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Electrical Characterization of CdO Based Au/p-Si Rectifier

Year 2021, Volume: 11 Issue: 2, 1050 - 1057, 01.06.2021

Mehmet Yılmaz

https://doi.org/10.21597/jist.858524

Abstract

Cadmium oxide (CdO) film was developed using a chemical spray pyrolysis technique on the p-type silicon (p-Si) substrate. The solution of the CdO was obtained by dissolving cadmium acetate salt in a mixture of distilled water and methanol. High-quality Au and Al contacts were evaporated on the polished and unpolished side of p-Si, respectively to create 4Au/CdO/p-Si/Al device architecture. In this context, four Au/CdO/p-Si/Al devices that were arbitrarily favored were analyzed and compared in depth. Current-Voltage (I-V) measurements were carried out to find out the performance of the CdO interlayer in the Au/p-Si device. The obtained data were analyzed using the Thermionic emission theory, Norde, and Cheung approach. Results indicated that CdO films grown by simple chemical spray pyrolysis technique could be used as barrier modifiers in Au/p-Si rectifier device.

Keywords

CdO Spray pyrolysis Schottky Junction rectifier

Thanks

The author would like to thanks Dr.H.Kacus and A.Ozmen for their valuable contribution to this study.

References

  • Afify HH, Ahmed NM, Tadros MY, Ibrahim FM, 2014. Temperature dependence growth of CdO thin film prepared by spray pyrolysis. Journal of Electrical Systems and Information Technology, 1(2), pp:119–128. doi: 10.1016/j.jesit.2014.07.001
  • Akinn Ü, Yüksel ÖF, Pakma O, Koralay H, Cavdar S, Tugluoglu N, 2019. A Novel Device Behavior Of Al / Coronene / n-GaAs / In Organic Based Schottky Barrier Diode. New Materials, Compounds and Applications, pp:15–22.
  • Bagal VS, Patil GP, Deore AB, Suryawanshi SR, Late DJ, More MA, Chavan PG, 2016. Surface modification of aligned CdO nanosheets and their enhanced field emission properties. RSC Advances, 6(47), pp:41261–41267. doi: 10.1039/C5RA28000A
  • Ferro R, 1999. Some physical properties of F-doped CdO thin films deposited by spray pyrolysis. Thin Solid Films, 347(1–2), pp:295–298. doi: 10.1016/S0040-6090(99)00006-1
  • Grilli ML, Aydogan S, Yilmaz M, 2016. A study on non-stoichiometric p-NiOx/n-Si heterojunction diode fabricated by RF sputtering: Determination of diode parameters. Superlattices and Microstructures, 100, pp:924–933. doi: 10.1016/j.spmi.2016.10.059
  • Gupta RK, Ghosh K, Kahol, PK, 2009a. Fabrication and electrical characterization of Au/p-Si/STO/Au contact. Current Applied Physics, 9(5), pp:933–936. doi: 10.1016/j.cap.2008.09.007
  • Gupta RK, Ghosh K, Kahol PK, 2009b. Fabrication and electrical characterization of Schottky diode based on 2-amino-4, 5-imidazoledicarbonitrile (AIDCN). Physica E: Low-Dimensional Systems and Nanostructures, 41(10), pp:1832–1834. doi: 10.1016/j.physe.2009.07.009
  • Gupta RK, Ghosh K, Patel R, Mishra SR, Kahol PK, 2008. Structural, optical and electrical properties of In doped CdO thin films for optoelectronic applications. Materials Letters, 62(19), pp:3373–3375. doi: 10.1016/j.matlet.2008.03.015
  • Jin S, Yang Y, Medvedeva JE, Ireland JR, Metz AW, Ni J, Kannewurf CR, Freeman AJ, Marks TJ, 2004. Dopant Ion Size and Electronic Structure Effects on Transparent Conducting Oxides. Sc-Doped CdO Thin Films Grown by MOCVD. Journal of the American Chemical Society, 126(42), pp:13787–13793. doi: 10.1021/ja0467925
  • Karataş Ş, Altındal Ş, Türüt A, Çakar, M, 2007. Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements. Physica B: Condensed Matter, 392(1–2), pp:43–50. doi: 10.1016/j.physb.2006.10.039
  • Karataş Ş, Altındal Ş, Türüt A, Özmen A, 2003. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts. Applied Surface Science, 217(1–4), pp:250–260. doi: 10.1016/S0169-4332(03)00564-6
  • Kern W, 1990. The Evolution of Silicon Wafer Cleaning Technology. Journal of The Electrochemical Society, 137(6), pp:1887–1892. doi: 10.1149/1.2086825
