DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ

Öz

Bu çalışmada, GaN HEMT transistörün sıcaklığa bağlı analizi yapılarak Volterra güç serisi üçüncü dereceyekadar açılmış ve küçük işaret transfer fonksiyonları (H1, H2, H3) elde edilmiştir. Birinci çekirdek küçük işarettransfer fonksiyonu (H1) kullanılarak 100K, 300K ve 600K sıcaklık değerlerinde dört-tonlu küçük işaretgirişinden elde edilen intermodülasyon (IMD) frekans bileşenleri, geçit-kaynak (Gate source, Vgs) geriliminebağlı olarak analiz edilmiştir. Çalışmada IMD frekans bileşenleri iki grupta irdelenmiş; birinci grup bileşenler (1-6) ve ikinci grup bileşenler ise (7-17) olarak alınmış ve gruplar arası ve grup içi asimetrik genlik değişimi, kritikfrekans bölgesi, bant genişliği ve IMD haberleşme de değerlendirilmiştir.

Anahtar Kelimeler

• HEMT, Asimetri, Volterra Serisi, Sıcaklık, Distorsiyon, Harmonik.

Kaynakça

1. Fukuta, M., “History of HEMT Transistor”
2. Fujitsu Quantum Devices Limited, 2002.
3. Leong, C.J., Shen, Z. and Tay, L.C., “Small-
4. Signal Modeling of a PHEMT up to 110 GHz
5. Based on The Genetic Algorithm”, Microwave
6. and Optical Technology Letters, Vol.29, No.6,
7. -
8. Tasic, A., Serdijn, W. A. and Long, J.R., “Adaptive

