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SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ

Yıl 2017, Cilt: 19 Sayı: 56, 432 - 446, 01.05.2017
https://doi.org/10.21205/deufmd.2017195644

Öz

Geçirgen iletken oksitlerden biri olan indiyum oksit (In2O3) yarıiletken filmleri spray pyrolysis yöntemiyle 300, 350 ve 400 °C taban sıcaklıklarında cam tabanlar üzerine elde edilmiştir. X‐ışını kırınım desenleri incelendiğinde, numunelerin cisim merkezli kübik In2O3 kristal yapısına sahip olduğu ve taban sıcaklığı artışının filmlerin yapısal özelliklerini iyileştirdiği belirlenmiştir. Alan emisyon taramalı elektron mikroskobu görüntülerinden, elde edilen filmlerin yüzeye iyi tutunduğu, homojen bir dağılım sergilediği ve taneli bir yapılanmanın olduğu saptanmıştır. Geçirgenlik ölçümlerinden numunelerin direkt bant geçişine sahip olduğu ve bant aralığı değerlerinin 3,38 ‐ 3,67 eV aralığında değiştiği belirlenmiştir. Numunelerin kırılma indisi ve sönüm katsayısı spektrumundan envelope yöntemi yardımıyla incelenmiştir. In2O3filmlerinin dielektrik sabitleri (n, k, ε1 ve ε∞), plazma frekansı ωpve taşıyıcı yoğunluğu Nopt gibi optik parametreleri de belirlenmiştir

Kaynakça

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  • 1016/j.tsf.2004.11.107 Thermal s. 38–51.
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  • Corundum Structure: Solid State Communications, Cilt. 4, s. 629‐630. DOI:
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Structural and Optical Properties of In2O3 Films Produced by SprayPyrolysis Technique

Yıl 2017, Cilt: 19 Sayı: 56, 432 - 446, 01.05.2017
https://doi.org/10.21205/deufmd.2017195644

Öz

Indium oxide (In2O3) semiconducting films, as one of important transparent conducting oxides, have been produced by spray pyrolysis technique on glass substrates at 300, 350 and 400 °C substrate temperatures. X‐ray diffraction studies showed that the samples have body centered cubic In2O3 structure and the increasing of substrate temperature improves the structural properties of the films. From field emission scanning electron microscopy results, the films adhered well to the substrates and show a homogeneous distribution with layers of fine grains. The samples have exhibited direct transition with the band gap values lying in the range between 3.38 – 3.67 eV using transmittance measurements. The refractive index and extinction coefficient as a function of wavelength for the samples were investigated from reflectance spectrum by applying the envelope method in the strongly absorbing regime. The optical parameters of the In2O3

