Galyum Miktarının Düşük Sıcaklıkta Üç Aşamalı Eş-Buharlaştırma ile Üretilen Cu(In1-xGax)(Se0.98Te0.02)2 İnce Film Güneş Pillerinin Diyot Özellikleri ve Güneş Pili Parametreleri Üzerine Etkisi

Year 2023, Volume: 11 Issue: 4, 1108 - 1115, 28.12.2023

Semih Ağca , Güven Çankaya

https://doi.org/10.29109/gujsc.1376986

Cited By: 1

Abstract

Bu çalışmada, x değerleri 0.17, 0.20, 0.23 ve 0.26 olan Cu(In1-xGax)(Se0.98Te0.02)2 ince film güneş hücreleri, düşük sıcaklıklarda üç aşamalı eş-buharlaştırma tekniği ile başarıyla üretildi. SLG/Mo/Cu(In1-xGax)(Se0.98Te0.02)2/CdS/ZnO/ITO/Ni-Al-Ni yapısına sahip ince film kalkopirit güneş hücrelerinin diyot özellikleri ve güneş hücresi parametreleri akım-gerilim ölçümleri ile incelendi. İdealite faktörü, seri direnç ve bariyer yüksekliği, oda sıcaklığında karanlıkta ölçülen akım-gerilim sonuçları kullanılarak Cheung-Cheung yöntemiyle elde edildi. İnce film güneş hücrelerinin açık devre gerilimi, kısa devre akım yoğunluğu, dolgu faktörü ve güç dönüşüm verimliliği, oda sıcaklığında AM1.5G standartlarında dört noktalı ölçüm düzeneği ile gerçekleştirilen akım-gerilim ölçümlerinden elde edilmiştir. Galyum içeriğindeki artışın önce idealite faktörünü azalttığı, ancak x değeri 0,23'ü geçtikten sonra tekrar arttırdığı tespit edilmiştir. Galyum miktarı artarken seri direnç değerlerinde dalgalanmalar gözlemlenmiştir. Bariyer yüksekliği galyum miktarının artmasıyla önce artmış, x değeri 0,23'ü geçtikten sonra azalmıştır. Güneş hücresi parametreleri x değerinin 0,23'e kadar artmasıyla artmış, bu noktanın aşılmasıyla azalmıştır. Diyot parametrelerinin birbirini etkilediği ancak en etkili diyot parametresinin idealite faktörü olduğu tespit edilmiştir. Cu(In1-xGax)(Se0.98Te0.02)2 ince film güneş hücrelerinin verimliliği, x değeri 0,17'den 0,23'e artırılarak %3,7'den %6,3'e çıkarılmıştır.

Keywords

İnce film, güneş hücresi, diyot özellikleri, galyum miktarı

Effect of Gallium Content on Diode Characteristics and Solar Cell Parameters of Cu(In1-xGax)(Se0.98Te0.02)2 Thin Film Solar Cells Produced by Three-stage Co-evaporation at Low Temperature

Abstract

In this study, Cu(In1-xGax)(Se0.98Te0.02)2 thin film solar cells with x values of 0.17, 0.20, 0.23, and 0.26 were successfully produced by three-stage co-evaporation technique at low temperatures. The diode characteristics and solar cell parameters of thin film chalcopyrite solar cells with the structure of SLG/Mo/Cu(In1-xGax)(Se0.98Te0.02)2/CdS/ZnO/ITO/Ni-Al-Ni were investigated by current-voltage measurements. The ideality factor, series resistance, and barrier height were obtained by the Cheung-Cheung method using the current-voltage results measured in the dark at room temperature. Open-circuit voltage, short-circuit current density, fill factor, and the power conversion efficiency of the thin film solar cells were derived from the current-voltage measurements realized by a four-point measurement setup under AM1.5G standards at room temperature. It was found that the increase in the gallium content first decreased the ideality factor, however, it increased again after exceeding the x value of 0.23. While the amount of gallium was increasing, fluctuations were observed in the series resistance values. The barrier height first increased with the increasing amount of gallium and decreased after exceeding the x value of 0.23. The solar cell parameters increased by increasing the x value up to 0.23 and decreased after exceeding this point. It was found that the diode parameters have an effect on each other but the most effective diode parameter was the ideality factor. The efficiency of the Cu(In1-xGax)(Se0.98Te0.02)2 thin film solar cells was increased from 3.7% to 6.3% by increasing the x value from 0.17 to 0.23.

Keywords

Thin film, solar cell, diode characteristics, gallium content

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