EN
ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect
Öz
ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect
Anahtar Kelimeler
Kaynakça
- Oana Y, Kotake H, Mukai N, and Ide K: Eectrical properties of polycrystalline silicon Mosfet’s on glass. J Appl Phys, 22, 493, (1983)
- T.I.Kamins: Hall mobility in chemically deposited polycrystalline silicon, J.Appl Phys.42, 4357, (1971)
- N.C.C.Lu, L.Gerzberg, J.D.Meindl, The effect of film thickness on the electrical properties of LPCVD polysilicon films. J Electrochem Soc. 131, 897, (1984)
- L.Mei, M.River, Y.K.Wark, R.W.Dutton, Grain growth mechanisms in polysilicon, J Electrochem Soc. 129, 1791, (1982)
- Y.Bourezig, H.Sehil, B.Zebentout, Z.Benamara, F.Raoult, O.Bonnaud, Solid State Phenomena 80-81 (2001)
- T.I.Kamins,Solid State Electronics ,789(1972)
- Warner J, Peisl M: exponential band tails in polycrystalline semiconductor films. Phys Rev. 31 6881, (1985)
- Sze SM: Physics of semiconductor Devices. Wiley edition New York 1981
Ayrıntılar
Birincil Dil
İngilizce
Konular
-
Bölüm
-
Yayımlanma Tarihi
2 Ocak 2012
Gönderilme Tarihi
2 Ocak 2012
Kabul Tarihi
-
Yayımlandığı Sayı
Yıl 2008 Cilt: 8 Sayı: 2
APA
Bourezıg, Y., Bouabdallah, B., & Gaıffot, F. (2012). ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering, 8(2), 733-738. https://izlik.org/JA56BW99CR
AMA
1.Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. 2012;8(2):733-738. https://izlik.org/JA56BW99CR
Chicago
Bourezıg, Y., B. Bouabdallah, ve F. Gaıffot. 2012. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect”. IU-Journal of Electrical & Electronics Engineering 8 (2): 733-38. https://izlik.org/JA56BW99CR.
EndNote
Bourezıg Y, Bouabdallah B, Gaıffot F (01 Ocak 2012) ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering 8 2 733–738.
IEEE
[1]Y. Bourezıg, B. Bouabdallah, ve F. Gaıffot, “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect”, IU-Journal of Electrical & Electronics Engineering, c. 8, sy 2, ss. 733–738, Oca. 2012, [çevrimiçi]. Erişim adresi: https://izlik.org/JA56BW99CR
ISNAD
Bourezıg, Y. - Bouabdallah, B. - Gaıffot, F. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect”. IU-Journal of Electrical & Electronics Engineering 8/2 (01 Ocak 2012): 733-738. https://izlik.org/JA56BW99CR.
JAMA
1.Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. 2012;8:733–738.
MLA
Bourezıg, Y., vd. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect”. IU-Journal of Electrical & Electronics Engineering, c. 8, sy 2, Ocak 2012, ss. 733-8, https://izlik.org/JA56BW99CR.
Vancouver
1.Y. Bourezıg, B. Bouabdallah, F. Gaıffot. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering [Internet]. 01 Ocak 2012;8(2):733-8. Erişim adresi: https://izlik.org/JA56BW99CR