Comprehensive Investigation of Electrical and Photodiode Characteristics of Au/MgO/n-Si/Al Schottky Barrier Diode for High-Performance Light Detection Applications
Öz
In this study, the electrical and optoelectronic properties of the Au/MgO/p-Si/Al metal-insulator-semiconductor (MIS) structure were comprehensively investigated under different light intensities at room temperature (300 K). Current-voltage (I-V) characteristics revealed that the structure exhibited a photosensitive diode behavior, and a significant increase in the reverse bias current occurred as the light intensity increased. The dependence of key electrical parameters such as ideality factor (n), saturation current (I0), and barrier height (Φb) on light intensity was analyzed; I0 and n values increased with light, while Φb value decreased. In addition, important photodetector parameters of the device such as photosensitivity, photocurrent, and detection were calculated as a function of light intensity and presented graphically. All these parameters showed a significant increase with increasing light intensity, with the detection value especially reaching the Jones level of 3 x 10⁹ under 100 mW/cm² light. The findings show that the Au/MgO/p-Si/Al MIS structure is a promising candidate for photodetector applications with high sensitivity and efficient light detection ability.
Anahtar Kelimeler
MIS, Photodiode, I-V, Photosensitivity, Detectivity, Magnesium Oxide
Proje Numarası
Hakkari Üniversitesi Bilimsel Araştırma Projeleri Bütçesi No: FM22BAP2
Kaynakça
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