Yıl 2019, Cilt , Sayı 15, Sayfalar 77 - 85 2019-03-31

Comparative study on the properties of CuInSe2 and CuGaSe2 thin film
CuInSe2 ve CuGaSe2 İnce Filmlerin Özellikleri Üzerine Karşılaştırmalı Çalışma

İdris Candan [1] , Hasan Hüseyin Güllü [2]

Two edge of Cu(In1-xGax)Se2 (CIGS) thin film semiconductors for x=0 (CuInSe2) and x=1 (CuGaSe2) have been produced onto the soda lime glass substrates at 250 oC by sputtering from Cu, InSe and GaSe targets. The effects of In and Ga ratio and the post-annealing at 350 oC and 400 oC on the properties of CuInSe2 (CIS) and CuGaSe2 (CGS) thin film samples have been investigated. The structural properties of the deposited films have been examined by using X-ray diffraction (XRD) and the compositions of samples were analyzed by performing energy dispersive X-ray diffraction analysis (EDXA) techniques. Raman spectra of thin film samples were studied at room temperature to determine the Raman active modes. The most intensive line (A1 modes) at 178 cm-1 and 185 cm-1 were observed for CIS and CGS thin films annealed at 400 oC, respectively. This is the most active mode detected in the Raman spectra of this type of chalcopyrite structures. For as-grown and annealed CGS thin films at 350 oC , the line 486 cm-1 was observed however intensity of this line decreased with increasing annealing temperature and totally disappeared after annealing at 400 oC. Optic transmission measurements showed that the deposited CIS and CGS thin films have optic band gap values for as grown and  annealed (at 400 oC)  samples changing from 1.28 eV  to 1.45 eV and from 1.68 eV to 1.75 eV respectively. The room temperature electrical conductivities of the samples were measured as 8.6x10-3 and 13.6x10-2 (Ω.cm)-1 for n-type CIS thin film samples; 1.6 and 1.9 (Ω.cm)-1 for p-type CGS thin film samples before and after annealing at 400 oC, respectively.

Cu(In1-xGax)Se2 (CIGS) yarıiletken ince filmlerin iki kenar noktası olan x=0 (CuInSe2) ve x=1 (CuGaSe2) ince filmleri, Cu, InSe ve GaSe hedeflerden saçtırma yöntemi ile 250 oC sıcaklıkta soda lime cam alttaşlar üzerine kaplandı. In ve Ga oranı ve üretim sonrası ısıl işlemin CuInSe2 (CIS) ve CuGaSe2 (CGS) ince filmlerin özellikleri üzerine etkileri araştırıldı. Üretilmiş filmlerin yapısal özelliklerini incelemek için  X-ışını kırınımı (XRD) ve örneklerin bileşenleri enerji dağılımlı X-ışını kırınımı analizi (EDXA) yöntemi kullanılarak analiz edildi. İnce film örneklerinin Raman aktif modlarının tayini için oda sıcaklığında Raman spektroskopi ölçümleri yapıldı. 400 oC sıcaklıkta ısıl işlem uygulanmış CIS ve CGS ince film örneklerinin en aktif modları (A1 modu) en yoğun çizgilerin sırayla 178 cm-1 ve 185 cm-1 olduğu gözlendi. Bu mod kalkopirit yapıların Raman spektroskopisinde gözlemlenen en güçlü moddur. Isıl işlem uygulanmamış ve 350 oC’ta ısıl işlem uygulanmış CGS örneklerinde 486 cm-1 çizgisi gözlenmiş olmasına rağmen bu çizginin yoğunluğu artan ısıl işlem sıcaklığı ile ters orantılı olarak azaldığı ve 400 oC uygulanan ısıl işlem sonrası tamamen yok olduğu gözlenmiştir. Üretilen CIS ve CGS ince filmlerin optik geçirgenlik ölçümleri sonucunda ısıl işlem uygulanmayan filmler ve at 400 oC sıcaklıkta ısıl işlem uygulanan filmler için optik bant aralıklarındaki değişim değerleri CIS için 1.28 eV ile  1.45 eV, CGS için 1.68 eV ile 1.75 eV aralıklarında değiştiği  hesaplandı. Numunelerin oda sıcaklığındaki elektriksel iletkenlikleri ısıl işlem öncesi ve 400 oC ısıl işlem sonrasında n-CIS için sırayla 8.6x10-3 ve 13.6x10-2 (Ω.cm)-1, p-CGS için sırayla 1.6 and 1.9 (Ω.cm)-1 olarak ölçüldü.

