The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Year 2016, Volume: 6 Issue: 3, 57 - 67, 30.09.2016

İkram Orak Adem Koçyiğit

Abstract

Metal-Insulator-semiconductor contacts (MIS) have been studied its importance in
electronic and optoelectronic. Their importance comes from its so high dielectric constant, storage layer
property and effect of capacitance. For this reason, Si3N4 were deposited with PECVD technique on
p-type Si about 5 nm thickness layers. The thicknesses of Si3N4 were measured with an elipsometre and
obtained MIS contact with Al contact. It was researched the insulator layer effect on the Al/p-Si contact.
Its electrical characterizations were inquired by use of the forward and reverse bias I-V, C–V and G-V
measurements and were seen that the insulator Si
3N4 layer influenced characterizations of the contact.
Effect of the interface states (Nss), the series resistance (Rs) and the other some electrical parameters
were investigated by calculating from I-V and C–V measurements. It was observed that from the C-V
characterizations at 500 kHz dual, contact behaved similarly memristor structure.  

Keywords

Al/Si3N4/p-Si, capacitance behavior, metal-insulator-semiconductor structure, Schottky diode

Metal ve Yarıiletken Arasındaki Yalıtkan Tabakanın Elektriksel karakterizasyon Etkisi

Abstract

Metal-yalıtkan-yarıiletken (MIS) aygıtlar elektronik ve optoelektronikteki önemlerinden
dolayı çalışılmaktadır. Bu önem aygıtların yüksek dielektrik sabitine, depolama tabakası ve kapasitans
özelliklerine sahip olmalarından kaynaklanmaktadır. Bu yüzden Si3N4 tabakası p-tipi Si üzerine
PECVD tekniği kullanılarak büyütülmüş, kalınlığı elipsometre ile 5 nm olarak ölçülmüştür ve Al
kontak sayesinde MIS yapısı elde edilmiştir. Elde edilen Al/p-Si yapısı üzerine Si3N4 tabakasının etkisi
araştırılmıştır. Bunun için aygıtın elektrik karakterizasyonları ileri ve ters beslem I-V, C–V ve G-V
ölçümleriyle yapılmış ve yalıtkan Si3N4 tabakanın diyot özelliklerini oldukça etkilediği görülmüştür. Ara
yüzey halleri (Nss), seri direnç (Rs) ve diğer bazı elektriksel parametrelerin aygıt üzerine etkileri I-V
ve C–V ölçümlerinden hesaplanarak araştırılmıştır. C-V ölçümlerinden aygıtın memristör bir yapı gibi
davrandığı tespit edilmiştir  

Keywords

Al/Si 3N4/p-Si, kapasitör özelliği, metal-yalıtkan-yarıiletken yapılar, Schottky diyot

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