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Year 2014, Volume: 27 Issue: 3, 909 - 915, 04.04.2014
https://izlik.org/JA96RZ39KX

Abstract

References

  • E. H. Nicollian, J. R. Brews, MOS Physics and Technology, Wiley, New York, 1982).
  • S. M. Sze, Physics of Semiconductor Devices, 2nd Ed. Wiley, New York, 1981).
  • D. K. Schroder, Semiconductor Material and Device Characterization, 2nd Ed. Wiley, New York, (1998).
  • M. K. Hudait, S. B. Krupanidhi, Solid State Electron. 44, 1089 (2000).
  • A. Singh, K. C. Reinhardt, W. A. Anderson, J. Appl. Phys. 68, 3475 (1990).
  • A. Tataroğlu, Ş. Altındal, Vacuum 82, 1203 (2008).
  • O. Pakma, N. Serin, T. Serin, Ş. Altındal, J. Phys. D: Appl. Phys. 41, 215103 (2008).
  • S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, J. Alloys Compd. 583, 476 (2014).
  • H. C. Card, E. H. Rhoderick, J. Phys. D Appl. Phys. 4, 1589 (1971).
  • C. R. Crowell, S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
  • S. Kar, W. E. Dahlke, Solid State Electron. 15, 221 (1972).
  • S. Jeon, S. Park, Microelectron. Eng. 88, 872 (2011).
  • U. Kelberlau, R. Kassing, Solid State Electron. 22, 37 (1979). [14] P. Matheswaran, R. Saravanakumar, S. Velumani, Mater. Sci. Eng. B 174, 269 (2010). Sathyamoorthy, R.
  • S. Chand, J. Kumar, J. Appl. Phys. A 63, 171 (1996).
  • W. M. R. Divigalpitiya, Solar Energ. Mater. 18, 253 (1989).
  • J. W. Kim, J. W. Lee, Appl. Sur. Sci. 250, 247 (2005).
  • N. Kavasoğlu, C. Tozlu, O. Pakma, A. S. Kavasoğlu, S. Özden, B. Metin, Ö. Birgi, Ş. Oktik, Synthetic Met. 59, 1880 (2009).

Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements

Year 2014, Volume: 27 Issue: 3, 909 - 915, 04.04.2014
https://izlik.org/JA96RZ39KX

Abstract

Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency. The 1/C2-V curves are linear in the wide voltage region for each frequency. This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also, the barrier height (FB) and carrier (donor) concentration (ND) were obtained from C-2-V characteristics. The values of the ΦB and ND decrease with the increasing frequency.

References

  • E. H. Nicollian, J. R. Brews, MOS Physics and Technology, Wiley, New York, 1982).
  • S. M. Sze, Physics of Semiconductor Devices, 2nd Ed. Wiley, New York, 1981).
  • D. K. Schroder, Semiconductor Material and Device Characterization, 2nd Ed. Wiley, New York, (1998).
  • M. K. Hudait, S. B. Krupanidhi, Solid State Electron. 44, 1089 (2000).
  • A. Singh, K. C. Reinhardt, W. A. Anderson, J. Appl. Phys. 68, 3475 (1990).
  • A. Tataroğlu, Ş. Altındal, Vacuum 82, 1203 (2008).
  • O. Pakma, N. Serin, T. Serin, Ş. Altındal, J. Phys. D: Appl. Phys. 41, 215103 (2008).
  • S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, J. Alloys Compd. 583, 476 (2014).
  • H. C. Card, E. H. Rhoderick, J. Phys. D Appl. Phys. 4, 1589 (1971).
  • C. R. Crowell, S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
  • S. Kar, W. E. Dahlke, Solid State Electron. 15, 221 (1972).
  • S. Jeon, S. Park, Microelectron. Eng. 88, 872 (2011).
  • U. Kelberlau, R. Kassing, Solid State Electron. 22, 37 (1979). [14] P. Matheswaran, R. Saravanakumar, S. Velumani, Mater. Sci. Eng. B 174, 269 (2010). Sathyamoorthy, R.
  • S. Chand, J. Kumar, J. Appl. Phys. A 63, 171 (1996).
  • W. M. R. Divigalpitiya, Solar Energ. Mater. 18, 253 (1989).
  • J. W. Kim, J. W. Lee, Appl. Sur. Sci. 250, 247 (2005).
  • N. Kavasoğlu, C. Tozlu, O. Pakma, A. S. Kavasoğlu, S. Özden, B. Metin, Ö. Birgi, Ş. Oktik, Synthetic Met. 59, 1880 (2009).
There are 17 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Article
Authors

Adem Tataroğlu

G. Güven This is me

S. Yılmaz This is me

A. Büyükbaş This is me

Publication Date April 4, 2014
IZ https://izlik.org/JA96RZ39KX
Published in Issue Year 2014 Volume: 27 Issue: 3

Cite

APA Tataroğlu, A., Güven, G., Yılmaz, S., & Büyükbaş, A. (2014). Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science, 27(3), 909-915. https://izlik.org/JA96RZ39KX
AMA 1.Tataroğlu A, Güven G, Yılmaz S, Büyükbaş A. Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science. 2014;27(3):909-915. https://izlik.org/JA96RZ39KX
Chicago Tataroğlu, Adem, G. Güven, S. Yılmaz, and A. Büyükbaş. 2014. “Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-F and G ω-F Measurements”. Gazi University Journal of Science 27 (3): 909-15. https://izlik.org/JA96RZ39KX.
EndNote Tataroğlu A, Güven G, Yılmaz S, Büyükbaş A (August 1, 2014) Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science 27 3 909–915.
IEEE [1]A. Tataroğlu, G. Güven, S. Yılmaz, and A. Büyükbaş, “Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements”, Gazi University Journal of Science, vol. 27, no. 3, pp. 909–915, Aug. 2014, [Online]. Available: https://izlik.org/JA96RZ39KX
ISNAD Tataroğlu, Adem - Güven, G. - Yılmaz, S. - Büyükbaş, A. “Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-F and G ω-F Measurements”. Gazi University Journal of Science 27/3 (August 1, 2014): 909-915. https://izlik.org/JA96RZ39KX.
JAMA 1.Tataroğlu A, Güven G, Yılmaz S, Büyükbaş A. Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science. 2014;27:909–915.
MLA Tataroğlu, Adem, et al. “Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-F and G ω-F Measurements”. Gazi University Journal of Science, vol. 27, no. 3, Aug. 2014, pp. 909-15, https://izlik.org/JA96RZ39KX.
Vancouver 1.Adem Tataroğlu, G. Güven, S. Yılmaz, A. Büyükbaş. Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements. Gazi University Journal of Science [Internet]. 2014 Aug. 1;27(3):909-15. Available from: https://izlik.org/JA96RZ39KX