Araştırma Makalesi

The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

Cilt: 24 Sayı: 1 20 Nisan 2020
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The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping

Öz

The heterojunction photodiodes with undoped ZnO and Indium (In) doping ZnO thin films have been grown on p type silicon wafer by solution based spin coating method. The crystal structure analyzes of the films show that they have amorphous nature. The electrical characterizations of diodes have been performed by classical I-V and C-G-V technique. The minimum ideality factor of 3.97 and minimum series resistance of 7.2 kΩ have been recorded from 5% In doping ZnO/p-Si diode. The phototransient measurements show that photodiodes react fast to visible light and have a good reproducibility switching cycle. Similarly, the highest photosensitivity of 3.15×103 and responsivity of 2.02 A/W have been obtained from 5% In doping ZnO/p-Si photodiode. This study indicates that the doping of In improves the electrical and optoelectrical performance of ZnO based photodiodes.

Anahtar Kelimeler

Teşekkür

The experimental and characterization of this study were carried out in Semiconductors Characterization Laboratory of Eskişehir Technical University. The author would like to thank Prof. Dr. Mujdat CAGLAR and Prof. Dr. Yasemin ÇAGLAR for providing facilities of their laboratory.

Kaynakça

  1. [1] Ma, M., Wang, Z., Zhou, J., Liang, C., Zhang, D., Zhu, D. 2019. Effect of CeO2 doping on phase structure and microstructure of alcocufemnni alloy coating, Materials Research, 22(1).
  2. [2] Keskenler, E. F., Turgutb, G. 2016. Synthesis and properties of sol-gel derived transparent ZnO thin films: Effect of indium doping. Journal of Ceramic Processing Research, 17(12), 1254-1259.
  3. [3] Orita, M., Ohta, H., Hirano, M., Hosono, H. 2000. Deep-ultraviolet transparent conductive β-Ga2O3 thin films. Applied Physics Letters, 77(25), 4166-4168.
  4. [4] Richter, R. S., Yaya, A., Dodoo-Arhin, D., Agyei-Tuffour, B., Musembi, R. J., Onwona-Agyeman, B. 2018. Preparation and characterization of indium and gallium doped transparent ZnO films for Solar Cell Applications. Oriental Journal of Chemistry, 34(5), 2325-2331.
  5. [5] Das, A., Saha, R., Karmakar, A., Chattopadhyay, S., Palit, M., Dutta, H. S. 2016. Self-powered rapid binary UV photoswitching with n-ZnO NW/p-Si photodiode. MicroCom, International Conference on Microelectronics, Computing and Communications, 17-20 December, Egypt, 1-5.
  6. [6] Aksoy, S., Caglar, Y. 2019. Synthesis of Mn doped ZnO nanopowders by MW-HTS and its structural, morphological and optical characteristics. Journal of Alloys and Compounds, 781, 929-935.
  7. [7] Yıldırım, M., Kocyigit, A. 2018. Characterization of Al/In: ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers. Journal of Alloys and Compounds, 768, 1064-1075.
  8. [8] Lee, J. H., Jang, B. R., Lee, J. Y., Kim, H. S., Jang, N. W., Kong, B. H., Yun, Y. 2011. Effect of indium mole fraction on the diode characteristics of ZnO: In/p-Si (111) heterojunctions. Japanese Journal of Applied Physics, 50(3R), 031101.

Ayrıntılar

Birincil Dil

İngilizce

Konular

Mühendislik

Bölüm

Araştırma Makalesi

Yayımlanma Tarihi

20 Nisan 2020

Gönderilme Tarihi

18 Aralık 2019

Kabul Tarihi

20 Mart 2020

Yayımlandığı Sayı

Yıl 2020 Cilt: 24 Sayı: 1

Kaynak Göster

APA
Rüzgar, Ş. (2020). The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 24(1), 178-187. https://doi.org/10.19113/sdufenbed.661078
AMA
1.Rüzgar Ş. The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping. Süleyman Demirel Üniv. Fen Bilim. Enst. Derg. 2020;24(1):178-187. doi:10.19113/sdufenbed.661078
Chicago
Rüzgar, Şerif. 2020. “The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 24 (1): 178-87. https://doi.org/10.19113/sdufenbed.661078.
EndNote
Rüzgar Ş (01 Nisan 2020) The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 24 1 178–187.
IEEE
[1]Ş. Rüzgar, “The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping”, Süleyman Demirel Üniv. Fen Bilim. Enst. Derg., c. 24, sy 1, ss. 178–187, Nis. 2020, doi: 10.19113/sdufenbed.661078.
ISNAD
Rüzgar, Şerif. “The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 24/1 (01 Nisan 2020): 178-187. https://doi.org/10.19113/sdufenbed.661078.
JAMA
1.Rüzgar Ş. The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping. Süleyman Demirel Üniv. Fen Bilim. Enst. Derg. 2020;24:178–187.
MLA
Rüzgar, Şerif. “The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping”. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, c. 24, sy 1, Nisan 2020, ss. 178-87, doi:10.19113/sdufenbed.661078.
Vancouver
1.Şerif Rüzgar. The Improvement Photoresponsivity of ZnO Based Photodiode with Indium Doping. Süleyman Demirel Üniv. Fen Bilim. Enst. Derg. 01 Nisan 2020;24(1):178-87. doi:10.19113/sdufenbed.661078

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e-ISSN :1308-6529
Linking ISSN (ISSN-L): 1300-7688

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