IN2O3 FILMS PRODUCED BY SOL-GEL SPIN COATING METHOD FOR PHOTOVOLTAIC APPLICATIONS

Öz

In2O3 semiconductor films have been prepared by solgel spin coating method at room temperature. The determination of the processing parameters such as molar concentration of the precursor, spinning speed of the substrate, volume of the solution, number of coating cycles, spin time and annealing temperature for samples have been studied. The physical properties of these films are characterized by x-ray powder diffraction (XRD), ellipsometer, field emission scanning electron microscope (FESEM), absorption and transmittance spectroscopy measurements. X-ray diffraction patterns of the In2O samples have revealed that the samples are polycrystalline with cubic crystal structure. It was determined that optical band gap of the films has direct band transition by using optical absorption measurements. Optical band gap values of In2O3 films at different annealing temperatures were found to be around 3,49 eV. The transmittance values of the films in the visible region have varied between 65% and 80%

Anahtar Kelimeler

• Indium Oxide, Sol-Gel Spin Coating Method, X-Ray Diffraction, FESEM, Optical Band Gap

FOTOVOLTAİK UYGULAMALAR İÇİN DÖNDÜREREK KAPLAMA YÖNTEMİYLE ELDE EDİLEN IN2O3 FİLMLERİ

Öz

In2O3 yarıiletken filmleri oda sıcaklığında döndürerek kaplama yöntemiyle elde edilmiştir. Bu yöntem ile numunelerin elde edilme aşamalarında çözelti konsantrasyonunun, taban dönüş hızının, çözelti miktarının, kaplama sayısının, kaplama süresinin ve tavlama sıcaklığının belirlenmesi çalışmaları yapılmıştır. Filmlerin fiziksel özellikleri x-ışını toz kırınımı (XRD), elipsometre, alan emisyonlu taramalı elektron mikroskobu (FESEM), absorpsiyon ve geçirgenlik spektroskopisi ölçümleri ile karakterize edilmiştir. Numunelerin kırınım desenleri filmlerin polikristal olduğunu ve kübik yapıda kristallendiğini göstermiştir. Optik absorpsiyon ölçümlerinden filmlerin yasak enerji aralıklarının direk bant geçişli olduğu belirlenmiştir. Farklı tavlama sıcaklıklarında InOdeğerleri 3.49 eV civarında bulunmuştur. Görünür bölgede filmlerin geçirgenliği 65% ile 80% aralığındadır. filmlerinin yasak enerji aralığı

Anahtar Kelimeler

• İndiyum Oksit, Döndürerek Kaplama Yöntemi, X-ışını kırınımı, FESEM, Yasak Enerji Aralığı

Kaynakça

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