Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Volume: 21 Number: 3 August 1, 2017
  • Ersin Kayahan
Süleyman Demirel University Journal of Natural and Applied Sciences Cover
Süleyman Demirel University Journal of Natural and Applied Sciences
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Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Abstract

The observation of effective luminescence (PL) from the porous silicon (PS) at the visible region at room temperature is one of the prevalent topics in recent years. This is why there are many application areas in optoelectronics integration with the existing silicon technology. However, non-uniformity of PL is an important problem and should be solved before using its future applications as light emitting diodes (LEDs). In this study, spatial distribution properties of photoluminescence of porous silicon were investigated by imaging spectroscopy (IS) on macro (95 mm2) and micro (10 µm2) scale. It has been showed that the spatial distribution of PL is not homogeneous. The PS luminescence homogeneity is also affected by the production parameters and the post-anodization environmental conditions. It was showed that luminescence intensity and luminescence homogeneity increased with atmospheric aging.

Keywords

References

  1. [1] Ensafi A-A., Ahmadi N., Rezaei B. 2017. Nickel nanoparticles supported on porous silicon flour application as a non-enzymatic electrochemical glucose sensor. Sensors and Actuators B: Chemical, 239, 807-815.
  2. [2] Riahi R., Derbali L., Ouertani B., Ezzaouia H. 2017. Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon. Applied Surface Science, 404, 34-39.
  3. [3] Kayahan E. 2011. The role of surface oxidation on luminescence degradation of porous silicon. Applied Surface Science, 257, 4311–4316
  4. [4] Esmer K., Kayahan E. 2009. Influence of alkali metallization (Li, Na and K) on photoluminescence properties of porous silicon. Applied Surface Science, 256-5, 1548-1552.
  5. [5] Fujiwara Y., Nishitani H., Nakata H., Ohyama T. 1992. Structured photoluminescence spectrum in laterally anodized porous silicon. Jpn. J. Appl. Phys. 31, L1763.
  6. [6] Ohmukai M., Tsutsumi Y.1997. Characterization of porous silicon by means of photoacoustic spectroscopy. Thin Solid Films, 302-1, 51-53.
  7. [7] Hossain SM., Das J., Chakraborty S., Dutta SK., Saha H. 2002. Electrode design and planar uniformity of anodically etched large area porous silicon. Semicond. Sci. Tech. 17, 55-59.
  8. [8] Nakagava K., Nishida A., Shimada T., Yamaguchi H., Eguchi K. 1992. Fine structure of porous si with visible photoluminescence. Jpn. J. Appl. Phys. 31, L515-L517.

Details

Primary Language

Turkish

Subjects

-

Journal Section

-

Authors

Ersin Kayahan This is me

Publication Date

August 1, 2017

Submission Date

February 27, 2017

Acceptance Date

-

Published in Issue

Year 2017 Volume: 21 Number: 3

DOI

https://doi.org/10.19113/sdufbed.19374

IZ

https://izlik.org/JA94GP64TB

Cite

RIS / Bibtex
APA
Kayahan, E. (2017). Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 21(3), 738-742. https://doi.org/10.19113/sdufbed.19374
AMA
1.Kayahan E. Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. J. Nat. Appl. Sci. 2017;21(3):738-742. doi:10.19113/sdufbed.19374
Chicago
Kayahan, Ersin. 2017. “Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 21 (3): 738-42. https://doi.org/10.19113/sdufbed.19374.
EndNote
Kayahan E (December 1, 2017) Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 21 3 738–742.
IEEE
[1]E. Kayahan, “Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy”, J. Nat. Appl. Sci., vol. 21, no. 3, pp. 738–742, Dec. 2017, doi: 10.19113/sdufbed.19374.
ISNAD
Kayahan, Ersin. “Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 21/3 (December 1, 2017): 738-742. https://doi.org/10.19113/sdufbed.19374.
JAMA
1.Kayahan E. Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. J. Nat. Appl. Sci. 2017;21:738–742.
MLA
Kayahan, Ersin. “Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, vol. 21, no. 3, Dec. 2017, pp. 738-42, doi:10.19113/sdufbed.19374.
Vancouver
1.Ersin Kayahan. Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. J. Nat. Appl. Sci. 2017 Dec. 1;21(3):738-42. doi:10.19113/sdufbed.19374

Cited By

Photoluminescence Investigation of Inhomogeneous Porous P-type Si

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