  • Khodai ZT, Abdulmunem Ibrahim B, Kaream Hassan M, 2020. Investigation on the structural and optical properties of copper doped NiO nanostructures thin films. Materials Today: Proceedings, 20, pp:560–565. doi: 10.1016/j.matpr.2019.09.189
  • Kocyigit A, Yılmaz M, Aydoğan Ş, İncekara Ü, 2019. The effect of measurements and layer coating homogeneity of AB on the Al/AB/p-Si devices. Journal of Alloys and Compounds, 790, pp:388–396. doi: 10.1016/j.jallcom.2019.03.179
  • Lien CD, So FCT, Nicolet MA, 1984. An improved forward I-V method for nonideal Schottky diodes with high series resistance. IEEE Transactions on Electron Devices, 31(10), pp:1502–1503. doi: 10.1109/T-ED.1984.21739
  • Mahesh D, Kumar MCS, 2020. Synergetic effects of aluminium and indium dopants in the physical properties of ZnO thin films via spray pyrolysis. Superlattices and Microstructures, 142, p:106511. doi: 10.1016/j.spmi.2020.106511
  • Menazea AA, Mostafa AM, Al-Ashkar EA, 2020. Impact of CuO doping on the properties of CdO thin films on the catalytic degradation by using pulsed-Laser deposition technique. Optical Materials, 100, p:109663. doi: 10.1016/j.optmat.2020.109663
  • Murthy LCS, Rao KSRK, 1999. Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method. Bulletin of Materials Science, 22(6), pp:953–957. doi: 10.1007/BF02745685
  • Ocak YS, Kulakci M, Kılıçoğlu T, Turan R, Akkılıç K, 2009. Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode. Synthetic Metals, 159(15–16), pp:1603–1607. doi: 10.1016/j.synthmet.2009.04.024
  • Sağlam M, Biber M, Çakar M, Türüt A, 2004. The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure. Applied Surface Science, 230(1–4), pp:404–410. doi: 10.1016/j.apsusc.2004.03.003
  • Saha B, Thapa R, Chattopadhyay KK, 2008. Wide range tuning of electrical conductivity of RF sputtered CdO thin films through oxygen partial pressure variation. Solar Energy Materials and Solar Cells, 92(9), pp:1077–1080. doi: 10.1016/j.solmat.2008.03.024
  • Sankarasubramanian K, Soundarrajan P, Sethuraman K, Ramamurthi K, 2015. Chemical spray pyrolysis deposition of transparent and conducting Fe doped CdO thin films for ethanol sensor. Materials Science in Semiconductor Processing, 40, pp:879–884. doi: 10.1016/j.mssp.2015.07.090
  • Singh BK, Tripathi S, 2015. Fabrication and characterization of Au/p-ZnO Schottky contacts. Superlattices and Microstructures, 85, pp:697–706. doi: 10.1016/j.spmi.2015.06.038
  • Soylu M, Girtan M, Yakuphanoglu F, 2012. Properties of PEDOT:PEG/ZnO/p-Si heterojunction diode. Materials Science and Engineering: B, 177(11), pp:785–790. doi: 10.1016/j.mseb.2012.03.025
  • Tataroğlu A, Altındal Ş, 2009. The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics. Journal of Alloys and Compounds, 484(1–2), pp:405–409. doi: 10.1016/j.jallcom.2009.04.119
  • Turgut G, Aydogan S, Yilmaz M, Özmen A, Kacus H, 2021. An Investigation of Spray Deposited CdO Films and CdO/p-Si Heterojunction at Different Substrate Temperatures. JOM. doi: 10.1007/s11837-020-04514-9
  • Wang Q, Zhao Z, Li H, Zhuang J, Ma Z, Yang Y, Zhang L, Zhang Y, 2018. One-step RF magnetron sputtering method for preparing Cu(In, Ga)Se2 solar cells. Journal of Materials Science: Materials in Electronics, 29(14), pp:11755–11762. doi: 10.1007/s10854-018-9274-y
  • Yeganeh MA, Rahmatollahpur S, Sadighi-Bonabi R, Mamedov R, 2010. Dependency of barrier height and ideality factor on identically produced small Au/p-Si Schottky barrier diodes. Physica B: Condensed Matter, 405(16), pp:3253–3258. doi: 10.1016/j.physb.2010.04.055
  • Yilmaz M, 2019. A function of external doping: Characteristics of inorganic nanostructure based diode. Ceramics International, 45(1), pp:665–673. doi: 10.1016/j.ceramint.2018.09.226
  • Yıldırım M, 2019. Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters. Journal of Alloys and Compounds, 773, pp:890–904. doi: 10.1016/j.jallcom.2018.09.276
  • Ylä-Mella J, Pongrácz E, 2016. Drivers and Constraints of Critical Materials Recycling: The Case of Indium. Resources, 5(4), p:34. doi: 10.3390/resources5040034

