İndyum Katkısı ile ZnO Tabanlı Fotodiyotun Fototepki Özelliğinin Geliştirilmesi

Abstract

Katkısız ZnO ve İndiyum (In) katkılı ZnO ince filmler sol-gel spin kaplama yöntemi ile p-Si substratı üzerinde büyütülelerek, heteroeklem fotodiyotlar üretilmiştir. Filmlerin kristal yapı analizleri, amorf yapıya sahip olduklarını göstermektedir. Diyotların elektriksel karakterizasyonu geleneksel I-V ve C-G-V tekniği ile gerçekleştirilmiştir. Minimum idealite faktörü ve minimum seri direnç 3.97 ve 7.2 kΩ olarak % 5 In katkılı ZnO/p-Si diyotundan elde edilmiştir. Fotogeçiş ölçümleri, fotodiyotların görünür ışığa hızlı tepki verdiğini ve iyi bir tekrarlanabilirlik anahtarlama döngüsüne sahip olduğunu göstermektedir. Benzer şekilde, 3.15x103'lük en yüksek ışığa duyarlılık ve 2.02 A/W'nin duyarlılığı % 5 Indiyum katkılı ZnO/p-Si fotodiyotundan elde edilmiştir. Bu çalışma, Indiyum katkısının ZnO bazlı fotodiyotların elektriksel ve optoelektrik performanslarını geliştirdiğini göstermektedir.

Keywords

• Sol-jel,Fotodiyot,İndiyum,ZnO

The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

Abstract

The heterojunction photodiodes with undoped ZnO and Indium (In) doping ZnO thin films have been grown on p type silicon wafer by solution based spin coating method. The crystal structure analyzes of the films show that they have amorphous nature. The electrical characterizations of diodes have been performed by classical I-V and C-G-V technique. The minimum ideality factor of 3.97 and minimum series resistance of 7.2 kΩ have been recorded from 5% In doping ZnO/p-Si diode. The phototransient measurements show that photodiodes react fast to visible light and have a good reproducibility switching cycle. Similarly, the highest photosensitivity of 3.15×103 and responsivity of 2.02 A/W have been obtained from 5% In doping ZnO/p-Si photodiode. This study indicates that the doping of In improves the electrical and optoelectrical performance of ZnO based photodiodes.

Keywords

• Sol-gel,Photodiode,Indium,ZnO

Thanks

The experimental and characterization of this study were carried out in Semiconductors Characterization Laboratory of Eskişehir Technical University. The author would like to thank Prof. Dr. Mujdat CAGLAR and Prof. Dr. Yasemin ÇAGLAR for providing facilities of their laboratory.

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