TiO2 Ara Katmanlı Si-Tabanlı Heteroeklemin Dielektrik Karakterizasyonu

Year 2018, Volume: 8 Issue: 3, 119 - 129, 30.09.2018

Abdulkerim Karabulut

Abstract

Bu çalışmada, Al/TiO2/p-Si/Al heteroeklemi üretildi ve bazı elektrik ve dielektrik karakteristikleri

araştırıldı. TiO2 arayüzey katmanının sentezlenmesi için yüzey düzgünlüğü ve kararlılığı gibi sahip olduğu bazı

avantajlardan dolayı atomik katman kaplama tekniği kullanıldı. Elektriksel ve dielektrik karakteristiklerinin

belirlenmesi için, oda sıcaklığında, -1 ile +1 V beslem voltajı ve 10 kHz-1MHz frekans değerleri aralıklarında

empedans spektroskopisi ölçümleri yapılmıştır. Elektriksel parametreler olarak arayüzey halleri dağılımı ve seri

direnç değerleri belirlenmiştir. Bunlara ek olarak, dielektrik kaybı ve katsayısı, elektriksel modülün gerçek ve

imajiner kısmı ve AC elektrik iletkenliği gibi dielektrik parametrelerin frekansa ve voltaja güçlü bir şekilde bağlı

olduğu bulunmuştur. Elektrik ve dilelektrik karakteristikler üretilen aygıtın arayüzey halleri ve polarizasyon

değerlerinin düşük frekanslarda AC sinyalini takip edebildiğini göstermektedir.

Keywords

Dielektrik özellikler, TiO2, MIS yapı, atomik katman kaplama (ALD), atomik katman kaplama (ALD)

Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer

Abstract

In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectric

characteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the some

advantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics,

impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHz

frequency range at room temperature. As an electrical parameters, interface states distribution and series resistance

values was determined. In addition to these, it is found that the dielectric properties such as dielectric loss and

constant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values was

depended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface states

and polarization values of fabricated device can follow AC signal at low frequency values.

Keywords

Dielectric properties, TiO2, MIS structure, atomic layer deposition (ALD), atomic layer deposition (ALD)

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