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Birincil Dil en
Konular Mühendislik
Bölüm Makaleler

Orcid: 0000-0002-9950-713X
Yazar: İdris Candan (Sorumlu Yazar)
Kurum: Kocaeli Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
Ülke: Turkey

Orcid: 0000-0001-8541-5309
Yazar: Hasan Hüseyin Güllü
Kurum: Atılım Üniversitesi, Elektrik ve Elektronik Mühendisliği Bölümü
Ülke: Turkey


Yayımlanma Tarihi : 31 Mart 2019

Bibtex @araştırma makalesi { ejosat491331, journal = {Avrupa Bilim ve Teknoloji Dergisi}, issn = {}, eissn = {2148-2683}, address = {}, publisher = {Osman SAĞDIÇ}, year = {2019}, volume = {}, pages = {77 - 85}, doi = {10.31590/ejosat.491331}, title = {Comparative study on the properties of CuInSe2 and CuGaSe2 thin film}, key = {cite}, author = {Candan, İdris and Güllü, Hasan Hüseyin} }
APA Candan, İ , Güllü, H . (2019). Comparative study on the properties of CuInSe2 and CuGaSe2 thin film. Avrupa Bilim ve Teknoloji Dergisi , (15) , 77-85 . DOI: 10.31590/ejosat.491331
MLA Candan, İ , Güllü, H . "Comparative study on the properties of CuInSe2 and CuGaSe2 thin film". Avrupa Bilim ve Teknoloji Dergisi (2019 ): 77-85 <https://dergipark.org.tr/tr/pub/ejosat/issue/43603/491331>
Chicago Candan, İ , Güllü, H . "Comparative study on the properties of CuInSe2 and CuGaSe2 thin film". Avrupa Bilim ve Teknoloji Dergisi (2019 ): 77-85
RIS TY - JOUR T1 - Comparative study on the properties of CuInSe2 and CuGaSe2 thin film AU - İdris Candan , Hasan Hüseyin Güllü Y1 - 2019 PY - 2019 N1 - doi: 10.31590/ejosat.491331 DO - 10.31590/ejosat.491331 T2 - Avrupa Bilim ve Teknoloji Dergisi JF - Journal JO - JOR SP - 77 EP - 85 VL - IS - 15 SN - -2148-2683 M3 - doi: 10.31590/ejosat.491331 UR - https://doi.org/10.31590/ejosat.491331 Y2 - 2019 ER -
EndNote %0 Avrupa Bilim ve Teknoloji Dergisi Comparative study on the properties of CuInSe2 and CuGaSe2 thin film %A İdris Candan , Hasan Hüseyin Güllü %T Comparative study on the properties of CuInSe2 and CuGaSe2 thin film %D 2019 %J Avrupa Bilim ve Teknoloji Dergisi %P -2148-2683 %V %N 15 %R doi: 10.31590/ejosat.491331 %U 10.31590/ejosat.491331
ISNAD Candan, İdris , Güllü, Hasan Hüseyin . "Comparative study on the properties of CuInSe2 and CuGaSe2 thin film". Avrupa Bilim ve Teknoloji Dergisi / 15 (Mart 2019): 77-85 . https://doi.org/10.31590/ejosat.491331
AMA Candan İ , Güllü H . Comparative study on the properties of CuInSe2 and CuGaSe2 thin film. Avrupa Bilim ve Teknoloji Dergisi. 2019; (15): 77-85.
Vancouver Candan İ , Güllü H . Comparative study on the properties of CuInSe2 and CuGaSe2 thin film. Avrupa Bilim ve Teknoloji Dergisi. 2019; (15): 85-77.