CURRENT-VOLTAGE CHARACTERISTICS OF Ag/TiO2/n-InP SCHOTTKY BARRIER DIODE

Öz

Current-voltage (I-V) characteristics  of  Ag/TiO₂/n-InP Schottky barrier diodes have been investigated in the temperature range 300-400 K . Here TiO₂ film with 120 Å thickness  has been used as interfacial layer between metal and semiconductor layers. The zero-bias barrier height (F_b0) and ideality factor n determined from forward bias I-V characteristics  were found strongly dependent on temperature. We calculated parameters of the diode, by using Termoionic Emission Theory (TE), we have seen that the results are in accordiance with the theory. According to these results ideality factor n decrease and barrier height (F_b0) increase with an increase in temperature.

Anahtar Kelimeler

• InP,Schottky barrier,barrier height,ideality factor

Ag/TiO2/n-InP SCHOTTKY BARİYER DİYOTUN AKIM-VOLTAJ KARAKTERİSTİKLERİ

Öz

Ag/TiO₂/n-InP/Au Schottky bariyerli diyotların akım-voltaj karakteristikleri 300-400 K sıcaklık aralığında incelendi. Metal ile yarıiletken arasına 120 Å kalınlığında TiO₂ film tabakası oluşturuldu. Diyotun ileri beslem akım-voltaj (I-V) karakteristiklerinden termiyonik emisyon modeline göre, sıfır beslem bariyer yüksekliği ve idealite faktörü parametreleri hesaplandı. Parametrelerin sıcaklığa bağlı olarak değiştiği ve sıcaklık artarken bariyer yüksekliğinin arttığı ve idealite faktörünün azaldığı görüldü.

Anahtar Kelimeler

• n-InP,Schottky bariyeri,bariyer yüksekliği,idealite faktörü

Kaynakça

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