Termiyonik vakum ark tekniği kullanılarak hazırlanan bor katkılı WO3 ince filmler: fiziksel özellikler

Öz

Improvement in the physical properties of WO3 thin film is of great interest among researchers. In this work, boron as a dopant was selected for improvement in the physical characteristics of the WO3 thin films on glass and Silicon wafer substrates. Here, a plasma-based well-known thermionic vacuum arc (TVA) technique was utilized for preparing the films with different boron percent. Then, the prepared films are characterized by suitable measurement devices. The roughness of the films directly depends on the boron amount and nature of the substrate. The structural measurement proved the formation of WO3 phases on both substrates. An increase in the dopant amount causes a shift in the dominant peak in the XRD patterns. The films' calculated crystalline sizes vary from 14 to 49 nm. According to the optical results, the optical band gap (Eg) of the WO3:B (1%) and WO3:B (3%) films were obtained as 3,23 and 3,25 eV, respectively. The increase in the boron leads to an increase in the packing density of the films. This behavior was not related to substrate properties. Respecting this research results, there is a direct relationship between crystallite size and lower optical loss function.

Anahtar Kelimeler

• Bor katkılı WO3
• Dielektrik sabiti
• Optik bant aralığı
• Fiziksel özellikler
• Pürüzlülük

Boron–doped WO3 thin films prepared using thermionic vacuum arc technique: physical properties

Öz

WO3 ince filmin fiziksel özelliklerinin iyileştirilmesi araştırmacılar arasında büyük ilgi görmektedir. Bu çalışmada, cam ve Silikon alttaşlar üzerine depolanan WO3 ince filmlerinin fiziksel özelliklerinin iyileştirilmesi için katkı maddesi olarak bor seçildi. Burada, farklı bor yüzdesine sahip filmlerin hazırlanmasında iyi bilinen plazma bazlı termiyonik vakum ark (TVA) tekniğinden yararlanılmıştır. Daha sonra, hazırlanan filmler uygun ölçüm cihazlarıyla karakterize edilir. Filmlerin pürüzlülüğü doğrudan bor miktarına ve alttaşların yapısına bağlıdır. Yapısal ölçüm, her iki alttaşta da WO3 fazlarının oluşumunu kanıtladı. Katkı miktarındaki artış, XRD desenlerindeki baskın tepe noktasında bir kaymaya neden olur. Filmlerin hesaplanan kristal boyutları 14 ila 49 nm arasında değişmektedir. Optik sonuçlara göre, WO3:B (%1) ve WO3:B (%3) filmlerinin optik bant aralığı (Eg) sırasıyla 3,23 ve 3,25 eV olarak elde edilmiştir. Borun artması filmlerin paketleme yoğunluğunun artmasına neden olur. Bu davranış alttaş özellikleriyle ilişkili değildir. Bu araştırma sonuçlarına bakıldığında, kristal boyutu ile daha düşük optik kayıp fonksiyonu arasında doğrudan bir ilişki vardır.

Anahtar Kelimeler

• Boron-doped WO3
• Dielectric constant
• Optical band gap
• Physical properties
• Roughness.

Kaynakça

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