructure
29. and Optical Properties of Cr‐Doped In2O3 Thin Film Prepared by Sol–Gel Method: Journal of Alloys and Compounds, Cilt. 575, s. 198–206. DOI: 10.1016/j.jallcom.2013.04.089 [15] Prathap, P., Subbaiah, Y.P.V., Devika, M., Ramakrishna, Reddy, K.T. 2006. Optical Properties of In2O3 Films Prepared by Spray Pyrolysis: Materials Chemistry and Physics, Cilt. 100, s. 375–379. DOI: 10.1016/j.matchemphys.2006.01.01 6
30. Chopra, K.L., Major, S., Pandya, D.K. 1983. Transparent Conductors‐A Status Review: Thin Solid Films, Cilt.102, 10.1016/0040‐6090(83)90256‐0
31. Al‐Ani Salwan, K. Methods of Determining the Refractive Index of Thin Solid Films: Iraqi J. of Appl. Phys., Cilt. 4, s. 17‐23.
32. Manifacier, J.C., Gasiot, J., Fillard, J.P. 1967. A Simple Method for the Determination of the Optical Constants n, k and the Thickness of a Weakly Absorbing Thin Film: J. Phys. E, Cilt. 9, s. 1002‐1004. DOI: 10.1088/0022‐3735/9/11/032
33. Swanepoel, R. 1983. Determination of the Thickness and Optical Constants of Amorphous Silicon: J. Phys. E: Sci. Instrum., Cilt. 16, s. 1214‐1222. DOI: 10.1088/0022‐ 3735/16/12/023
34. Kushev, D.B., Zheleva, N.N. 1986. A New Method for the Determination of the Thickness, the Optical Constants and the Relaxation Time of Semiconducting
35. Infrared Phys., Cilt. 26, s. 385‐393. DOI: 0891(86)90063‐1 Absorbing Thin
36. Films: 10.1016/0020‐ [21] Epstein, K.A., Misemer,
37. D.K., Vernstrom, G.D. 1987. Optical Parameters
38. Semiconductors from Transmission and Reflection: Appl. Opt., Cilt. 26, s. 294‐299.
39. 1364/AO.26.000294
40. DOI: [22] Minkov, D.A. 1989. Method for Determining the Optical Constants of a Thin Film on a Transparent Substrate: J. Phys. D Appl. Phys., Cilt. 22, s. 199‐205. DOI: 10.1088/0022‐ 3727/22/1/029
41. Minkov, D.A. 1989. Calculation of the Optical Constants of a Thin Layer upon a Transparent Substrate from the Reflection Spectrum: J. Phys. D Appl. Phys., Cilt. 22, s. 1157‐ 1161.
42. 1016/j.tsf.2004.04.040
43. DOI: [24] Stichauer, L., Gavoille, D.G. 1992. A New Method for the Determination of the Optical Constants of Thin Films: Phys. Stat. Sol. (a), Cilt. 133, s. 547‐560.
44. 1002/pssa.2211330240
45. DOI: [25] Filippov, V.V., Kutavichyus, V.P. 2003. Accuracy of Determining the Optical Parameters of Thin Films by the Method of the Reflectance‐ Spectrum Extrema Envelopes: J. Appl. Spectrosc., Cilt. 70, s. 122‐129. DOI: 10.1023/A:1023288928882
46. Minkov, D.A. 1991. Computation of the Optical Constants of a Thin Dielectric Layer on a Transmitting Substrate from the Reflection Spectrum at Inclined Incidence of Light: J. Opt. Soc. Am. A, Cilt. 8, s. 306‐310.
47. 1364/JOSAA.8.000306
48. DOI: [27] Cullity, B.D., Stock, S.R. 2001. Elements of X‐ray Diffraction, 3rd edition, New Jersey, Prentice‐Hall, 388s.
49. Gan, J., Lu, X., Wu, J., Xie, S., Zhai, T., Yu, M., Zhang, Z., Mao, Y., Wang, S.C.I., Shen, Y., Tong, Y. 2012. Oxygen vacancies
50. photoelectrochemical performance of In2O3 nanocubes: Scientific Reports, Cilt. 3, s. 1021‐1027. DOI: 10.1038/srep01021
51. promoting [29] Zhu, H., Wang, X.L., Yang, F., Yang, X.R. 2008.
