TVA ile üretilen Cam / GaN / InGaN Filmin Artan Tavlama Sıcaklığının Bazı Fiziksel Özelliklerine Etkileri

Year 2020, Volume: 13 Issue: 1, 1 - 10, 20.03.2020

Erman Erdoğan

https://doi.org/10.18185/erzifbed.541448

Cited By: 1

Abstract

Bu çalışmada, GaN / InGaN yarı iletken filmler,
termiyonik vakum ark (TVA) yöntemi kullanılarak cam alttaş üzerine büyütüldü.
Üretilen filmlerin bazı fiziksel özelliklerini iyileştirmek için, farklı
sıcaklıklarda termal tavlama yapıldı ve tavlama sıcaklığının, filmlerin optik
ve yüzey özellikleri üzerindeki etkisi araştırıldı. UV-VIS spektrofotometresi
kullanılarak geçirgenlik ve soğurma spektrumları alınmış ve optik enerji bant
aralıkları belirlenmiştir. Filmlerin yüzey görüntüleri ve yüzey pürüzlülük değerleri,
atomik kuvvet mikroskopisi (AFM) kullanılarak elde edildi. Elde edilen
sonuçlara göre, GaN / InGaN filmlerin bazı fiziksel özellikleri termal tavlama
ile iyileştirilmiş ve bu filmler çeşitli teknolojik alanlarda kullanım için
araştırılmıştır.

Keywords

GaN/InGaN, Geçirgenlik, Bant aralığı, Atomik Kuvvet Mikroskobu (AFM), Termiyonik vakum ark (TVA), Tavlama.

The Effects of Increasing Annealing Temperature on Some Physical Properties of a Glass/GaN/InGaN Film produced with TVA

Abstract

In this
study, GaN/InGaN semiconductor films were deposited on glass substrate using
thermionic vacuum arc (TVA) method. In order to improve some physical
properties of the produced films, thermal annealing was performed at different
temperatures and the effect of annealing temperature on the optical and surface
properties of the films was investigated. Transmittance and absorption spectra
were taken using a UV-VIS spectrophotometer and optical band gap energies were
determined. The surface images and surface roughness values of the films were
obtained using atomic force microscopy (AFM). According to the results
obtained, some physical properties of GaN/InGaN films were improved by thermal
annealing and these films were investigated for use in various technological
fields.

Keywords

GaN/InGaN, Transmittance, Band gap, Atomic Force Microscope (AFM), Thermionic vacuum arc (TVA), Annealing

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