Kaynakça

  • Weiher, R.L., Ley, R.P. 1966. Optical Properties of Indium Oxide: J. Appl. Phys., Cilt. 37, s. 299–302. DOI: 10.1063/s1.1707830
  • Senthil Kumar, V., Vickraman, P. Annealing 2010.
  • Dependent on Structural, Optical and Electrical Properties of Indium Oxide Thin Films Deposited By Electron Beam Evaporation Method: Current Applied Physics, Cilt. 10, s. 880–885.
  • 1016/j.cap.2009.10.014 DOI: [3] Prince, J.J., Ramamurthy,
  • S., Subramanian, B., Sanjeeviraja, C., Jayachandran, M. 2002. Spray Pyrolysis Growth and Material Properties of In2O3 Films: Journal of Crystal Growth, Cilt. 240, s. 142– 151. 0248(01)02161‐3
  • Korotcenkov, G., Brinzari, V., Ivanov, M., Cerneavschi, A., Rodriguez, J., Cirera, A., Cornet, A., Morante, J. 2005. Structural Stability of Indium Oxide Films Deposited by Spray Pyrolysis
  • Annealing: Thin Solid Films, Cilt. 479,
  • 1016/j.tsf.2004.11.107 Thermal s. 38–51.
  • DOI: [5] Girtan, M., Folcher, G. 2003. Structural and Optical Properties of Indium Oxide Thin Films Prepared by an Ultrasonic Spray CVD Process: Surface and Coatings Technology, Cilt. 172, s. 242–250. DOI: 10.1016/s0257‐8972(03)00334‐7
  • Shanmugan, S., Mutharasu, D., Kamarulazizi,
  • Rhombohedral InO Thin Films Preparation From in Metal Film Using Oxygen Plasma: IEEE‐ICSE Proc., s. 711‐715.
  • [7] Shannon, R.D. 1966. New High Phases Pressure
  • Corundum Structure: Solid State Communications, Cilt. 4, s. 629‐630. DOI:
  • 1109/SMElec.2012.6417242
  • Prewitt, C.T., Shannon, R.D., Rogers, D.B., Sleight, A.W. 1969. C Rare Earth Oxide‐Corundum Transition and Crystal Chemistry of Oxides Having the Corundum Structure: Inorg. Chem., Cilt. 8, s. 1985–1993. DOI: 10.1021/ic50079a033
  • Yu, D., Yu, S‐H., Zhang, S., Zuo, J., Wang, Metastable
  • Nanofibers Templated from InOOH Nanofibers
  • Pressure: Advanced Functional Materials, Cilt. 13, s. 497–501. DOI: 10.1002/adfm.200304303 2003. In2O3 under
  • Ambient [10] Pan, C.A., Ma, T.P. 1980. High‐ Quality Transparent Conductive Indium Oxide Films Prepared by Thermal Evaporation: Appl. Phys. Lett., Cilt. 37, s. 163‐165. DOI: 10.1063/1.91809
  • Krishnan, R.R., Sreedharan, R.S., Sudheer, S.K., Sudarsanakumar, C., Ganesan,
  • MahadevanPillai, V.P. 2015. Effect of Tantalum Doping on the Structural and Optical Properties of RF Magnetron Sputtered Indium Oxide Thin Films: Materials Science in Semiconductor Processing, Cilt. 37, s.
  • 1016/j.mssp.2015.02.033
  • Tarsa, E.J., English, J.H., Speck, J.S. 1993. Pulsed Laser Deposition of Oriented In2O3 on (0 0 1), InAs, MgO and Yttria‐Stabilized Zirconia: Appl. Phys. Lett., Cilt. 62, s. 2332‐2334. DOI: 10.1063/1.109408
  • Sheel, D.W., Gaskell, J.M. 2011. Deposition of Fluorine Doped Indium Oxide by Atmospheric Pressure
  • Deposition: Thin Solid Films, Cilt. 520,
  • 1016/j.tsf.2011.04.206
  • Vapour s. 1242–1245.
  • DOI: [14] Baqiah, H., Ibrahim, N.B., Abdi, M.H., Halim, Transport, Microstructure
  • and Optical Properties of Cr‐Doped In2O3 Thin Film Prepared by Sol–Gel Method: Journal of Alloys and Compounds, Cilt. 575, s. 198–206. DOI: 10.1016/j.jallcom.2013.04.089 [15] Prathap, P., Subbaiah, Y.P.V., Devika, M., Ramakrishna, Reddy, K.T. 2006. Optical Properties of In2O3 Films Prepared by Spray Pyrolysis: Materials Chemistry and Physics, Cilt. 100, s. 375–379. DOI: 10.1016/j.matchemphys.2006.01.01 6
  • Chopra, K.L., Major, S., Pandya, D.K. 1983. Transparent Conductors‐A Status Review: Thin Solid Films, Cilt.102, 10.1016/0040‐6090(83)90256‐0
  • Al‐Ani Salwan, K. Methods of Determining the Refractive Index of Thin Solid Films: Iraqi J. of Appl. Phys., Cilt. 4, s. 17‐23.
  • Manifacier, J.C., Gasiot, J., Fillard, J.P. 1967. A Simple Method for the Determination of the Optical Constants n, k and the Thickness of a Weakly Absorbing Thin Film: J. Phys. E, Cilt. 9, s. 1002‐1004. DOI: 10.1088/0022‐3735/9/11/032
  • Swanepoel, R. 1983. Determination of the Thickness and Optical Constants of Amorphous Silicon: J. Phys. E: Sci. Instrum., Cilt. 16, s. 1214‐1222. DOI: 10.1088/0022‐ 3735/16/12/023
  • Kushev, D.B., Zheleva, N.N. 1986. A New Method for the Determination of the Thickness, the Optical Constants and the Relaxation Time of Semiconducting
  • Infrared Phys., Cilt. 26, s. 385‐393. DOI: 0891(86)90063‐1 Absorbing Thin
  • Films: 10.1016/0020‐ [21] Epstein, K.A., Misemer,
  • D.K., Vernstrom, G.D. 1987. Optical Parameters
  • Semiconductors from Transmission and Reflection: Appl. Opt., Cilt. 26, s. 294‐299.
  • 1364/AO.26.000294
  • DOI: [22] Minkov, D.A. 1989. Method for Determining the Optical Constants of a Thin Film on a Transparent Substrate: J. Phys. D Appl. Phys., Cilt. 22, s. 199‐205. DOI: 10.1088/0022‐ 3727/22/1/029
  • Minkov, D.A. 1989. Calculation of the Optical Constants of a Thin Layer upon a Transparent Substrate from the Reflection Spectrum: J. Phys. D Appl. Phys., Cilt. 22, s. 1157‐ 1161.
