Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performed in this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of the devices were performed with forward and reverse biases. According to this measurements, the C-2 –V plots were conducted. With the help of those calculation, the barrier height vs temperature (ΦCV – T), the carrier concentration vs temperature (NA – T) and the depletion width vs temperature (w – T) graphs were plotted. In conclusion, it has been seen that the ΦCV and w decreased, and NA almost remained constant with increasing temperature.
The author would like to express his sincere thanks to Prof. Abdulmecit Türüt and Prof. Hasan Efeoğlu for their many valuable contributions.
Al-p-Si-Al structures were
fabricated and temperature dependent capacitance versus voltage measurements
were performed in this study. The Al contacts were grown by the sputtering
method and then capacitance-voltage characteristics of the devices were
performed with forward and reverse biases. According to this measurements, the
C-2 vs V plots were conducted. With the help of those calculation,
the barrier height vs temperature (ΦCV
vs T), the carrier concentration vs temperature (NA vs T) and
the depletion width vs temperature (w
vs T) graphs were plotted. In
conclusion, it has been seen that the ΦCV
and w decreased, and NA remained constant with
increasing temperature.
Birincil Dil | İngilizce |
---|---|
Bölüm | Makaleler |
Yazarlar | |
Yayımlanma Tarihi | 31 Ağustos 2020 |
Yayımlandığı Sayı | Yıl 2020 Cilt: 8 Sayı: 2 |