52. Template‐Free, Surfactantless Route to Fabricate In(OH)3, Nanoarchitectures
53. Conversion to In2O3: Cryst. Growth Des., Cilt. 8, s. 950–956. DOI: 10.1021/cg700850e
54. Their [30] Kaur, M., Jain, N., Sharma, K., Bhattacharya, S., Roy, M., Tyagi, A.K., Gupta, S.K., Yakhmi, J.V. 2008. Room‐Temperature H2S Gas Sensing at ppb Level by Single Crystal In2O
55. Whiskers: Sens. Actuators B, Cilt. 133,
56. 1016/j.snb.2008.03.003
57. DOI: [31] White, W.B., Keramidas, V.G. 1972. Vibrational Spectra of Oxides with the C‐Type Rare Earth Oxide Structure: Spectrochim. Acta A, Cilt. 28, s. 501‐509. DOI: 10.1016/0584‐ 8539(72)80237‐X
58. Rojas‐Lopez, M., Nieto‐Navarro, J., Rosendo, E., Navarro‐Contreras, H., Vidal, M.A. 2000. Raman Scattering Study of Photoluminescent Spark‐ processed Porous InP: Thin Solid Films,
59. 1016/S0040‐6090(00)01565‐0 1‐6.
60. DOI: [33] Korotcenkov, G., Brinzari, V., Ivanov, M., Cerneavschi, A., Rodriguez, J., Cirera, A., Cornet, A., Morante, J. 2005. Structural Stability of Indium Oxide Films Deposited By Spray Pyrolysis
61. Annealing: Thin Solid Films, Cilt. 479,
62. 1016/j.tsf.2004.11.107 Thermal s. 38‐51.
63. DOI: [34] Dong, H., Yang, H., Yang, W., Yin, W., Chen, D. 2008. Diameter‐Controlled Growth of In2O3 Nanowires on the Surfaces of Indium Grains: Materials Chemistry and Physics, Cilt. 107, s. 122–126.
64. 1016/j.matchemphys.2007.06.05 DOI: [35] Mardare, D., Rusu, G.I. 2002. The Influence of Heat Treatment on the Optical Properties of Titanium Oxide Thin Films: Materials Letters, Cilt.
65. 1016/S0167‐577X(02)00441‐X DOI: 3776‐3782.
66. DOI: [37] Kim, N.J., La, H.Y., Im, H.S., Ryu, K.B., 2010.
67. Properties of Fe‐TiO2 Thin Films Prepared by Sol‐Gel Dip Coating: Thin Solid Films, Cilt. 518, s. 156‐ 160. DOI: 10.1016/j.tsf.2010.03.093 [38] Pankove, J.I. 1975. Optical Processes in Semiconductors, New York: Dover, 448s.
68. Narasimha Rao, K., Kashyap, S. 2006.
69. Characterization of Indium Oxide and Indium Tin Oxide Films by Activated Reactive Evaporation: Surface Review and Letters, Cilt. 13, s.
70. 1142/S0218625X06008128
71. Beena, D., Lethy, K.J., Vinodkumar, R., Mahadevan Pillai, V.P., Ganesan, V., Phase, D.M., Sudheer, S.K. 2009. Effect of Substrate Temperature on Structural, Optical and Electrical Properties of Pulsed Laser Ablated Nanostructured
72. Films: Applied Surface Science, Cilt. 255,
73. 1016/j.apsusc.2009.05.057 DOI: [41] Reshmi Krishnan, R.,
74. Sreeja Sreedharan, R., Sudheer, S.K., Sudarsanakumar, C., Ganesan, V., Srinivasan, P., Mahadevan Pillai, V.P. 2015.
75. Temperature on Structural, Optical and Electrical Properties of Pulsed Laser
76. Indium Oxide Films: Materials Science
77. Processing, Cilt. 7, s. 112–122. DOI: 10.1016/j.mssp.2015.02.033 [42] Medenbach, O., Siritanon.
78. T., Subramanian, M.A., Shannon, R.D., Fischer, R.X., Rossman, G.R. 2013. Refractive
79. Dispersion of In2O3, InBO3 and Gahnite:
80. Bulletin, Cilt. 48, s. 2240–2243. DOI:10.1016/j.materresbull.2013.0 2.057 Optical Materials
81. Research [43] Ma, J‐H., Meng, X‐J., Sun, J‐L., Lin, T., Shi, F‐W., Chu, J‐H. 2005. Optical Properties of SrTiO3 Thin Films Prepared
82. Decomposition: Chin. Phys., Cilt. 14, s. 610‐614. DOI: 10.1088/1009‐ 1963/14/3/033
83. Metalorganic [44] Adachi, S. 1999. Optical Properties of Crystalline and Amorphous Semiconductors, Dordrecht: Kluwer, 261s.
84. Kittel, C. 1986. Introduction to Solid State Physics, 8th edition, New York: Wiley, 675s.
85. Hamberg, I., Granqvist, C. G. 1986. Evaporated Sn‐doped In2O3 films: Basic
86. Applications to Energy‐Efficient Windows: J. Appl. Phys., Cilt. 60, s. R123‐159. DOI: 10.1063/1.337534