The Thin Film Phototransistor Cell with Silver Interfacial Layer

Abstract

In the present study, the silver (Ag) metal particle was used between two insulating layers to fabricated zinc-oxide (ZnO) thin film transistor. The Ag metal was evaporated with thermal systems. The dielectric materials such as Al₂O₃ and HfO₂ were deposited atomic layer deposition (ALD) technique. In order to beter understand the device operation and Ag layer on charge trapping layer, the some electrical characteristics such as I_on/I_off ratio, threshold voltage (Vth) were calculated with some different current-voltage (I-V) measurements. These values are found to be 1.1x10³ and 2.1 V, respectively. The I_DS-V_DS measurements were repeated 20 times to investigate the memory effect of Ag material at the interface layer. This measurement shown that the hysterisis of memory window did not decreased. In addition these measurements, the transistor's response was measured to light by taking I_DS-V_DS measurements in the dark and under light. This device has been found to be photosensitive. These results shown that the ZnO thin film transistor can be used flash memory technology and photovoltaic device applications.

Keywords

• Phototransistor,Thin film transistor,Silver

References

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