CURRENT-VOLTAGE CHARACTERISTICS OF Ag/TiO2/n-InP SCHOTTKY BARRIER DIODE

Yıl 2015, Sayı: 2015 Özel Sayısı, 39 - 44, 15.01.2016

Ahmet Kürşat Bilgili Metin Özer

https://izlik.org/JA38GP86RW

Öz

Current-voltage (I-V) characteristics  of  Ag/TiO₂/n-InP Schottky barrier diodes
have been investigated in the temperature range 300-400 K . Here TiO₂ film
with 120 Å thickness  has been used as interfacial layer between metal and
semiconductor layers. The zero-bias barrier height (F_b0) and
ideality factor n determined from forward bias I-V characteristics  were found strongly dependent
on temperature. We calculated parameters of the diode, by using Termoionic
Emission Theory (TE), we have seen that the results are in accordiance with the
theory. According to these results ideality factor n decrease and barrier height
(F_b0) increase with an increase in
temperature.

Anahtar Kelimeler

InP , Schottky barrier , barrier height , ideality factor

Ag/TiO2/n-InP SCHOTTKY BARİYER DİYOTUN AKIM-VOLTAJ KARAKTERİSTİKLERİ

https://izlik.org/JA38GP86RW

Öz

Ag/TiO₂/n-InP/Au
Schottky bariyerli diyotların akım-voltaj karakteristikleri 300-400 K sıcaklık
aralığında incelendi. Metal ile yarıiletken arasına 120 Å kalınlığında
TiO₂ film
tabakası oluşturuldu. Diyotun ileri beslem akım-voltaj (I-V) karakteristiklerinden
termiyonik emisyon modeline göre, sıfır beslem bariyer yüksekliği ve idealite
faktörü parametreleri hesaplandı. Parametrelerin sıcaklığa bağlı olarak
değiştiği ve sıcaklık artarken bariyer yüksekliğinin arttığı ve idealite
faktörünün azaldığı görüldü.

Anahtar Kelimeler

n-InP , Schottky bariyeri , bariyer yüksekliği , idealite faktörü

Kaynakça

• [1] H. Çetin, E. Ayyıldız, “Electrical characteristics of Au, Al, Cu/n-InP Schottky contacts formed on chemically cleaned and air exposed n-InP surface”, Physica B, 394, 93-99,( 2007)
• [2] S. Sankar Naik, V. Rajagopal Reddy, Chel-Jong Choi, Jong Seong Bae, ”Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process” J. Mater. Sci., 46, 558-565, (2010)
• [3] H. Çetin, E, Ayyıldız, ”On barrier height inhomogeneities Of Au And Cu/N-Inp Schottky contacts”, Physica B, 405, 559, (2010)
• [4] S. Miyazaki, T.C. Lin, C. Nishida, H.T. Kaibe, T. Okumura, ”Morphological and electrical characterization of Al/Ni/n-lnP contacts with tapered insertion Ni-layer”, Electron Mater, 25,577,( 1996)
• [5] W.C, Huang, Cai Dong-Rong,” International workshop on junction technology”, p 295,( 2006)
• [6] V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy, P. Narasimha Reddy,”Effects of annealing temperature on electrical and structural properties of Mo/n-InP (100) Schottky contacts”, Surf. Interface Anal., 41, 905,( 2009)
• [7] E.H. Rhoderick, R.H. Williams, ”Metal-semiconductor contacts”, 2nd edition Clarendon pres, Oxford, (1988)
• [8] R.H. Williams, G.Y. Robinson, ”Physics and chemistry of III-V compound semiconductor interfaces”, Pleneum press, New York, (1985)
• [9] M. Baskhar Reddy, A. Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy, P. Narasimha Reddy, ”Current-voltage-temperature(I-V-T) characteristics of Pd/Au Schottky contacts on n-InP (111)”, Current Applied Physics. 9, 972-977, (2009)