  • 1016/j.tsf.2004.04.040
  • DOI: [24] Stichauer, L., Gavoille, D.G. 1992. A New Method for the Determination of the Optical Constants of Thin Films: Phys. Stat. Sol. (a), Cilt. 133, s. 547‐560.
  • 1002/pssa.2211330240
  • DOI: [25] Filippov, V.V., Kutavichyus, V.P. 2003. Accuracy of Determining the Optical Parameters of Thin Films by the Method of the Reflectance‐ Spectrum Extrema Envelopes: J. Appl. Spectrosc., Cilt. 70, s. 122‐129. DOI: 10.1023/A:1023288928882
  • Minkov, D.A. 1991. Computation of the Optical Constants of a Thin Dielectric Layer on a Transmitting Substrate from the Reflection Spectrum at Inclined Incidence of Light: J. Opt. Soc. Am. A, Cilt. 8, s. 306‐310.
  • 1364/JOSAA.8.000306
  • DOI: [27] Cullity, B.D., Stock, S.R. 2001. Elements of X‐ray Diffraction, 3rd edition, New Jersey, Prentice‐Hall, 388s.
  • Gan, J., Lu, X., Wu, J., Xie, S., Zhai, T., Yu, M., Zhang, Z., Mao, Y., Wang, S.C.I., Shen, Y., Tong, Y. 2012. Oxygen vacancies
  • photoelectrochemical performance of In2O3 nanocubes: Scientific Reports, Cilt. 3, s. 1021‐1027. DOI: 10.1038/srep01021
  • promoting [29] Zhu, H., Wang, X.L., Yang, F., Yang, X.R. 2008.
  • Template‐Free, Surfactantless Route to Fabricate In(OH)3, Nanoarchitectures
  • Conversion to In2O3: Cryst. Growth Des., Cilt. 8, s. 950–956. DOI: 10.1021/cg700850e
  • Their [30] Kaur, M., Jain, N., Sharma, K., Bhattacharya, S., Roy, M., Tyagi, A.K., Gupta, S.K., Yakhmi, J.V. 2008. Room‐Temperature H2S Gas Sensing at ppb Level by Single Crystal In2O
  • Whiskers: Sens. Actuators B, Cilt. 133,
  • 1016/j.snb.2008.03.003
  • DOI: [31] White, W.B., Keramidas, V.G. 1972. Vibrational Spectra of Oxides with the C‐Type Rare Earth Oxide Structure: Spectrochim. Acta A, Cilt. 28, s. 501‐509. DOI: 10.1016/0584‐ 8539(72)80237‐X
  • Rojas‐Lopez, M., Nieto‐Navarro, J., Rosendo, E., Navarro‐Contreras, H., Vidal, M.A. 2000. Raman Scattering Study of Photoluminescent Spark‐ processed Porous InP: Thin Solid Films,
  • 1016/S0040‐6090(00)01565‐0 1‐6.
  • DOI: [33] Korotcenkov, G., Brinzari, V., Ivanov, M., Cerneavschi, A., Rodriguez, J., Cirera, A., Cornet, A., Morante, J. 2005. Structural Stability of Indium Oxide Films Deposited By Spray Pyrolysis
  • Annealing: Thin Solid Films, Cilt. 479,
  • 1016/j.tsf.2004.11.107 Thermal s. 38‐51.
  • DOI: [34] Dong, H., Yang, H., Yang, W., Yin, W., Chen, D. 2008. Diameter‐Controlled Growth of In2O3 Nanowires on the Surfaces of Indium Grains: Materials Chemistry and Physics, Cilt. 107, s. 122–126.
  • 1016/j.matchemphys.2007.06.05 DOI: [35] Mardare, D., Rusu, G.I. 2002. The Influence of Heat Treatment on the Optical Properties of Titanium Oxide Thin Films: Materials Letters, Cilt.
  • 1016/S0167‐577X(02)00441‐X DOI: 3776‐3782.
  • DOI: [37] Kim, N.J., La, H.Y., Im, H.S., Ryu, K.B., 2010.
  • Properties of Fe‐TiO2 Thin Films Prepared by Sol‐Gel Dip Coating: Thin Solid Films, Cilt. 518, s. 156‐ 160. DOI: 10.1016/j.tsf.2010.03.093 [38] Pankove, J.I. 1975. Optical Processes in Semiconductors, New York: Dover, 448s.
  • Narasimha Rao, K., Kashyap, S. 2006.
  • Characterization of Indium Oxide and Indium Tin Oxide Films by Activated Reactive Evaporation: Surface Review and Letters, Cilt. 13, s.
  • 1142/S0218625X06008128
  • Beena, D., Lethy, K.J., Vinodkumar, R., Mahadevan Pillai, V.P., Ganesan, V., Phase, D.M., Sudheer, S.K. 2009. Effect of Substrate Temperature on Structural, Optical and Electrical Properties of Pulsed Laser Ablated Nanostructured
  • Films: Applied Surface Science, Cilt. 255,
  • 1016/j.apsusc.2009.05.057 DOI: [41] Reshmi Krishnan, R.,
  • Sreeja Sreedharan, R., Sudheer, S.K., Sudarsanakumar, C., Ganesan, V., Srinivasan, P., Mahadevan Pillai, V.P. 2015.
  • Temperature on Structural, Optical and Electrical Properties of Pulsed Laser
  • Indium Oxide Films: Materials Science
  • Processing, Cilt. 7, s. 112–122. DOI: 10.1016/j.mssp.2015.02.033 [42] Medenbach, O., Siritanon.
  • T., Subramanian, M.A., Shannon, R.D., Fischer, R.X., Rossman, G.R. 2013. Refractive
  • Dispersion of In2O3, InBO3 and Gahnite:
  • Bulletin, Cilt. 48, s. 2240–2243. DOI:10.1016/j.materresbull.2013.0 2.057 Optical Materials
  • Research [43] Ma, J‐H., Meng, X‐J., Sun, J‐L., Lin, T., Shi, F‐W., Chu, J‐H. 2005. Optical Properties of SrTiO3 Thin Films Prepared
  • Decomposition: Chin. Phys., Cilt. 14, s. 610‐614. DOI: 10.1088/1009‐ 1963/14/3/033
  • Metalorganic [44] Adachi, S. 1999. Optical Properties of Crystalline and Amorphous Semiconductors, Dordrecht: Kluwer, 261s.
  • Kittel, C. 1986. Introduction to Solid State Physics, 8th edition, New York: Wiley, 675s.
  • Hamberg, I., Granqvist, C. G. 1986. Evaporated Sn‐doped In2O3 films: Basic
  • Applications to Energy‐Efficient Windows: J. Appl. Phys., Cilt. 60, s. R123‐159. DOI: 10.1063/1.337534
Toplam 86 adet kaynakça vardır.

