SILAR yöntemiyle elde edilen Cu2SnS3 ince filmlerin yapısal ve optik özellikleri

Year 2017, , 505 - 510, 01.06.2017

AYKUT Astam

https://doi.org/10.16984/saufenbilder.289305

Cited By: 1

Abstract

 Bakır kalay sülfür (Cu₂SnS₃)
ince filmler, cam altlıklar üzerine sıralı iyonik tabaka adsorpsiyonu ve
reaksiyonu (SILAR) yöntemi kullanılarak, oda sıcaklığında elde edilen filmlerin
350°C’de 1 saat süre ile sülfür atmosferinde tavlanması
neticesinde büyütüldü. Filmlerin yapısal ve optik özellikleri, tavlama öncesi ve
sonrası, X-ışını difraksiyonu (XRD), taramalı elektron mikroskobu (SEM), enerji
ayırımlı X-ışını analizi (EDAX) ve optik soğurma ölçümleri kullanılarak
incelendi. XRD sonuçları, tavlama işleminin filmlerin kristal yapısını amorfdan
polikristale dönüştürdüğünü gösterdi. Elde edilen SEM görüntülerinden
tavlamayla filmlerin yüzey morfolojisinin değiştiği, EDAX sonuçlarından ise filmlerde
tavlama işlemi öncesi ve sonrası bakır fazlalığının olduğu belirlendi. Yapılan
optik soğurma ölçümlerinden filmlerin direk yasak enerji aralığının tavlamayla,
1.27 eV değerinden 1.21 eV değerine azaldığı gözlendi.

Keywords

Cu2SnS3, SILAR, ince film

Structural and optical properties of Cu2SnS3 thin films obtained by SILAR method

Abstract

Cu2SnS3 thin films were obtained by annealing of SILAR deposited films at 350°C for 1 hour in sulphur atmosphere.
The structural and optical properties of the films were investigated using X-ray diffraction (XRD), scanning electron
microscopy (SEM), energy dispersive X-ray analysis (EDAX) and optical absorption measurements, before and after
annealing. The XRD results showed that the annealing process transformed the crystal structure of the films from
amorphous to polycrystalline. SEM images revealed that the surface morphology of films was changed after annealing
while EDAX analysis showed that the films were excess in copper concentration before and after annealing. Optical
absorption measurements confirmed that the direct band gap of films decreased from 1.27 eV to 1.21 eV with
annealing.  

Keywords

Cu2SnS3, SILAR, thin film

References

• C. Wu, Z. Hu, C. Wang, H. Sheng, J. Yang ve Y. Xie, "Hexagonal Cu2SnS3 with metallic character: Another category of conducting sulfides," Applied Physics Letters, cilt 91, pp. 143104, 2007.
• X. Chen, X. Wang, C. An, J. Liu ve Y. Qian, "Preparation and characterization of ternary Cu-Sn-E (E=S, Se) semiconductor nanocrystallties via a solvothermal element reaction route," Journal of Crystal Growth, cilt 256, pp. 368376, 2003.
• S. A. Vanalakar, G. L. Agawane, A. S. Kamble, C. W. Hong, P. S. Patil ve J. H. Kim, " Fabrication of Cu2SnS3 thin film solar cells using pulsed laser deposition technique," Solar Energy Materials  Solar Cells, cilt 138, pp. 18, 2015.
• S. Kahraman, S. Çetinkaya, H. M. Çakmak, H. A. Çetinkara ve H. S. Güder, "Cu2SnS3 absorber thin films prepared via successive ionic layer adsorption and reaction method," International Journal of Materials Research, cilt 104, pp. 10201027, 2013.
• S. Dias, B. Murali ve S. B. Krupanidhi, "Solution processible Cu2SnS3 thin films for cost effective photovoltaics: Characterization," Materials Chemistry and Physics, cilt 167, pp. 309314, 2015.
• A. C. Lokhande, R. B. V. Chalapathy, M. He, E. Jo, M. Gang, S. A. Pawar, C. D. Lokhande ve J. H. Kim, "Development of Cu2SnS3 (CTS) thin film solar cells by physical techniques: A status review," Solar Energy Materials  Solar Cells, cilt 153, pp. 84107, 2016.
• B. Qu, M. Zhang, D. Lei, Y. Zeng, Y. Chen, L. Chen, Q. Li, Y. Wang ve T. Wang, " Facile solvothermal synthesis of mesoporous Cu2SnS3 spheres and their application in lithium-ion batteries," Nanoscale, cilt 3, pp. 36463651, 2011.
• N. Aihara, H. Araki, A. Takeuchi, K. Jimbo ve H. Katagiri, " Fabrication of Cu2SnS3 thin films by sulfurization of evaporated Cu-Sn precursors for solar cells," Physica Status Solidi C, cilt 10, pp. 10861092, 2013.
• Y. Dong, J. He, X. Li, W. Zhou, Y. Chen, L. Sun, P. Yang ve J. Chu," Synthesis and optimized sulfurization time of Cu2SnS3 thin films obtained from stacked metallic precursors for solar cell application," Materials Letters, cilt 160, pp. 468471, 2015.
• P. A. Fernandes, P. M. P. Salome ve A. F. da Cunha, "A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors," Journal of Physics D: Applied Physics, cilt 43, pp. 215403, 2010.
• M. Bouaziz, M. Amlouk ve S. Belgacem, Structural and optical properties of Cu2SnS3 sprayed thin films," Thin Solid Films, cilt 517, pp. 25272530, 2009.
• H. Guan, H. Shen, C. Gao ve X. He, "Structural and optical properties of Cu2SnS3 and Cu3SnS4 thin films by successive ionic layer adsorption and reaction," Journal of Materials Science: Materials in Electronics, cilt 24, pp. 14901494, 2013.
• Y. F. Nicolau, "Solution deposition of thin solid compound films by a successive ionic-layer adsorption and reaction process," Applications of Surface Science, cilt 22/23, pp. 10611074, 1985.
• H. M. Pathan ve C. D. Lokhande, "Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method," Bulletin of Materials Science, cilt 27, pp. 85111, 2004.
• E. Yücel, Y. Yücel ve M. Durak, "Process optimization for window material CdS thin films grown by a successive ionic layer adsorption and reaction method using response surface methodology," Journal of Alloys and Compounds, cilt 664, pp. 530537, 2016.
• R. Aydın, B. Şahin ve F. Bayansal "SILAR yöntemi ile üretilen CuO filmlerin yapısal, morfolojik ve optik özelliklerine ikili katkılamanın (Zn, Li) etkisi," Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, cilt 20, pp. 481487, 2016.
• C. Barret ve T. B. Massalski, Structure of Metals, Pergamon, Oxford, 1980.
• B. Li, Y. Xie, J. Huang ve Y. Qian, "Solvothermal synthesis to Cu2SnSe4 nanocrystals at low temperature," Solid State Ionics, cilt 126, pp. 359362, 1999.
• J. I. Pankove, Optical Processes in Semiconductors, Dover Publications, New York, 1971.