Effect of Organic Interface on Microelectronic Parameters of Heterojunction Device

Yıl 2025, Cilt: 37 Sayı: 2, 45 - 53, 30.09.2025

Ali Uğur

Öz

In this study, the Ag/FK/n-Si heterojunction device was created using the Ag/n-Si diode and FK (Phenol Red) organic interface. With the help of current-voltage (I-V) measurements, important microelectronic parameters of reference and the heterojunction devices such as barrier height (Фb), ideality factor (n), series resistance (Rs), and saturation current density (J0) were calculated using thermionic emission (TE) theory. In addition, the frequency values of the produced devices between 500 kHz and 1750 kHz were regularly increased and the built-in potential (Vbi), barrier height (Φb), and donor concentration (Nd) were calculated from the microelectronic parameters obtained from the C-V measurement taken at different frequencies. As a result of the measurements, calculations, and comparisons obtained after the studies, it was reported that the Ag/FK/n-Si heterojunction produced was applicable in microelectronic device technologies.

Anahtar Kelimeler

Phenol red , organic interface , heterojunction , microelectronic device

Organik Arayüzeyin Heteroeklem Aygıtın Mikro Elektronik Parametrelerine Etkisi

Öz

Bu çalışmada, Ag/n-Si referans diyot ve FK (Fenol Kırmızı) organik ara yüzey kullanılarak Ag/FK/n-Si hetero eklem aygıtı oluşturuldu. Akım-gerilim (I-V) ölçümleri yardımıyla referans ve heteroeklem aygıtların engel yüksekliği (Фb), idealite faktörü (n), seri direnç (Rs) ve doyma akım yoğunluğu (J0) benzeri önemli mikroelektronik parametreleri termiyonik emisyon (TE) teorisi kullanılarak hesaplandı. Ayrıca üretilen aygıtların 500 kHz ile 1750 kHz arasındaki frekans değerleri düzenli olarak artırılarak farklı frekanslarda alınan C-V ölçümünden elde edilen mikroelektronik parametrelerden built-in potansiyeli (Vbi), engel yüksekliği (Φb), donör konsantrasyonu (Nd) hesaplandı. Yapılan çalışmalar sonrası elde edilen ölçümler, hesaplamalar ve kıyaslamalar sonucunda üretilmiş olan Ag/FK/n-Si hetero ekleminin mikroelektronik aygıt teknolojilerinde uygulanabilir olduğu rapor edildi.