Electrical Characterization of CdO Based Au/p-Si Rectifier

Year 2021, Volume: 11 Issue: 2, 1050 - 1057, 01.06.2021

Mehmet Yılmaz

https://doi.org/10.21597/jist.858524

Abstract

Cadmium oxide (CdO) film was developed using a chemical spray pyrolysis technique on the p-type silicon (p-Si) substrate. The solution of the CdO was obtained by dissolving cadmium acetate salt in a mixture of distilled water and methanol. High-quality Au and Al contacts were evaporated on the polished and unpolished side of p-Si, respectively to create 4Au/CdO/p-Si/Al device architecture. In this context, four Au/CdO/p-Si/Al devices that were arbitrarily favored were analyzed and compared in depth. Current-Voltage (I-V) measurements were carried out to find out the performance of the CdO interlayer in the Au/p-Si device. The obtained data were analyzed using the Thermionic emission theory, Norde, and Cheung approach. Results indicated that CdO films grown by simple chemical spray pyrolysis technique could be used as barrier modifiers in Au/p-Si rectifier device.

Keywords

CdO Spray pyrolysis Schottky Junction rectifier

References

  • Afify HH, Ahmed NM, Tadros MY, Ibrahim FM, 2014. Temperature dependence growth of CdO thin film prepared by spray pyrolysis. Journal of Electrical Systems and Information Technology, 1(2), pp:119–128. doi: 10.1016/j.jesit.2014.07.001
  • Akinn Ü, Yüksel ÖF, Pakma O, Koralay H, Cavdar S, Tugluoglu N, 2019. A Novel Device Behavior Of Al / Coronene / n-GaAs / In Organic Based Schottky Barrier Diode. New Materials, Compounds and Applications, pp:15–22.
  • Bagal VS, Patil GP, Deore AB, Suryawanshi SR, Late DJ, More MA, Chavan PG, 2016. Surface modification of aligned CdO nanosheets and their enhanced field emission properties. RSC Advances, 6(47), pp:41261–41267. doi: 10.1039/C5RA28000A
  • Ferro R, 1999. Some physical properties of F-doped CdO thin films deposited by spray pyrolysis. Thin Solid Films, 347(1–2), pp:295–298. doi: 10.1016/S0040-6090(99)00006-1
  • Grilli ML, Aydogan S, Yilmaz M, 2016. A study on non-stoichiometric p-NiOx/n-Si heterojunction diode fabricated by RF sputtering: Determination of diode parameters. Superlattices and Microstructures, 100, pp:924–933. doi: 10.1016/j.spmi.2016.10.059
  • Gupta RK, Ghosh K, Kahol, PK, 2009a. Fabrication and electrical characterization of Au/p-Si/STO/Au contact. Current Applied Physics, 9(5), pp:933–936. doi: 10.1016/j.cap.2008.09.007
  • Gupta RK, Ghosh K, Kahol PK, 2009b. Fabrication and electrical characterization of Schottky diode based on 2-amino-4, 5-imidazoledicarbonitrile (AIDCN). Physica E: Low-Dimensional Systems and Nanostructures, 41(10), pp:1832–1834. doi: 10.1016/j.physe.2009.07.009
  • Gupta RK, Ghosh K, Patel R, Mishra SR, Kahol PK, 2008. Structural, optical and electrical properties of In doped CdO thin films for optoelectronic applications. Materials Letters, 62(19), pp:3373–3375. doi: 10.1016/j.matlet.2008.03.015
  • Jin S, Yang Y, Medvedeva JE, Ireland JR, Metz AW, Ni J, Kannewurf CR, Freeman AJ, Marks TJ, 2004. Dopant Ion Size and Electronic Structure Effects on Transparent Conducting Oxides. Sc-Doped CdO Thin Films Grown by MOCVD. Journal of the American Chemical Society, 126(42), pp:13787–13793. doi: 10.1021/ja0467925
  • Karataş Ş, Altındal Ş, Türüt A, Çakar, M, 2007. Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements. Physica B: Condensed Matter, 392(1–2), pp:43–50. doi: 10.1016/j.physb.2006.10.039
  • Karataş Ş, Altındal Ş, Türüt A, Özmen A, 2003. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts. Applied Surface Science, 217(1–4), pp:250–260. doi: 10.1016/S0169-4332(03)00564-6
  • Kern W, 1990. The Evolution of Silicon Wafer Cleaning Technology. Journal of The Electrochemical Society, 137(6), pp:1887–1892. doi: 10.1149/1.2086825
  • Khodai ZT, Abdulmunem Ibrahim B, Kaream Hassan M, 2020. Investigation on the structural and optical properties of copper doped NiO nanostructures thin films. Materials Today: Proceedings, 20, pp:560–565. doi: 10.1016/j.matpr.2019.09.189
