Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Cilt: 21 Sayı: 3 1 Ağustos 2017
  • Ersin Kayahan
Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi Kapak
Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi
PDF İndir

Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy

Öz

The observation of effective luminescence (PL) from the porous silicon (PS) at the visible region at room temperature is one of the prevalent topics in recent years. This is why there are many application areas in optoelectronics integration with the existing silicon technology. However, non-uniformity of PL is an important problem and should be solved before using its future applications as light emitting diodes (LEDs). In this study, spatial distribution properties of photoluminescence of porous silicon were investigated by imaging spectroscopy (IS) on macro (95 mm2) and micro (10 µm2) scale. It has been showed that the spatial distribution of PL is not homogeneous. The PS luminescence homogeneity is also affected by the production parameters and the post-anodization environmental conditions. It was showed that luminescence intensity and luminescence homogeneity increased with atmospheric aging.

Anahtar Kelimeler

Kaynakça

  1. [1] Ensafi A-A., Ahmadi N., Rezaei B. 2017. Nickel nanoparticles supported on porous silicon flour application as a non-enzymatic electrochemical glucose sensor. Sensors and Actuators B: Chemical, 239, 807-815.
  2. [2] Riahi R., Derbali L., Ouertani B., Ezzaouia H. 2017. Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon. Applied Surface Science, 404, 34-39.
  3. [3] Kayahan E. 2011. The role of surface oxidation on luminescence degradation of porous silicon. Applied Surface Science, 257, 4311–4316
  4. [4] Esmer K., Kayahan E. 2009. Influence of alkali metallization (Li, Na and K) on photoluminescence properties of porous silicon. Applied Surface Science, 256-5, 1548-1552.
  5. [5] Fujiwara Y., Nishitani H., Nakata H., Ohyama T. 1992. Structured photoluminescence spectrum in laterally anodized porous silicon. Jpn. J. Appl. Phys. 31, L1763.
  6. [6] Ohmukai M., Tsutsumi Y.1997. Characterization of porous silicon by means of photoacoustic spectroscopy. Thin Solid Films, 302-1, 51-53.
  7. [7] Hossain SM., Das J., Chakraborty S., Dutta SK., Saha H. 2002. Electrode design and planar uniformity of anodically etched large area porous silicon. Semicond. Sci. Tech. 17, 55-59.
  8. [8] Nakagava K., Nishida A., Shimada T., Yamaguchi H., Eguchi K. 1992. Fine structure of porous si with visible photoluminescence. Jpn. J. Appl. Phys. 31, L515-L517.

Ayrıntılar

Birincil Dil

Türkçe

Konular

-

Bölüm

-

Yazarlar

Ersin Kayahan Bu kişi benim

Yayımlanma Tarihi

1 Ağustos 2017

Gönderilme Tarihi

27 Şubat 2017

Kabul Tarihi

-

Yayımlandığı Sayı

Yıl 2017 Cilt: 21 Sayı: 3

DOI

https://doi.org/10.19113/sdufbed.19374

IZ

https://izlik.org/JA94GP64TB

Kaynak Göster

RIS / Bibtex
APA
Kayahan, E. (2017). Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 21(3), 738-742. https://doi.org/10.19113/sdufbed.19374
AMA
1.Kayahan E. Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. Süleyman Demirel Üniv. Fen Bilim. Enst. Derg. 2017;21(3):738-742. doi:10.19113/sdufbed.19374
Chicago
Kayahan, Ersin. 2017. “Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 21 (3): 738-42. https://doi.org/10.19113/sdufbed.19374.
EndNote
Kayahan E (01 Aralık 2017) Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 21 3 738–742.
IEEE
[1]E. Kayahan, “Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy”, Süleyman Demirel Üniv. Fen Bilim. Enst. Derg., c. 21, sy 3, ss. 738–742, Ara. 2017, doi: 10.19113/sdufbed.19374.
ISNAD
Kayahan, Ersin. “Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 21/3 (01 Aralık 2017): 738-742. https://doi.org/10.19113/sdufbed.19374.
JAMA
1.Kayahan E. Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. Süleyman Demirel Üniv. Fen Bilim. Enst. Derg. 2017;21:738–742.
MLA
Kayahan, Ersin. “Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, c. 21, sy 3, Aralık 2017, ss. 738-42, doi:10.19113/sdufbed.19374.
Vancouver
1.Ersin Kayahan. Investigation of Photoluminescence Homogeneity Distribution of Nano-Porous Silicon by Imaging Spectroscopy. Süleyman Demirel Üniv. Fen Bilim. Enst. Derg. 01 Aralık 2017;21(3):738-42. doi:10.19113/sdufbed.19374

Cited By

Photoluminescence Investigation of Inhomogeneous Porous P-type Si

Advances in Science, Technology and Engineering Systems Journal

https://doi.org/10.25046/aj040325

e-ISSN :1308-6529
Linking ISSN (ISSN-L): 1300-7688

Dergide yayımlanan tüm makalelere ücretiz olarak erişilebilinir ve Creative Commons CC BY-NC Atıf-GayriTicari lisansı ile açık erişime sunulur. Tüm yazarlar ve diğer dergi kullanıcıları bu durumu kabul etmiş sayılırlar. CC BY-NC lisansı hakkında detaylı bilgiye erişmek için tıklayınız.