EN
ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect
Abstract
ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect
Keywords
References
- Oana Y, Kotake H, Mukai N, and Ide K: Eectrical properties of polycrystalline silicon Mosfet’s on glass. J Appl Phys, 22, 493, (1983)
- T.I.Kamins: Hall mobility in chemically deposited polycrystalline silicon, J.Appl Phys.42, 4357, (1971)
- N.C.C.Lu, L.Gerzberg, J.D.Meindl, The effect of film thickness on the electrical properties of LPCVD polysilicon films. J Electrochem Soc. 131, 897, (1984)
- L.Mei, M.River, Y.K.Wark, R.W.Dutton, Grain growth mechanisms in polysilicon, J Electrochem Soc. 129, 1791, (1982)
- Y.Bourezig, H.Sehil, B.Zebentout, Z.Benamara, F.Raoult, O.Bonnaud, Solid State Phenomena 80-81 (2001)
- T.I.Kamins,Solid State Electronics ,789(1972)
- Warner J, Peisl M: exponential band tails in polycrystalline semiconductor films. Phys Rev. 31 6881, (1985)
- Sze SM: Physics of semiconductor Devices. Wiley edition New York 1981
Details
Primary Language
English
Subjects
-
Journal Section
-
Publication Date
January 2, 2012
Submission Date
January 2, 2012
Acceptance Date
-
Published in Issue
Year 2008 Volume: 8 Number: 2
APA
Bourezıg, Y., Bouabdallah, B., & Gaıffot, F. (2012). ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering, 8(2), 733-738. https://izlik.org/JA56BW99CR
AMA
1.Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. 2012;8(2):733-738. https://izlik.org/JA56BW99CR
Chicago
Bourezıg, Y., B. Bouabdallah, and F. Gaıffot. 2012. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering 8 (2): 733-38. https://izlik.org/JA56BW99CR.
EndNote
Bourezıg Y, Bouabdallah B, Gaıffot F (January 1, 2012) ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering 8 2 733–738.
IEEE
[1]Y. Bourezıg, B. Bouabdallah, and F. Gaıffot, “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect”, IU-Journal of Electrical & Electronics Engineering, vol. 8, no. 2, pp. 733–738, Jan. 2012, [Online]. Available: https://izlik.org/JA56BW99CR
ISNAD
Bourezıg, Y. - Bouabdallah, B. - Gaıffot, F. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering 8/2 (January 1, 2012): 733-738. https://izlik.org/JA56BW99CR.
JAMA
1.Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. 2012;8:733–738.
MLA
Bourezıg, Y., et al. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering, vol. 8, no. 2, Jan. 2012, pp. 733-8, https://izlik.org/JA56BW99CR.
Vancouver
1.Y. Bourezıg, B. Bouabdallah, F. Gaıffot. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering [Internet]. 2012 Jan. 1;8(2):733-8. Available from: https://izlik.org/JA56BW99CR