  • Kocyigit A, Yılmaz M, Aydoğan Ş, İncekara Ü, 2019. The effect of measurements and layer coating homogeneity of AB on the Al/AB/p-Si devices. Journal of Alloys and Compounds, 790, pp:388–396. doi: 10.1016/j.jallcom.2019.03.179
  • Lien CD, So FCT, Nicolet MA, 1984. An improved forward I-V method for nonideal Schottky diodes with high series resistance. IEEE Transactions on Electron Devices, 31(10), pp:1502–1503. doi: 10.1109/T-ED.1984.21739
  • Mahesh D, Kumar MCS, 2020. Synergetic effects of aluminium and indium dopants in the physical properties of ZnO thin films via spray pyrolysis. Superlattices and Microstructures, 142, p:106511. doi: 10.1016/j.spmi.2020.106511
  • Menazea AA, Mostafa AM, Al-Ashkar EA, 2020. Impact of CuO doping on the properties of CdO thin films on the catalytic degradation by using pulsed-Laser deposition technique. Optical Materials, 100, p:109663. doi: 10.1016/j.optmat.2020.109663
  • Murthy LCS, Rao KSRK, 1999. Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method. Bulletin of Materials Science, 22(6), pp:953–957. doi: 10.1007/BF02745685
  • Ocak YS, Kulakci M, Kılıçoğlu T, Turan R, Akkılıç K, 2009. Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode. Synthetic Metals, 159(15–16), pp:1603–1607. doi: 10.1016/j.synthmet.2009.04.024
  • Sağlam M, Biber M, Çakar M, Türüt A, 2004. The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure. Applied Surface Science, 230(1–4), pp:404–410. doi: 10.1016/j.apsusc.2004.03.003
  • Saha B, Thapa R, Chattopadhyay KK, 2008. Wide range tuning of electrical conductivity of RF sputtered CdO thin films through oxygen partial pressure variation. Solar Energy Materials and Solar Cells, 92(9), pp:1077–1080. doi: 10.1016/j.solmat.2008.03.024
  • Sankarasubramanian K, Soundarrajan P, Sethuraman K, Ramamurthi K, 2015. Chemical spray pyrolysis deposition of transparent and conducting Fe doped CdO thin films for ethanol sensor. Materials Science in Semiconductor Processing, 40, pp:879–884. doi: 10.1016/j.mssp.2015.07.090
  • Singh BK, Tripathi S, 2015. Fabrication and characterization of Au/p-ZnO Schottky contacts. Superlattices and Microstructures, 85, pp:697–706. doi: 10.1016/j.spmi.2015.06.038
  • Soylu M, Girtan M, Yakuphanoglu F, 2012. Properties of PEDOT:PEG/ZnO/p-Si heterojunction diode. Materials Science and Engineering: B, 177(11), pp:785–790. doi: 10.1016/j.mseb.2012.03.025
  • Tataroğlu A, Altındal Ş, 2009. The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics. Journal of Alloys and Compounds, 484(1–2), pp:405–409. doi: 10.1016/j.jallcom.2009.04.119
  • Turgut G, Aydogan S, Yilmaz M, Özmen A, Kacus H, 2021. An Investigation of Spray Deposited CdO Films and CdO/p-Si Heterojunction at Different Substrate Temperatures. JOM. doi: 10.1007/s11837-020-04514-9
  • Wang Q, Zhao Z, Li H, Zhuang J, Ma Z, Yang Y, Zhang L, Zhang Y, 2018. One-step RF magnetron sputtering method for preparing Cu(In, Ga)Se2 solar cells. Journal of Materials Science: Materials in Electronics, 29(14), pp:11755–11762. doi: 10.1007/s10854-018-9274-y
  • Yeganeh MA, Rahmatollahpur S, Sadighi-Bonabi R, Mamedov R, 2010. Dependency of barrier height and ideality factor on identically produced small Au/p-Si Schottky barrier diodes. Physica B: Condensed Matter, 405(16), pp:3253–3258. doi: 10.1016/j.physb.2010.04.055
  • Yilmaz M, 2019. A function of external doping: Characteristics of inorganic nanostructure based diode. Ceramics International, 45(1), pp:665–673. doi: 10.1016/j.ceramint.2018.09.226
  • Yıldırım M, 2019. Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters. Journal of Alloys and Compounds, 773, pp:890–904. doi: 10.1016/j.jallcom.2018.09.276
  • Ylä-Mella J, Pongrácz E, 2016. Drivers and Constraints of Critical Materials Recycling: The Case of Indium. Resources, 5(4), p:34. doi: 10.3390/resources5040034
There are 31 citations in total.

