Al/Si3N4/p-Si aygıtının C-V characteristikleri üzerine metal ile yarıiletken kontak arasındaki yalıtkan tabakanın kalınlık etkisi

Year 2017, Volume: 23 Issue: 5, 536 - 542, 20.10.2017

İkram Orak , Adem Koçyiğit

Abstract

Metal-Yalıtkan-Yarıiletken
(MIS) yapılar elektronik ve optoelektronikteki iyi uygulamalarından büyük
ilgiye sahiptirler. Bu yapıların önemi tabaka depolama özelliği, kapasitans
etkisi ve yüksek dileketrik sabitlerine sahip olmalarına dayandırılabilir. Bu yüzden
Si₃N₄ tabakalı iki adet numune plazma destekli kimyasal
buhar biriktirme (PECVD) yöntemiyle birinin kalınlığı 5 nm diğerinin kalınlığı
50 nm olacak şekilde p-tip Si üzerine büyütüldü. Si₃N₄
tabakasının kalınlığı bir elipsometreyle kontrol edildi. Al/Si₃N₄/p
tip Si kontağın üzerine Si₃N₄ tabakasının kalınlık etkisi
10 kHz-1 MHz frekans değerleri için -5 V’tan +5 V voltaj aralığında yapıların
kapasitans-voltaj (C–V) ve iletkenlik-voltaj (G–V) karakteristikleri ile oda
sıcaklığında  araştırıldı. Farklı kalınlığa
sahip kontakların her bir durumda kapasitans değerlerinin artan frekansla
azaldığı ve iletkenlik değerlerinin arttığı tespit edildi. Ara yüzey durumları
(Nss) ve Seri direnç (Rs) etkileri, bariyer
yüksekliği (Φb) ve taşıyıcı yoğunluğu (Na) kapasitans-voltaj (C–V)
ve iletkenlik-voltaj (G–V) karakteristikleri karakterizasyonlardan elde edildi
ve açıklandı. Ayrıca 5 nm ve 50 nm kalınlık değerindeki tabakalar için 500 kHz
frekansta çift yönlü C-V ve G-V karakterizasyonlarından elde edildi ve kıyaslandı.
Sonuç olarak, Si₃N₄ tabakasının kalınlık değişiminin
kontakların özelliklerini etkilediği görüldü ve bu kontakların Memrezistör yapısına
sahiptirler ve gelecekte hafıza aygıtları için kullanılabilir ve
geliştirilebilirler.

Keywords

Al/Si3N4/p- Si, Schottky, Kapasitans özelliği, MIS, Kalınlık etkisi

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

Abstract

Metal-insulator-semiconductor
(MIS) structures have great interest for their good applications in electronic
and optoelectronic. Their importance can be attributed that they have storage
layer property, capacitance effect and high dielectric constant. For this
reason, two samples of Si₃N₄ layers were deposited with
plasma-enhanced chemical vapor deposition (PECVD) technique on p-type Si; first
is about 5 nm thickness and the other is about 50 nm. The thicknesses of Si₃N₄
were adjusted by an ellipsometer. The thickness effect of Si₃N₄
layers on the Al/Si₃N₄/p type Si contact was studied with
the capacitance-voltage (C–V) and conductance–voltage (G-V) characteristics of
the contact at the frequency range from 10 kHz to 1 MHz and applied bias
voltage from −5 V to +5 V at room temperature. In each contact having different
insulator layers, capacitance values decreased and conductance values increased
with increasing frequencies. The interface states (Nss), the
effect of series resistance (Rs),
barrier height (Φb) and
carrier concentration (Na) were
found from the capacitance-voltage (C–V) and conductance–voltage (G-V)
measurements and explained in the details. To determine memristor behavior of
the Al/Si₃N₄/p type Si contact, dual C-V and G-V
measurements were performed at 500 kHz and the room temperature, and the
results were compared for 5 nm and 50 nm thicknesses layers. Consequently,
changing of Si3N4 layer thickness influenced properties of the contacts, and
these two contacts have memristor behavior and, they can be used and improved
as memory devices in the future.

Keywords

Al/Si3N4/p- Si, Schottky, Capacitance behavior, MIS, Thickness effect

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