CuxZn1-xS İnce Filmlerin Hazırlanması ve Fiziksel Karakterizasyonu: Güneş Pillerinde Tampon Tabaka Olarak Kullanılabilirliklerinin Araştırılması

Öz

Bu çalışmada, CuxZn1-xS ince filmler kimyasal depolama yöntemi kullanılarak ticari cam alt tabanlar üzerine elde edilmiştir. Cu-katkılama oranının CuxZn1-xS ince filmlerin yapısal, morfolojik, elektriksel ve optiksel özellikler üzerindeki etkisi ayrıntılı olarak incelenmiştir. Bu özelliklere bağlı olarak filmlerin güneş pillerinde tampon tabaka olarak kullanılabilirlikleri araştırılmıştır. XRD ölçümleri filmlerin amorf bir yapıya sahip olduğunu göstermiştir. Taramalı elektron mikroskobu (SEM) görüntülerinden katkılama miktarının arttırılması ile daha sıkı bir yapının oluştuğu gözlenmiştir. Film kalınlıkları gravimetrik analiz ile 250-422 nm aralığında hesaplanmıştır. Filmlerin optik özellikleri UV/vis spektrofotometresi ile 300-1100 nm dalga boyu aralığında oda sıcaklığında elde edilen optik geçirgenlik (%T) değerleri kullanılarak belirlenmiştir. CuxZn1-xS ince filmlerinin görünür bölgedeki optik geçirgenlik değerleri %44-92 olarak bulunmuştur. Yapılan hesaplamalar kırılma indisi (n) değerlerinin görünür bölgede 1.36-2.67 arasında olduğunu göstermiştir. Optik bant aralığı değerleri (Eg) 3.19-3.91 eV aralığında bulunmuştur. Hall ölçümleri CuxZn1-xS ince filmlerin p-tipi iletken olduğunu göstermiştir.

Anahtar Kelimeler

• Kimyasal Depolama
• CuxZn1-xS İnce Filmler
• Güneş Pilleri
• Tampon Tabaka

Preparation and Physical Characterization of CuxZn1-xS Thin Films: Investigation of Their Usability as Buffer Layer in Solar Cells

Öz

In this study, CuxZn1-xS thin films were obtained by using chemical bath deposition method on commercial glass substrates. The effect of Cu-doping ratio on the structural, morphological, electrical and optical of CuxZn1-xS thin films were examined in detail. Also of the films were investigated usability as a buffer layer in solar cells depending on these features. XRD measurements showed that the films have an amorphous structure. It was observed that a tighter structure is formed by increasing the doping amount from the scanning electron microscope (SEM) images. The film thicknesses were calculated 250-422 nm by using gravimetric analysis. The optical properties of the films were designated by optical transmittance (T%) measurements obtained wavelength range 300-1100 nm with UV/vis spectrophotometer at room temperature. The optical transmittance values of CuxZn1-xS thin films were found 44-92% in the visible region. The calculations indicated that the refractive index (n) values 1.36-2.67 in the visible region. The optical band gap (Eg) values of the films were determined calculated in the range of 3.19-3.91 eV. Hall measurements showed that CuxZn1-xS thin films are p-type conductivity.

Anahtar Kelimeler

• Chemical Deposition
• CuxZn1-xS Thin Films
• Solar Cells
• Buffer Layer

Kaynakça

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