Research Article
BibTex RIS Cite

Tiyosemikarbazon ve Rodanin Türevlerinin Katalizörsüz Sentezi ve Onların Schottky Diyot Uygulamaları

Year 2019, Volume: 9 Issue: 3, 1367 - 1376, 01.09.2019
https://doi.org/10.21597/jist.534846

Abstract

Bu çalışmada, Bis(TSC)-Ph ve yeni Bis(Rh)-Ph organik malzemeleri sentezlendi ve diyot uygulamaları için arayüzey elemanı olarak kullanıldı. Al/Bis(TSC)-Ph/p-Si ve Al/ Bis(Rh)-Ph/p-Si Schottky diyotları termal buharlaştırma ve döndürme metodları ile fabrikasyonları yapıldı. Oda sıcaklığında 30kHz ile 5MHz aralığında çeşitli frekanslarda kapasitans-voltaj (C-V) ve kondüktans-voltaj (G-V) ölçümleri kullanılarak elektriksel parametreler incelendi. Aygıt performansında frekansın etkisi incelendi ve her bir diyot için karşılaştırıldı. Akseptör konsantrasyonu (Na), arayüzey durumları (Nss), Fermi seviyesi (Ef) ve bariyer yüksekliği (Φb) gibi bazı temel parametreler C-2-V ölçümlerinden hesaplandı. Bu sonuçlara göre, beklendiği gibi, rodanin grubunu içeren Bis (Rh)-Ph organik katmanının C-V ve G-V performansları için Bis (TSC)-Ph'den daha uygun olduğu tespit edilmiştir.

References

  • Aksoy S, Caglar Y, 2012. Effect of Ambient Temperature on Electrical Properties of Nanostructure N-ZnO / p-Si Heterojunction Diode. Superlattices and Microstructures, 51(5), 613–25.
  • Bilkan C, Zeyrek S, San SE, Altindal S, 2015. A Compare of Electrical Characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) Type Diodes Using Current-Voltage (I-V) and Capacitance-Voltage (C-V) Measurements, Materials Science in Semiconductor Processing, 32, 137–44.
  • Cifci OS, Kocyigit A, Sun P, 2018. Perovskite/p-Si Photodiode with Ultra-Thin Metal Cathode. Superlattices and Microstructures, 120, 492–500.
  • Güclü ÇŞ,Ozdemir AF, Karabulut A, Kökçe A, Altindal Ş, 2019. Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs). Materials Science in Semiconductor Processing, 89,26-31.
  • Gülcin ED, Yücedag I, Yashar AK, Altındal Ş, 2018. Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures. Journal of Electronic Materials, 47,11.
  • Kaçus H, Aydoğan Ş, Ekinci D, Kurudirek SV, Türüt A, 2015. Optical Absorption of the Anthracene and Temperature-Dependent Capacitance–voltage Characteristics of the Au/Anthracene/n-Si Heterojunction in Metal–organic-Semiconductor Configuration. Physica E: Low-Dimensional Systems and Nanostructures, 74, 505–09.
  • Karabulut A, 2019. Barrier height modification in Au/Ti/n-GaAs devices with a HfO2 interfacial layer formed by atomic layer deposition. Bulletin of Materials Science, 42,5.
  • Karabulut A, Orak I, Canlı S, Yıldırım N, Turut A, 2018.Temperature-Dependent Electrical Characteristics of Alq3/p-Si Heterojunction. Physica B: Condensed Matter, 550, 68–74.
  • Kaya A, Marıl E, Altındal S, Uslu I, 2016. The Comparative Electrical Characteristics of Au/n-Si (MS) Diodes with and without a 2% Graphene Cobalt-Doped Ca3Co4Ga0.001Ox Interfacial Layer at Room Temperature. Microelectronic Engineering, 149,166–71.
  • Liu J, Yi W, Wan Y, Ma L, Song H, 2008. 1-(1-Arylethylidene)Thiosemicarbazide Derivatives: A New Class of Tyrosinase Inhibitors. Bioorganic and Medicinal Chemistry, 16, 1096-1102.
  • Majumdar M S, Chattopadhyay S, Banerji P, 2009. Electrical Characterization of P-ZnO / p-Si Heterojunction. Applied Surface Science, 255, 6141–44.
  • Orak I, Urel M, Bakan G, Dâna A, 2015.Memristive Behavior in a Junctionless Flash Memory Cell. Applied Physics Letters, 233506,2–7.
  • Oruc FB, Aygun LE, Donmez I, Biyikli N, Okyay AK, 2015. Low Temperature Atomic Layer Deposited ZnO Photo Thin Film Transistors. Journal of Vacuum Science & Technology A, 33, 01A105.
  • Padma R, Sreenu K, Reddy VR, 2017. Electrical and Frequency Dependence Characteristics of Ti/Polyethylene Oxide (PEO)/p-Type InP Organic-Inorganic Schottky Junction. Journal of Alloys and Compounds, 695, 2587–96
  • Tanrıkulu EE, Demirezen S, Altındal S, Uslu I, 2018. On the Anomalous Peak and Negative Capacitance in the Capacitance–voltage (C–V) Plots of Al/(%7 Zn-PVA)/p-Si (MPS) Structure.” Journal of Materials Science: Materials in Electronics, 29(4),2890–98.

Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications

Year 2019, Volume: 9 Issue: 3, 1367 - 1376, 01.09.2019
https://doi.org/10.21597/jist.534846

Abstract

In the present study, organic materials Bis(TSC)-Ph and novel Bis(Rh)-Ph were synthesized and used such as interfacial layer for diode applications. Al/ Bis(TSC)-Ph/p type Si and Al/ Bis(Rh)-Ph/p type Si Schottky diodes were fabricated with spin coating and thermal evaporation methods. The electrical parameters were investigated by using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at various frequencies from 30 kHz to 5 Mhz at room temperature. The effect of frequency on device performance was examined and compared with each other. The some basically parameters such as acceptor concentration (Na), interface states (Nss), Fermi level (Ef) and barrier height (𝛷𝐵) were also calculated from C-2-V measurements. According to these results, as expected, it was determined that Bis(Rh)-Ph organic layer, which is containing the rhodanine group, is more suitable than Bis(TSC)-Ph for C-V and G-V performances.

References

  • Aksoy S, Caglar Y, 2012. Effect of Ambient Temperature on Electrical Properties of Nanostructure N-ZnO / p-Si Heterojunction Diode. Superlattices and Microstructures, 51(5), 613–25.
  • Bilkan C, Zeyrek S, San SE, Altindal S, 2015. A Compare of Electrical Characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) Type Diodes Using Current-Voltage (I-V) and Capacitance-Voltage (C-V) Measurements, Materials Science in Semiconductor Processing, 32, 137–44.
  • Cifci OS, Kocyigit A, Sun P, 2018. Perovskite/p-Si Photodiode with Ultra-Thin Metal Cathode. Superlattices and Microstructures, 120, 492–500.
  • Güclü ÇŞ,Ozdemir AF, Karabulut A, Kökçe A, Altindal Ş, 2019. Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs). Materials Science in Semiconductor Processing, 89,26-31.
  • Gülcin ED, Yücedag I, Yashar AK, Altındal Ş, 2018. Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures. Journal of Electronic Materials, 47,11.
  • Kaçus H, Aydoğan Ş, Ekinci D, Kurudirek SV, Türüt A, 2015. Optical Absorption of the Anthracene and Temperature-Dependent Capacitance–voltage Characteristics of the Au/Anthracene/n-Si Heterojunction in Metal–organic-Semiconductor Configuration. Physica E: Low-Dimensional Systems and Nanostructures, 74, 505–09.
  • Karabulut A, 2019. Barrier height modification in Au/Ti/n-GaAs devices with a HfO2 interfacial layer formed by atomic layer deposition. Bulletin of Materials Science, 42,5.
  • Karabulut A, Orak I, Canlı S, Yıldırım N, Turut A, 2018.Temperature-Dependent Electrical Characteristics of Alq3/p-Si Heterojunction. Physica B: Condensed Matter, 550, 68–74.
  • Kaya A, Marıl E, Altındal S, Uslu I, 2016. The Comparative Electrical Characteristics of Au/n-Si (MS) Diodes with and without a 2% Graphene Cobalt-Doped Ca3Co4Ga0.001Ox Interfacial Layer at Room Temperature. Microelectronic Engineering, 149,166–71.
  • Liu J, Yi W, Wan Y, Ma L, Song H, 2008. 1-(1-Arylethylidene)Thiosemicarbazide Derivatives: A New Class of Tyrosinase Inhibitors. Bioorganic and Medicinal Chemistry, 16, 1096-1102.
  • Majumdar M S, Chattopadhyay S, Banerji P, 2009. Electrical Characterization of P-ZnO / p-Si Heterojunction. Applied Surface Science, 255, 6141–44.
  • Orak I, Urel M, Bakan G, Dâna A, 2015.Memristive Behavior in a Junctionless Flash Memory Cell. Applied Physics Letters, 233506,2–7.
  • Oruc FB, Aygun LE, Donmez I, Biyikli N, Okyay AK, 2015. Low Temperature Atomic Layer Deposited ZnO Photo Thin Film Transistors. Journal of Vacuum Science & Technology A, 33, 01A105.
  • Padma R, Sreenu K, Reddy VR, 2017. Electrical and Frequency Dependence Characteristics of Ti/Polyethylene Oxide (PEO)/p-Type InP Organic-Inorganic Schottky Junction. Journal of Alloys and Compounds, 695, 2587–96
  • Tanrıkulu EE, Demirezen S, Altındal S, Uslu I, 2018. On the Anomalous Peak and Negative Capacitance in the Capacitance–voltage (C–V) Plots of Al/(%7 Zn-PVA)/p-Si (MPS) Structure.” Journal of Materials Science: Materials in Electronics, 29(4),2890–98.
There are 15 citations in total.

