DC Saçtırma Metoduyla Üretilmiş Çift Katmanlı Mo İnce Filmlerin Yarı Kantitatif Doku Analizinin Yapılması ve Kutup Figürlerinin Araştırılması
Abstract
Keywords
Thanks
References
- [1] Hünsche, I., Oertel, C., Tamm, R., Skrotzki, W., Knabl, W. 2004. Microstructure and Texture Development During Recrystallization of Rolled Molybdenum Sheets. Materials Science Forum. 470(1), 495–500.
- [2] Salomé, P. M. P., Malaquias, J., Fernandes, P. A., da Cunha, A. F. 2010. Mo Bilayer for Thin film Photovoltaics Revisited. Journal of Physics D: Applied Physics 43(34), 1-7.
- [3] Ashraf, M. A., Alam I. 2020. Numerical Simulation of CIGS, CISSe and CZTS-Based Solar Cells with In2S3 as Buffer Layer and Au as Back Contact Using SCAPS 1D. Engineering Research Express 2(3), 1-17.
- [4] Orgassa, K., Schock, H. W., Werner, J. H. 2003. Alternative Back Contact Materials for Thin Film Cu(In,Ga)Se2 Solar Cells. Thin Solid Films 431(432), 387–391.
- [5] Ashour, S., Alkuhaimi, S., Moutinho, H., Matson, R., Abou-Elfotouh, F. 1993. Junction Formation and Characteristics of CdS/CulnSe2/Metal Interfaces. Thin Solid Films 226(1), 129-134.
- [6] Ong K. H., Agileswari, R., Maniscalco, B., Arnou, P., Kumar, C. C., Bowers, J. B., Marsadek, M. M. 2018. Review On Substrate And Molybdenum Back Contact in CIGS Thin Film Solar Cell. International Journal of Photoenergy, 2018(1), 1-14.
- [7] Gordillo, G., Grizález, M., Hernandez, L. C. 1998. Structural and Electrical Properties of DC Sputtered Molybdenum Films. Solar Energy Materials and Solar Cells 51(3), 327–337.
- [8] Nakamura, M., Yamaguchi, K., Kimoto, Y., Yasaki, Y., Kato, T., Sugimoto, H. 2019. Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell with Record Efficiency of 23.35%. IEEE Journal of Photovoltaics 9(6), 1863–1867.
Details
Primary Language
Turkish
Subjects
Engineering
Journal Section
Research Article
Publication Date
August 25, 2023
Submission Date
May 16, 2022
Acceptance Date
December 2, 2022
Published in Issue
Year 2023 Volume: 27 Number: 2
Cited By
Ultra-fast detection of ethanol and humidity at room temperature by microboxes formed MoS2 gas sensor prepared with quick double step sulfurization process
Journal of Materials Science: Materials in Electronics
https://doi.org/10.1007/s10854-025-15926-1