9. Low-Power Circuits for Wireless
10. Communications”, Springer, 2006.
11. Wurtz, L.T., “GaAs FET and HEMT Small-
12. Signal Parameter Extraction From Measured SParameters”,
13. IEEE Transactions on
14. Instrumentation and Measurement, Vol.43,
15. No.4, 1994.
16. Crupi, G., Schreurs, D.M.P., Caddemi, A., “On
17. The Small Signal Modeling of Advanced
18. Microwave FETs: A Comparative Study”, Int.
19. Journal of RF And Micr. Comp.-Aided Eng.,
20. pp. 417–425, May 2008.
21. Crupi, G., Xiao, D., Schreurs, D., Limiti, E.,
22. Caddemi, A., De Raedt, W., Germain, M.,
23. “Accurate Multibias Equivalent Circuit Extraction
24. for GaN HEMTs”, IEEE Trans Microwave
25. Theory Tech., Vol.54, pp. 3616–3622, 2006.
26. Jeon, M.Y., “A Technique to Extract Extrinsic
27. Parameters of HEMTs”, Microwave and Optical
28. Technology Letters, Vol.44, No.6, pp. 489–492,
29. -
30. Kameche, M., Feham, M., Meliani, M.,
31. Benahmet, N., Dalı, S., “Intrinsic Small-Signal
32. Equivalent Circuit of GaAs MESFET’s”, National
33. Centre of Space Techniques, Algeria Telecom
34. Laboratory, University of Tlemcen, Algeria,
35. -
36. Tayrani,R., Gerber, J.E., Daniel, T., Pengelly,
37. R.S., Rhode, U.L., “A New And Reliable Direct
38. Parasitic Extraction Method for MESFETs and
39. HEMTs” European Microwave Conf, pp.451–
40. , Spain, 1993.
41. Chalermwisutkul, D.S., “Large Signal Modeling
42. of GaN HEMTs for UMTS Base Station Power
43. Amplifier Design Taking into Account Memory
44. Effects”, Phd Thesis, 2007.
45. Jarndal, A.H., “Large-Signal Modeling of GaN
46. Device for High Power Amplifier Design” Phd
47. Thesis, 2006.
48. Miras, A., Legros, E., “ Very High-Frequency
49. Small-Signal Equivalent Circuit for Short Gate
50. Length InP HEMT’s”, IEEE Trans. Micr.
51. Theory Tech., Vol. 45, pp. 1018–1026, 1997.
52. Liu, Q.Z., “An Accurate and Simple Large Signal
53. Model of HEMT”, Microwave Symposium
54. Digest, 1989.
55. Jarndal, A. and Kompa, G., “A new Small
56. Modeling Approach to GaN Devices, IEEE
57. Trans Micr. Theory Tech., Vol. 54, pp. 2949–
58. , 2006.
59. Kameche, M., Feham, M., “Simple Techniques
60. for Determining The Small-Signal Equivalent
61. Circuit of MESFET’s” Int. Journal of Infrared
62. and Milimeter Waves, Vol. 27, No. 5, pp. 687–
63. , 2006.
64. Chen, G., Kumar, V., Schwindt, R.S., Adesida, I.,
65. “A Low Gate Bias Model Extraction Technique
66. for AlGaN/GaN HEMTs”, IEEE Trans Micr.
67. Theory Tech., Vol. 54, pp. 2949–2953, 2006.
68. Ahmed, A., Islam, S., Anwar, A.F.M., “A
69. Temperature-Dependent Nonlinear Analysis of
70. GaN/AlGaN HEMTs Using Volterra Series”,
71. IEEE Trans. On Micr. Theory and Tech., Vol.
72. , No. 9, 2001.
73. Ahmed, A., Islam, S., Anwar, A.F.M.,
74. “Frequency and Temperature Dependent of Gain
75. Compression in GaN/AlGaN HEMT Amplifiers ”,
76. Solid-State Electronics, vol.47 pp 339-344, 2003.
77. Fager, C., “Empirical Modeling Of Microwave
78. Devices” Microwave Electronics Lab. Chalmers
79. University of Technology, 1-13, 2007.
80. Ladbrook, P.H., “ MMIC Design GaAs FET
81. and HEMT”, Artech House, Boston 1989.
82. Yıldırım, R., Yavuzcan, H.G., and Gökrem, L.,
83. “Temperature dependent analysis of HEMT's
84. based on gain, power and Rolletti stability”,
85. Technology, 12(3), 201–210, 2009.
86. Maas, S.A., “Nonlinear Microwave and RF
87. Circuits”, Artech House, Second Edition, pp. 26–
88. , 2003.
89. Wambacg, P., Sansen, W., “Distortion Analysis
90. of Analog Integrated Circuits” Kluwer
91. Academic Publishers, 2.Ed., Boston 2001.
92. Srinidhi, E. R., Ma, R., Kompa, G., “Volterra
93. Series-Based Distortion Analysis for Optimization of Out-of-Band Terminations in GaN HEMT
94. Devices” IEEE Elect. Devices Lett., 29(1): 24-
95. , 2008.
96. Pedro, J.C., Carvalho, N.B., “Intermodulation
97. Distortion in Microwave and Wireless
98. Circuits”, Artech House, Boston, 2003.
99. Schetzen, M., “The Volterra and Wiener
100. Theories of Nonlinear Systems”, Malabar, Fla.,
101. R.E. Krieger Publishing Co. reprint edition with
102. additional material, 2006.
103. Bussgang, J.J., and Ehrman, L., “Analysis Of
104. Nonlinear Systems With Multiple Inputs” Proc.
105. IEEE, Vol:62, pp.1088-1119, Aug.1974.
106. Weiner, D.D., and Spina, J.E., “Sinusodial
107. Analysis and Modeling of Weakly Nonlinear
108. Circuits”, Van Nostrand Reinhold Comp. New
109. York, 1980.
110. Çelebi, F.V., Yıldırım, R., “Distortion System
111. Theory of the Two Tone Small signal input Laser
112. Diode” J. Fac. Arch. Gazi. Univ., Vol 20, No 4,
113. pp 373-377, 2005.
114. Yıldırım, R., “Intermodulation Distortion System
115. Theory of The Three-Tone Small Signal Input
116. Laser Diode With Non-Linear Optoelectronic
117. Feedback” J. Fac. Arch. Gazi Univ., Vol 2, pp
118. –430, 2007.
119. Yıldırım, R., “Selection of Frequency
120. Components for Symmetric and Asymmetric
121. Communication Systems” J. Fac. Arch. Gazi
122. Univ., Vol 23, No 2, 329-341, 2008.
123. Schetzen, M., Yildirim, R., Çelebi F.V.,
124. “Intermodulation Distortion of the Single-Mode
125. Laser Diode” Applied Physics B-Lasers and
126. Optics Vol. 93 Iss. 4, pp 837–847, 2008.
127. Gökrem, L., Yüksek Elektron Hareketli
128. Transistör (High Electron Mobility Transistor,
129. HEMT) Distorsiyon Analizi, Doktora Tezi, Gazi
130. Üniversitesi, Fen Bilimleri Enstitüsü, 2009.
131. Yıldırım, R., Yavuzcan, H.G., Çelebi, F.V.,
132. Gökrem, L., “Temperature Dependent Rolletti
133. Stability Analysis of GaN HEMT” Journal of
134. Optoelectronics and Advanced Materials –
135. Rapid Communications, Vol. 3, No. 8, p.781 –
136. , August 2009.
137. Yıldırım, R., Çelebi, F.V., Yavuzcan, H.G.,
138. Gökrem, L., “Asymmetric Condition Computed
139. From The Four Tone Input GaN HEMT”, Int.
140. Conf. on Application of Information and
141. Comm. Techn., AICT 2009, Azerbaycan.