Ayrıntılar

Birincil Dil Türkçe
Diğer ID JA29NR64DS
Bölüm Araştırma Makalesi
Yazarlar

Evren Turan

Esra Zeybekoğlu Bu kişi benim

Yayımlanma Tarihi 1 Mayıs 2017
Yayımlandığı Sayı Yıl 2017 Cilt: 19 Sayı: 56

Kaynak Göster

APA Turan, E., & Zeybekoğlu, E. (2017). SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ. Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen Ve Mühendislik Dergisi, 19(56), 432-446. https://doi.org/10.21205/deufmd.2017195644
AMA Turan E, Zeybekoğlu E. SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ. DEUFMD. Mayıs 2017;19(56):432-446. doi:10.21205/deufmd.2017195644
Chicago Turan, Evren, ve Esra Zeybekoğlu. “SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ”. Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen Ve Mühendislik Dergisi 19, sy. 56 (Mayıs 2017): 432-46. https://doi.org/10.21205/deufmd.2017195644.
EndNote Turan E, Zeybekoğlu E (01 Mayıs 2017) SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ. Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen ve Mühendislik Dergisi 19 56 432–446.
IEEE E. Turan ve E. Zeybekoğlu, “SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ”, DEUFMD, c. 19, sy. 56, ss. 432–446, 2017, doi: 10.21205/deufmd.2017195644.
ISNAD Turan, Evren - Zeybekoğlu, Esra. “SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ”. Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen ve Mühendislik Dergisi 19/56 (Mayıs 2017), 432-446. https://doi.org/10.21205/deufmd.2017195644.
JAMA Turan E, Zeybekoğlu E. SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ. DEUFMD. 2017;19:432–446.
MLA Turan, Evren ve Esra Zeybekoğlu. “SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ”. Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen Ve Mühendislik Dergisi, c. 19, sy. 56, 2017, ss. 432-46, doi:10.21205/deufmd.2017195644.
Vancouver Turan E, Zeybekoğlu E. SPRAY PYROLYSİS YÖNTEMİYLE ÜRETİLEN IN2O3 FİLMLERİNİN YAPISAL VE OPTİK ÖZELLİKLERİ. DEUFMD. 2017;19(56):432-46.

Dokuz Eylül Üniversitesi, Mühendislik Fakültesi Dekanlığı Tınaztepe Yerleşkesi, Adatepe Mah. Doğuş Cad. No: 207-I / 35390 Buca-İZMİR.