Details

Primary Language English
Subjects Metrology, Applied and Industrial Physics
Journal Section Fizik / Physics
Authors

Mehmet Yılmaz 0000-0002-4368-8453

Publication Date June 1, 2021
Submission Date January 11, 2021
Acceptance Date February 3, 2021
Published in Issue Year 2021 Volume: 11 Issue: 2

Cite

APA Yılmaz, M. (2021). Electrical Characterization of CdO Based Au/p-Si Rectifier. Journal of the Institute of Science and Technology, 11(2), 1050-1057. https://doi.org/10.21597/jist.858524
AMA Yılmaz M. Electrical Characterization of CdO Based Au/p-Si Rectifier. J. Inst. Sci. and Tech. June 2021;11(2):1050-1057. doi:10.21597/jist.858524
Chicago Yılmaz, Mehmet. “Electrical Characterization of CdO Based Au/P-Si Rectifier”. Journal of the Institute of Science and Technology 11, no. 2 (June 2021): 1050-57. https://doi.org/10.21597/jist.858524.
EndNote Yılmaz M (June 1, 2021) Electrical Characterization of CdO Based Au/p-Si Rectifier. Journal of the Institute of Science and Technology 11 2 1050–1057.
IEEE M. Yılmaz, “Electrical Characterization of CdO Based Au/p-Si Rectifier”, J. Inst. Sci. and Tech., vol. 11, no. 2, pp. 1050–1057, 2021, doi: 10.21597/jist.858524.
ISNAD Yılmaz, Mehmet. “Electrical Characterization of CdO Based Au/P-Si Rectifier”. Journal of the Institute of Science and Technology 11/2 (June 2021), 1050-1057. https://doi.org/10.21597/jist.858524.
JAMA Yılmaz M. Electrical Characterization of CdO Based Au/p-Si Rectifier. J. Inst. Sci. and Tech. 2021;11:1050–1057.
MLA Yılmaz, Mehmet. “Electrical Characterization of CdO Based Au/P-Si Rectifier”. Journal of the Institute of Science and Technology, vol. 11, no. 2, 2021, pp. 1050-7, doi:10.21597/jist.858524.
Vancouver Yılmaz M. Electrical Characterization of CdO Based Au/p-Si Rectifier. J. Inst. Sci. and Tech. 2021;11(2):1050-7.