TVA ile üretilen Cam / GaN / InGaN Filmin Artan Tavlama Sıcaklığının Bazı Fiziksel Özelliklerine Etkileri

Öz

Bu çalışmada, GaN / InGaN yarı iletken filmler, termiyonik vakum ark (TVA) yöntemi kullanılarak cam alttaş üzerine büyütüldü. Üretilen filmlerin bazı fiziksel özelliklerini iyileştirmek için, farklı sıcaklıklarda termal tavlama yapıldı ve tavlama sıcaklığının, filmlerin optik ve yüzey özellikleri üzerindeki etkisi araştırıldı. UV-VIS spektrofotometresi kullanılarak geçirgenlik ve soğurma spektrumları alınmış ve optik enerji bant aralıkları belirlenmiştir. Filmlerin yüzey görüntüleri ve yüzey pürüzlülük değerleri, atomik kuvvet mikroskopisi (AFM) kullanılarak elde edildi. Elde edilen sonuçlara göre, GaN / InGaN filmlerin bazı fiziksel özellikleri termal tavlama ile iyileştirilmiş ve bu filmler çeşitli teknolojik alanlarda kullanım için araştırılmıştır.

Anahtar Kelimeler

• GaN/InGaN,Geçirgenlik,Bant aralığı,Atomik Kuvvet Mikroskobu (AFM),Termiyonik vakum ark (TVA),Tavlama.

The Effects of Increasing Annealing Temperature on Some Physical Properties of a Glass/GaN/InGaN Film produced with TVA

Öz

In this study, GaN/InGaN semiconductor films were deposited on glass substrate using thermionic vacuum arc (TVA) method. In order to improve some physical properties of the produced films, thermal annealing was performed at different temperatures and the effect of annealing temperature on the optical and surface properties of the films was investigated. Transmittance and absorption spectra were taken using a UV-VIS spectrophotometer and optical band gap energies were determined. The surface images and surface roughness values of the films were obtained using atomic force microscopy (AFM). According to the results obtained, some physical properties of GaN/InGaN films were improved by thermal annealing and these films were investigated for use in various technological fields.

Anahtar Kelimeler

• GaN/InGaN,Transmittance,Band gap,Atomic Force Microscope (AFM),Thermionic vacuum arc (TVA),Annealing

Kaynakça

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