Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure
Abstract
In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.
Keywords
Supporting Institution
Presidency Strategy and Budget Directorate
Project Number
2016 K121220
Thanks
We thank the Presidency Strategy and Budget Directorate for supporting this work.
References
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