Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması

Year 2023, , 1377 - 1385, 15.12.2023

Ahmet Bilgili , Ömer Akpınar , Naki Kaya , Mustafa Öztürk

https://doi.org/10.31466/kfbd.1276114

Abstract

Bu çalışmada, Al0.3Ga0.7N/GaN yüksek elektron mobiliteli transistör (HEMT) yapısı, metal-organik buhar fazlı epitaksi (MOVPE) kullanılarak safir (Al2O3) bir alttaş üzerinde büyütülmüş, elektron taşıma ve manyetik taşıma özellikleri incelenmiştir. Özdirenç 20-350 K sıcaklık aralığında ölçülmüştür. Hall hareketliliği ve Hall taşıyıcı konsantrasyonu, 0-1,5 T manyetik alan aralığında ve aynı sıcaklık aralığında ölçülmüştür. Manyetik taşıma özellikleri, kantitatif hareketlilik spektrum analizi (QMSA) kullanılarak analiz edilmiştir. 2DEG ve 3DEG taşıma mekanizmaları QMSA sonuçları ile birbirinden ayrılmıştır.

Keywords

GaN, HEMT, AlGaN, QMSA, Hall, Mobilite

Project Number

2016 K121220

Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure

Abstract

In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.

Keywords

GaN, HEMT, AlGaN, QMSA, Hall, Mobility

Supporting Institution

Presidency Strategy and Budget Directorate

Project Number

2016 K121220

Thanks

We thank the Presidency Strategy and Budget Directorate for supporting this work.

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