Details

Primary Language English
Subjects Metrology, Applied and Industrial Physics
Journal Section Fizik / Physics
Authors

Sinan Bayındır This is me 0000-0002-7845-4497

Mehmet Akif Şahinkaya This is me 0000-0001-6461-8959

İkram Orak 0000-0003-2318-9718

Publication Date September 1, 2019
Submission Date March 3, 2019
Acceptance Date April 8, 2019
Published in Issue Year 2019 Volume: 9 Issue: 3

Cite

APA Bayındır, S., Şahinkaya, M. A., & Orak, İ. (2019). Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. Journal of the Institute of Science and Technology, 9(3), 1367-1376. https://doi.org/10.21597/jist.534846
AMA Bayındır S, Şahinkaya MA, Orak İ. Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. J. Inst. Sci. and Tech. September 2019;9(3):1367-1376. doi:10.21597/jist.534846
Chicago Bayındır, Sinan, Mehmet Akif Şahinkaya, and İkram Orak. “Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine Derivatives and Their Schottky Diode Applications”. Journal of the Institute of Science and Technology 9, no. 3 (September 2019): 1367-76. https://doi.org/10.21597/jist.534846.
EndNote Bayındır S, Şahinkaya MA, Orak İ (September 1, 2019) Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. Journal of the Institute of Science and Technology 9 3 1367–1376.
IEEE S. Bayındır, M. A. Şahinkaya, and İ. Orak, “Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications”, J. Inst. Sci. and Tech., vol. 9, no. 3, pp. 1367–1376, 2019, doi: 10.21597/jist.534846.
ISNAD Bayındır, Sinan et al. “Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine Derivatives and Their Schottky Diode Applications”. Journal of the Institute of Science and Technology 9/3 (September 2019), 1367-1376. https://doi.org/10.21597/jist.534846.
JAMA Bayındır S, Şahinkaya MA, Orak İ. Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. J. Inst. Sci. and Tech. 2019;9:1367–1376.
MLA Bayındır, Sinan et al. “Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine Derivatives and Their Schottky Diode Applications”. Journal of the Institute of Science and Technology, vol. 9, no. 3, 2019, pp. 1367-76, doi:10.21597/jist.534846.
Vancouver Bayındır S, Şahinkaya MA, Orak İ. Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. J. Inst. Sci. and Tech. 2019;9(3):1367-76.