Kimyasal Buhar Biriktirme Yöntemi ile Farklı Kalınlıklarda Grafen Büyütülmesi

Yıl 2023, , 787 - 798, 30.04.2023

Aliye Kahyaoğlu , Özlem Ünlü

https://doi.org/10.29130/dubited.1121793

Öz

Grafen, atom kalınlığında düzlemsel altıgen bal peteği yapısına sahip iki boyutlu bir malzemedir. Nano teknolojik uygulamalarda kullanılabilme potansiyeli ile en çok çalışılan nano malzemelerden biri grafendir. Tek katmanlı grafen sentezlenmesinin veya izole edilmesinin farklı yolları vardır, ancak şu ana kadarki en popüler yöntem kimyasal buhar biriktirme adı verilen bir işlem kullanılmaktır. Kimyasal buhar biriktirme, CVD, yöntemi ile ölçekte nispeten daha yüksek kaliteli grafen üretme potansiyeline sahip bir metottur. CVD işlemi makul bir şekilde basittir, ancak bazı özel ekipman gerekli olmasına rağmen, iyi kalitede grafen oluşturmak için gaz hacimleri, basınç, sıcaklık ve süre parametrelerinin kontrolü büyük önem arz etmektedir. Bu proje çalışmasında Kimyasal Buhar Biriktirme Yöntemiyle stabil, kontrollü ve sürdürülebilir grafen elde edebilmek için farklı sıcaklık, basınç ve kaplama süreleri ile grafen sentezi gerçekleştirilmiştir. SEM, AFM ve Raman Spektroskopi analizleri ile elde edilen grafen tabakaların karakterizasyonu yapılmış ve kararlı, sürdürülebilir ve kontrollü grafen eldesi için optimum parametreler belirlenmiştir. Aynı zamanda grafenin farklı kalınlıklardaki filmlerinin elektriksel özellikleri incelenmiştir. Böylece tüm dünyada şu an ticarileştirilmeye çalışılan grafenin uygun alttaş üzerine büyütülmüş uygun kalınlıkta ince film eldesi, transferi ve elektriksel özelliklerinin incelenmesi yapılmıştır.

Anahtar Kelimeler

Grafen, Kimyasal Buhar Biriktirme, Nanoteknoloji, Malzeme Bilimi

Destekleyen Kurum

Düzce Üniversitesi Bilimsel Araştırma Projeleri Koordinatörlüğü

Proje Numarası

2015.05.02.383

Graphene Growth in Different Thickness by Chemical Vapor Deposition Method

Öz

Graphene is a two-dimensional honeycomb material with an atomic-thick planar structure. Graphene is one of the most studied nanomaterials that can be used in nanotechnology applications. There are various methods for synthesizing or isolating graphene monolayers, but by far the most popular uses a process called chemical vapor deposition. Chemical vapor deposition, or CVD, is a process that has the potential to produce relatively high-quality graphene at scale. The CVD process is relatively straightforward with some specialized equipment. However, controlling gas volume, pressure, temperature, and timing is critical to producing good quality graphene. In this project, the synthesis of graphene was carried out at different temperatures, pressures and coating times to produce stable, controlled and durable graphene by chemical vapor deposition. The characteristics of graphene sheets obtained by SEM, AFM and Raman spectroscopy analyzes were determined, as well as the optimal parameters for a stable, sustainable and controlled production of graphene. In parallel, the electrical properties of graphene films on different thicknesses have been studied. Therefore, obtaining a thin film with suitable thickness, transmission and electrical properties of graphene, which is currently
marketed worldwide, was investigated.

Anahtar Kelimeler

Graphene, Chemical Vapor Deposition, Nanotechnology, Materials science

Proje Numarası

2015.05.02.383

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