Alttaş sıcaklığının expanding thermal plazma yöntemi ile elde edilen a-Si:H filmlerin optik ve elektriksel özellikleri üzerine etkisi

Abstract

Optical properties and dark current activation energy of hydrogenated amorphous silicon (a,Si:H) produced by the expanding thermal plasma chemical vapour deposition (ETPCVD) technique are investigated as a function of substrate temperature in the 150,500°C temperature range. The optical transmission spectra were used to obtain the thickness, refractive index, and optical band gap of the a, Si:H films. It is observed that while the refractive index is increasing with substrate temperature, the optical band gap and deposition rate, as well as the dark conductivity activation energy, are decreasing.

Keywords

• Hydrogenated amorphous silicon, solar cell, optical parameters, optical transmittance.

Effects of substrate temperature on optical and electrical properties of a-Si:H films produced by expanding thermal plasma thecnique

Abstract

Optical properties and dark current activation energy of hydrogenated amorphous silicon (a,Si:H) produced by the expanding thermal plasma chemical vapour deposition (ETPCVD) technique are investigated as a function of substrate temperature in the 150,500°C temperature range. The optical transmission spectra were used to obtain the thickness, refractive index, and optical band gap of the a, Si:H films. It is observed that while the refractive index is increasing with substrate temperature, the optical band gap and deposition rate, as well as the dark conductivity activation energy, are decreasing.

Keywords

• Hydrogenated amorphous silicon, solar cell, optical parameters, optical transmittance.

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