Dağıtılmış Alt Bragg Dielektrik Yansıtıcılı Işık Yayan Diyot

Year 2020, Volume: 10 Issue: 4, 2559 - 2564, 15.12.2020

Fahrettin Sarcan

https://doi.org/10.21597/jist.746002

Abstract

Bu çalışmada alt Bragg yansıtıcısına sahip yakın kızılötesi bölgede ışıma yapan p-i-n diyotun tasarımı, fabrikasyon detayları ve elektro-optik özellikleri incelenmektedir. İncelenen ışık yayan aygıtın aktif ışıma bölgesi 20 adet GaInNAs/GaNAs (7 nm /13 nm) kuantum kuyusu sisteminden oluşmaktadır. Alt dielektrik aynası ise 15 adet GaAs/AlAs Bragg yansıtıcı çiftlerinin üst üste tabakasal olarak büyütülmesinden oluşmaktır. Aygıtın ışıma merkez dalgaboyu 1310 nm olup, spektral yarı genişliği 14.4 nm’dir. Işıma eşik akımı 20 nA olan aygıtın, 200 mA sürülen akım varlığında maksimum ışıma gücü 38 mW’dır. Bu çalışmada, yakın kızılötesi bölgede ışıma yapan aygıt üretilmesinin ve karakterize edilmesinin yanı sıra sadece alt Bragg yansıtıcı kullanılarak bile geleneksel ışık yayan diyotlara göre ışıma spektral genişliğinin ve ışıma profilinin iyileştirilebileceğini gösterilmiştir.

Keywords

kızılötesi, ışık yayan diyot, dielektrik ayna, Dağıtılmış Bragg Yansıtıcısı

Supporting Institution

İstanbul Üniversitesi Bilimsel Araştırma Projeleri Koordinasyon Birimi

Project Number

FBA-2018-32506

Thanks

Bu çalışma, İstanbul Üniversitesi Bilimsel Araştırma Projeleri Koordinasyon Birimi (Proje Kodu: FBA-2018-32506) tarafından desteklenmiştir. Değerli yorumları için Prof. Dr. Ayşe Erol’a ve ışıma gücü ölçümlerinin gerçekleştirilmesi için laboratuvarının olanaklarını kullanmamı sağlayan York Üniversitesi’nden Dr. Yue Wang’a teşekkür ederim.

A quasi-cavity enhanced Light Emitting Diode

Abstract

In this letter, design details and electro-optical properties of an infrared light emitting diode enhanced with a quasi-cavity structure have been reported. The quasi-cavity structure was formed with a bottom dielectric film stack. The investigated light emitting diode consists of 7 nm 20 GaInNAs/GaNAs quantum wells with 15 pairs of GaAs/AlAs Bragg Reflectors to form a quasi-cavity. The emission wavelength of the device is in between 1295 and 1325 nm with a centre wavelength of 1310 nm. The spectral linewidth is 14.4 nm. The threshold operation current of the device is 20 nA, and the maximum emission power of 38 mW is obtained under the injection current of 200 mA. It is demonstrated that using a quasi-cavity design formed by only a bottom reflector structure improve the directionality of the emission and decreases the linewidth of the infrared light emitting diode, compared with an ordinary infrared light emitting diode structure.

Keywords

Distributed Bragg reflectors, infrared, light emitting diode, dielectric mirror

Project Number

FBA-2018-32506

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