Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Abstract

We have fabricated, metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO₂/n-GaAs. Metal rectifying contacts were made by dc magnetron sputtering technique, and hafnium dioxide (HfO₂) interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon (ALD) technique. The series resistance value from the forward bias current-voltage (I-V) curves of 3 nm and 5 nm MIS structures very slightly has reduced with a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO₂ layer thickness. The barrier increment in the rectifying contacts is very important for an adequate barrier height in FET operation and is useful for the gates of the metal-semiconductor field-effect transistors or also show promise as small signal zero-bias rectifiers and microwave mixers.

Keywords

• Metal-Oxide-semiconductor structures,GaAs semiconductor,Hafnia HfO2,Atomic layer deposition (ALD) technique

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