Anahtar Kelimeler

Fenol kırmızı , organik arayüzey , hetero eklem , mikroelektronik aygıt

Kaynakça

• Dayan O, Gencer Imer A, Tercan M, Dere A, Al-Sehemi AG, Al-Ghamdi AA, Yakuphanoglu F. Dye sensitized solar cell-based optoelectronic device using novel [Ru(L1)(L2)(NCS)2] complex. J Mol Struct. 2021; 1238: 130464-73.
• Gencer Imer A, Korkut A, Farooq WA, Dere A, Atif M, Hanif A, Karabulut A. Interface controlling study of silicon based Schottky diode by organic layer. J Mater Sci Mater Electron. 2019; 30: 19239–46.
• Karabulut A, Dere A, Dayan O, Al-Sehemi AG, Serbetci Z, Al-Ghamdi AA, Yakuphanoglu F. Silicon based photodetector with Ru(II) complexes organic interlayer. Mater Sci Semicond Process. 2019; 91: 422–30.
• Gencer Imer A, Dere A, Kaya E, Al-Sehemi AG, Dayan O, Al-Ghamdi AA, Yakuphanoglu F. The photodetection properties of a ruthenium electro-optic device for organic material-based device industry. Opt Mater (Amst). 2023; 142: 114085-94.
• Altındal Ş, Özdemir AF, Aydoğan Ş, Türüt A. Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature. J Mater Sci Mater Electron. 2022; 33:12210–23.
• Sevgili Ö, Yıldırım M, Azizian-Kalandaragh Y, Altındal Ş. A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/Z–V) characteristics. Appl Phys A Mater Sci Process. 2020; 126: 3817-24.
• Güllü Ö, Türüt A. Electrical analysis of organic dye-based MIS Schottky contacts. Microelectron Eng. 2010; 87: 2482–7.
• Ben Ahmed A, Benhaliliba M, Ocak YS, Ayeshamariam A, Benouis CE. Photovoltaic parameters and computational spectroscopic investigation of third order nonlinear optical of CuPc/Si organic diode. Opt Mater (Amst). 2022; 126: 112071-80.
• Benhaliliba M, Ben Ahmed A, Kaleli M, Meftah SE. Structural, optical, nonlinear optical, HUMO-LUMO properties and electrical characterization of Poly(3-hexylthiophene) (P3HT). Opt Mater (Amst). 2022; 132: 112782-91.
• Orak İ, Türüt A, Toprak M. The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/Azure C/p-Si junctions devices. Synth Met. 2015; 200: 66–73.
• Abdel-Khalek H, Shalaan E, Abd-El Salam M, El-Mahalawy AM. Effect of illumination intensity on the characteristics of Cu(acac)2/n-Si photodiode. Synth Met. 2018; 245: 223–36.
• Salem MS, Wassel AR, Fedawy M, Shaker A, Al-Bagawia AH, Aleid GM, El-Mahalawy AM. Integration of biocompatible Coomassie Brilliant Blue dye on silicon in organic/inorganic heterojunction for photodetection applications. J Phys Chem Solids. 2022; 169: 110890-904.
• Omarbli SA, Gencer Imer A. Modification in the electronic parameters of M/p-Si hybrid device by PSP functional dye interface with different contact metals (M:Ag, Cu, Pd, Sn). Synth Met. 2023; 297: 117396-405.
• Tombak A, Imer AG, Syan RHB, Gülcan M, Gümüş S, Ocak YS. Synthesis, characterization, DFT studies, and photodiode application of azo-azomethine-based ligand and its transition-metal complexes. J Electron Mater. 2018; 47: 7240–50.
• Smith BL, Rhoderick EH. Schottky barriers on p-type silicon. Solid State Electron. 1971; 14: 71–5.
• Knac B, Şebnem Çetin S, Bengi A, Özçelik S. The temperature dependent analysis of Au/TiO2 (rutile)/n-Si MIS SBDs using current-voltage-temperature (I-V-T) characteristics. Mater Sci Semicond Process. 2012; 15: 531–45.
• İkram O, Türüt A, Toprak M. The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/Azure C/p-Si junctions devices. Synth Met. 2015; 200: 66–73.
• Dulkadir S, Tecimer HU, Parlaktürk F, Altındal Ş, Karal. The effect of radiation on the forward and reverse bias current–voltage (I–V) characteristics of Au/(Bi4Ti3O12/SiO2)/n-Si (MFIS) structures. J Mater Sci Mater Electron. 2020; 31: 12514–21.
• Dayan O, Gencer Imer A, Al-Sehemi AG, Özdemir N, Dere A, Şerbetçi Z, Al-Ghamdi AA, Yakuphanoglu F. Photoresponsivity and photodetectivity properties of copper complex-based photodiode. J Mol Struct. 2020; 1200: 127062-71.
• Abdel-Khalek H, Shalaan E, Abd-El Salam M, El-Mahalawy AM. Effect of illumination intensity on the characteristics of Cu(acac)2/n-Si photodiode. Synth Met. 2018; 245: 223–36.
• Benhaliliba M. A growth of A–Z phthalocyanine layers onto Si by thermal evaporation process to achieve organic heterojunction diodes. Optik (Stuttg). 2020; 217: 164832-39.
• Tombak A, Ocak YS, Asubay S, Kilicoglu T, Ozkahraman F. Fabrication and electrical properties of an organic–inorganic device based on Coumarin 30 dye. Mater Sci Semicond Process. 2014; 24: 187–92.
• Gencer Imer A, Tombak A, Korkut A. Electrical and photoelectrical characteristic investigation of a new generation photodiode based on bromothymol blue dye. J Phys Conf Ser. 2016; 707-17.
• Gencer Imer A, Syan RHB, Gülcan M, Ocak YS, Tombak A. The novel pyridine based symmetrical Schiff base ligand and its transition metal complexes: synthesis, spectral definitions and application in dye sensitized solar cells (DSSCs). J Mater Sci Mater Electron. 2018; 29: 898–905.
• Gencer Imer A, Karaduman O, Yakuphanoglu F. Controlling of the photosensing properties of Al/DMY/p-Si heterojunctions by the interface layer thickness. Synth Met. 2016; 221: 114–9.
• Altındal Ş, Barkhordari A, Pirgholi-Givi G, Ulusoy M, Mashayekhi H, Özçelik S, Azizian-Kalandaragh Y. Comparison of the electrical and impedance properties of Au/(ZnOMn: PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation. Phys Scr. 2021; 96(12): 125881-93.
• Imer AG, Gülcan M, Çelebi M, Tombak A, Ocak YS. Effects of the r-GO doping on the structural, optical and electrical properties of CdO nanostructured films by ultrasonic spray pyrolysis. J Mater Sci Mater Electron. 2020; 31: 2111–21.
• Sönmezoğlu S, Akın S. Kapasitans‐Voltaj (C‐V) yöntemiyle Sb katkılı TiO2/n‐Si MIS yapının seri direnç parametresinin hesaplanması. Afyon Kocatepe Univ Fen ve Mühendislik Bilimleri Dergisi. 2011; 11(1): 1–8.
• Özdemir MC, Sevgili Ö, Orak İ, Türüt A. Arayüzey doğal oksit tabakalı Al/p-Si/Al yapıların dielektrik karakteristiklerine ölçüm frekansının etkileri. Iğdır Univ Fen Bil Enst Derg. 2020; 10: 91–100.
• Orak İ, Kocyiğit A, Karataş Ş. The analysis of the electrical and photovoltaic properties of Cr/p-Si structures using current-voltage measurements. Silicon. 2018; 10: 2109–16.